Method for preparing flexible and transparent conductive graphene membrane

A graphene film, transparent and conductive technology, which is applied in the manufacture of cables/conductors, conductive layers on insulating carriers, circuits, etc., can solve problems such as limiting the preparation of graphite films, and achieve a simple and environmentally friendly preparation process. Simple process effect

Inactive Publication Date: 2010-12-01
NANJING UNIV OF POSTS & TELECOMM
View PDF2 Cites 60 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, high-temperature reduction of graphene films requires high-temperature resistance of the substrate, which is generally limited to SiO 2 / Si and quartz substrates, which limit the preparation of graphite films based on arbitrary substrates, especially the preparation of films based on flexible substrates

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing flexible and transparent conductive graphene membrane
  • Method for preparing flexible and transparent conductive graphene membrane
  • Method for preparing flexible and transparent conductive graphene membrane

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0027] The preparation method of the flexible transparent conductive graphene film of the present invention includes the preparation of the high-temperature reduced graphene oxide film and the technology of transferring it to a flexible substrate.

[0028] The film material that prepares graphene oxide film among the present invention is large sheet of graphene oxide, and film substrate is SiO 2 / Si, the methods for preparing graphene oxide films include spin coating and LB self-assembly, etc. The area of ​​the film depends on the size of the substrate, and the thickness of the film can be regulated by film forming technology.

[0029] The reduction method of the prepared graphene oxide film is high-temperature thermal annealing, and the condition is to use a mixed gas of argon and hydrogen as a protective gas at a temperature of 800 ° C to 1100 ° C, and heat treatment for 2 hours to obtain a conductive graphene film.

[0030] Before the prepared reduced graphene oxide film is...

Embodiment 1

[0040] Embodiment 1: the preparation method of flexible transparent conductive graphene film.

[0041] Graphene oxide preparation: 2.5g graphite, 1.9g NaNO 3 , 11.5g KMnO 4 and 85ml concentrated H 2 SO 4 After mixing, stir in an ice bath for 1 hour, then stir at room temperature for 2 days, and finally add 250ml of 5wt% concentrated sulfuric acid and 20ml of 30wt% H 2 o 2 Continue to stir for 2 days, centrifuge, and wash with deionized water, repeating this 8 times to obtain graphene oxide.

[0042] Preparation and reduction of graphene oxide film: First, the prepared graphene oxide is ultrasonically obtained to obtain a dispersed graphene oxide solution, and a very small amount of unexfoliated particles is removed by centrifugation at 3000rpm, and the centrifugation time is 30min. Secondly, the centrifuged upper layer solution was centrifuged again at a speed of 4000 rpm for 30 minutes to obtain a sediment containing a large sheet of graphene oxide, which was dispersed i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
electrical conductivityaaaaaaaaaa
Login to view more

Abstract

The invention relates to a method for preparing a flexible and transparent conductive graphene membrane, belongs to the field of the science and technology of nanometer photoelectric materials and particularly relates to the preparation of a thermal reduction and oxidation graphene membrane at the temperature of 1,000 DEG C and technology for transferring the membrane onto a flexible substrate. The flexible and transparent conductive graphene membrane provided by the invention has the advantages of high electrical conductivity, high transmission of light, large-area preparation, rich raw materials, high material utilization ratio, simple preparation method, environmental protection and the like. The technology overcomes the defects of easy brittleness of the conventional indium tin oxide (ITO) and poor electrical conductivity of the conventional flexible conductive polymer membrane, is hopeful to prepare a novel flexible and transparent conductive membrane, is potentially applied to photoelectric functional apparatuses such as organic electroluminescent displays, organic electrical storages, organic solar cells and the like and is particularly applied to flexible photoelectric apparatuses.

Description

technical field [0001] The invention belongs to the technical field of nano photoelectric materials. It specifically relates to the preparation of a high-temperature thermally reduced graphene oxide film and its transfer to a flexible substrate, which has attractive application value in high-performance transparent conductive films and photoelectric functional devices. technical background [0002] Flexible transparent conductive films are widely used in many fields, such as radio frequency identification electronic tags, flexible flat panel display and lighting sources, electronic paper, electrodes of functional devices such as solar cells. Currently, the most commonly used electrode materials are metal oxides based on traditional inorganic materials, such as ITO, IZO, etc. However, with the increasing scarcity of rare metals, the price is becoming more and more expensive, and their brittleness further limits their large-scale application in the field of optoelectronic fun...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01B5/14H01B13/00
Inventor 黄维解令海刘举庆张华殷宗友赵飞姜亭
Owner NANJING UNIV OF POSTS & TELECOMM
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap