The invention belongs to the technical field of alloys, and particularly relates to an integrated melt high-cleaning purification treatment process for a
semiconductor-grade aluminum
alloy. The preparation process comprises the following steps: S1, pre-treating a pure aluminum
ingot to obtain a pre-treated aluminum
ingot; s2, transferring into a
smelting furnace for first melting to obtain a first melt, spreading a covering agent on the surface of the first melt, and adding other
alloy sources for second melting to obtain a second melt; s3, the second
melting temperature is maintained,
nitrogen serves as carrier gas, a refining agent is sprayed into the second melt for
powder spraying, then degassing is conducted, and finally slagging-off is conducted; and S4, cooling to 700-720 DEG C, pressing the adsorbent wrapped by the
aluminum foil into the melt, stirring, draining the melt, filtering through a multi-layer
ceramic foam
filter system, and
casting into an
ingot. According to the aluminum
alloy melt obtained through the cleaning treatment process,
hydrogen, non-metallic inclusions,
alkali metal and other specific trace impurities can be removed at the same time.