Bulk single crystal gallium nitride and method of making same

Abstract

A single crystal M*N article, which may be made by a process including the steps of: providing a substrate of material having a crystalline surface which is epitaxially compatible with M*N; depositing a layer of single crystal M*N over the surface of the substrate; and removing the substrate from the layer of single crystal M*N, e.g., with an etching agent which is applied to the substrate to remove same, to yield the layer of single crystal M*N as said single crystal M*N article. The bulk single crystal M*N article is suitable for use as a substrate for the fabrication of microelectronic structures thereon, to produce microelectronic devices comprising bulk single crystal M*N substrates, or precursor structures thereof.

Description

[0001] This is a continuation-in-part of U.S. patent application Ser. No. 08 / 188,469 filed Jan. 27, 1994, issued Oct. 21, 1997 as U.S. Pat. No. 5,679,152 for "Method of Making a Single Crystal Ga*N Article."[0002] 1. Field of the Invention[0003] This invention relates to bulk single crystal binary, ternary or quaternary metal nitrides such as gallium nitride, such metal nitrides being referred to broadly hereafter by the symbol M*N, including single crystal M*N substrate articles useful for formation of microelectronic structures thereon, as well as to an appertaining method of forming M*N in single crystal bulk form.[0004] 2. Description of the Related Art[0005] The III-V nitrides, in consequence of their electronic and optical properties and heterostructure character, are highly advantageous in the fabrication of a wide range of microelectronic structures. In addition to their wide band gaps, the III-V nitrides also have direct band gaps and are able to form alloys which permit fa...

AI Technical Summary

Benefits of technology

[0021] The layer of single crystal M*N may be deposited directly on the surface of the crystalline or non-crystalline substrate, or alternatively it may be deposited on an uppermost surface of one or more intermediate layers which in turn are deposited on the crystalline substrate. The one or more intermediate layers may serve as a buffer layer to enhance the crystallinity or other characteristics of the M*N layer, as a template for the subsequent M*N growth thereon, or the intermediate layer(s) may serve as protective layer(s), or as an etch stop to prevent the etchant for the sacrificial substrate from etching into the M*N material.

[0024] In another aspect, the invention utilizes the outdiffusion of specific species from the substrate into the M*N layer to provide enhanced properties of the final M*N product. An example of this aspect is the growth of M*N on a silicon substrate. In this case, Si can be caused to diffuse out of the silicon substrate and into the M*N. This diffusion will form a thin M*N region which is heavily doped with silicon. Silicon-doped M*N is n-type, and this structure is advantageous in certain device structures, as for example for making ohmic contacts to the back surface of the M*N layer or for forming p-n junctions.

Problems solved by technology

Such alloys have in the past been difficult to grow in single crystal form.

Unfortunately, however, it heretofore has not been possible to produce GaN in single crystal bulk form, and for all M*N materials, growth of high quality bulk single crystals has been fraught with difficulty.

Images