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Method for characterizing test sample

A test sample and characterization technology, applied in the field of test sample characterization, can solve problems such as device performance degradation and metal interconnect structure resistance increase, and achieve the effect of improving performance, achieving accurate characterization, and optimizing process parameters.

Pending Publication Date: 2022-03-22
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, metallic copper (Cu) is easily oxidized to form metal oxides, resulting in increased resistance of the metal interconnect structure and reduced device performance

Method used

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  • Method for characterizing test sample
  • Method for characterizing test sample
  • Method for characterizing test sample

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Embodiment Construction

[0050] The technical solution of the present disclosure will be further elaborated below in conjunction with the drawings and embodiments. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0051] In the following paragraphs, the present disclosure is described more specifically by way of example with reference to the accompanying drawings. The advantages and features of the present disclosure will be more apparent from the following description and claims. It should be noted that all the drawings are in very simplified form and use inaccurate scales, which are only used to facilitate and clearly assist the purpose of...

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Abstract

The embodiment of the invention discloses a characterization method of a test sample. The characterization method comprises the following steps: determining a target area in the test sample; wherein the target area comprises a first material layer and a second material layer, the first material layer comprises a first element, the second material layer comprises the first element, and the first material layer is different from the second material layer; performing first scanning on the target area to obtain a first scanning graph; determining a first energy interval of the first element according to the first scanning graph; performing second scanning on the target area according to the first energy interval to obtain a second scanning graph; wherein the numerical value of the energy resolution of the second scan is smaller than the numerical value of the energy resolution of the first scan; and determining the valence state of the first element in the first material layer and the valence state of the first element in the second material layer according to the second scanning map.

Description

technical field [0001] Embodiments of the present disclosure relate to the field of material testing, and in particular, to a method for characterizing test samples. Background technique [0002] In microelectronic circuits, it is usually necessary to form metal wiring on a semiconductor structure to interconnect isolated components to form a desired circuit. In order to meet the requirements of the interconnection process, a metal interconnection material with a lower resistivity is generally used to achieve an ohmic contact with a lower resistance value with the semiconductor structure. [0003] The traditional metal interconnect material is aluminum. With the development of semiconductor manufacturing technology, metal interconnection structures made of aluminum have been gradually replaced by copper interconnection structures due to limitations such as signal delay. However, metallic copper (Cu) is easily oxidized to form metal oxides, resulting in increased resistance...

Claims

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Application Information

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IPC IPC(8): G01N23/04G01N23/2273
CPCG01N23/04G01N23/2273
Inventor 石泉李国梁魏强民
Owner YANGTZE MEMORY TECH CO LTD
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