II-II-VI alloy quantum dot, as well as preparation method and application thereof

A kind of II-II-VI, II-VI technology

Active Publication Date: 2018-09-18
NANJING TECH CORP LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] The main purpose of the present invention is to provide a kind of II-II-VI alloy quantum dot, its preparation method and application thereof, to solve the problem that the fluorescence half-peak width of CdZnSe alloy quantum dot is wider in the prior art

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  • II-II-VI alloy quantum dot, as well as preparation method and application thereof
  • II-II-VI alloy quantum dot, as well as preparation method and application thereof
  • II-II-VI alloy quantum dot, as well as preparation method and application thereof

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preparation example Construction

[0039] According to the energy level distribution of quantum dots, the core-shell structure formed by CdSe quantum dots and ZnSe quantum dots is a type I structure, that is, the conduction band of CdSe quantum dots is lower than that of ZnSe, while the valence band of CdSe is higher than that of ZnSe. valence band. The valence band and conduction band of the alloy formed by the two should be between the two. To form a fully alloyed quantum dot instead of forming a similar core-shell structure, a relatively complete alloy should be formed from the early stage of nucleation. Although the above-mentioned second method has been able to obtain relatively complete alloyed CdZnSe alloy quantum dots, the size and shape of the quantum dots are not uniform, and the composition of the quantum dots is not uniform. This requires another approach. Based on this, in a typical embodiment of the present application, a method for preparing II-II-VI alloy quantum dots is provided, including: St...

Embodiment 1

[0066] CD x Zn 1-x Synthesis of Se alloy quantum dots: Weigh basic zinc carbonate (0.22g, 0.4mmol), oleic acid (1.4g, 0.5mmol), and 12mL ODE in a 100mL three-necked flask, and exhaust it with inert gas for 10 minutes to increase The temperature was raised to 280° C. to obtain a clear solution (ie, containing the precursor of the second group II element). After cooling the clear solution to 180°C, inject 1 mL of 0.5 mmol / mL Se-ODE suspension into it, and react for 10 minutes to form a system containing II-VI semiconductor nanoclusters. Subsequently, inject 0.5ml 0.2mmol / mL cadmium oleate solution (that is, the precursor containing the first group II elements) into the above system, and react for 10 minutes to obtain x Zn 1- x The first system of Se alloy quantum dots. Inject 1mL of TBP solution into the first system, raise the temperature to 300°C, and continue the reaction for 60min.

[0067] During the reaction process, a certain amount of reaction solution was injected...

Embodiment 2

[0069] CD x Zn 1-x Synthesis of Se alloy quantum dots: Weigh basic zinc carbonate (0.22g, 0.4mmol), oleic acid (1.4g, 0.5mmol), and 12mL ODE in a 100mL three-necked flask, and exhaust it with inert gas for 10 minutes to increase The temperature was raised to 280°C to obtain a clear solution. Cool the clear solution to 150°C, inject 1 mL of 0.5 mmol / mL Se-ODE suspension, and react for 10 minutes to form a system containing II-VI semiconductor nanoclusters. Subsequently, 0.5ml of 0.2mmol / mL cadmium oleate solution was injected into the above system, and after 10 minutes of reaction, a Cd-containing x Zn 1-x The first system of Se alloy quantum dots. Inject 1mL of TBP solution into the first system, raise the temperature to 300°C, and continue the reaction for 60min. In the reaction process, a certain amount of reaction solution is injected into a quartz cuvette containing 1-2mL toluene, and the measurement of the ultraviolet-visible absorption spectrum and the fluorescence ...

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Abstract

The invention provides an II-II-VI alloy quantum dot, as well as a preparation method and application thereof. The preparation method comprises the steps of S1, reacting a precursor containing secondII group elements and a precursor containing first VI group elements to form an II-VI semiconductor nanocluster; S2, mixing the II-VI semiconductor nanocluster and the precursor containing the first II group elements, and obtaining a first system containing the II-II-VI alloy quantum dot through cation exchange and in-situ growth. The II-VI nanocluster formed at the beginning of nucleating is located at a nanocrystalline nucleation and growth intermediate state and is small in size, the precursor containing the first II group elements is added for carrying out cation exchange, first II group element atoms easily enter the innermost of the II-VI nanocluster so as to form an II-II-VI nanocluster similar to an alloy, and during the continuous growth process, the first II group element atoms are gradually outwards diffused to the whole particle so as to obtain the narrow half-width alloy quantum dot.

Description

technical field [0001] The invention relates to the field of quantum dot synthesis, in particular to a II-II-VI alloy quantum dot, its preparation method and its application. Background technique [0002] Among all nanomaterials, solution semiconductor nanocrystals (solution quantum dots) with sizes within the quantum confinement effect range are known for their excellent optical properties, such as high fluorescence quantum yield, absorption bandwidth, narrow emission peak, chemical and optical stability. Well, the emission spectrum related to size and morphology has attracted extensive attention from the scientific and industrial circles. As a class of excellent luminescent materials, quantum dots have broad application prospects in the fields of solid-state lighting and display. Compared with the existing liquid crystal display technology, quantum dots have good solution processing performance, and the operation is simpler, and the color resolution of quantum dot light-e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/88B82Y20/00B82Y40/00H01L33/50
CPCH01L33/502C09K11/883B82Y20/00B82Y40/00C01B19/007C09K11/565B82Y30/00C01G9/08C01G11/006C01P2004/64C01P2006/60C01P2004/84
Inventor 周健海
Owner NANJING TECH CORP LTD
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