Separated gate type memory embedded into logic circuit and manufacturing method of memory group

Abstract

The invention provides a manufacturing method of separated gate type flash memories embedded into logic circuits. Compared with a method of separately manufacturing the separated gate type flash memories, the manufacturing method includes four additional steps of once more polycrystalline deposition, once more silicon oxide deposition, once more etching and once more fluid coverage. The characteristic of good fluidity of fluid materials is utilized, grooves, especially deep grooves can be filled, and areas required to be protected can be prevented from being etched in the etching step. The separated gate type flash memories manufactured by the method are embedded into peripheral circuits of high-voltage transistors and logic transistors so that the separated gate type flash memories, the high-voltage transistors and the logic transistors can be manufactured on one integrated circuit, and the integration of the separated gate type flash memories, the high-voltage transistors and the logic transistors is high in density and quick in running. Further, integrated chips are smaller so that cost of each integrated chip is lowered.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a separate gate type flash memory embedded in a logic circuit and a manufacturing method of the memory group. Background technique [0002] Random access memory, such as DRAM and SRAM, has the problem of data loss after power failure during use. To overcome this problem, various nonvolatile memories have been designed and developed. Recently, flash memory based on the floating gate concept has become the most versatile non-volatile memory due to its small cell size and good performance. The non-volatile memory mainly includes two basic structures: a stack gate structure and a split gate structure. The stacked gate structure memory includes a tunnel oxide layer formed on the substrate, a floating gate polysilicon layer (ploy 1) for storing electrons, an oxide / nitride / oxide (oxide-nitride-oxide, ONO ) stack and control gate polysilicon layer (ploy 2) that controls electro...

AI Technical Summary

Problems solved by technology

[0005] If split-gate flash memory, high-voltage transistors, and logic transistors are all built on discrete integrated chips, the operating speed of the entire memory will be limited by the signal transmission bandwidth between the flash memory and peripheral circuits

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