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Texturing and cleaning medium for the surface treatment of wafers and use thereof

A surface treatment and texturing technology, applied in the directions of non-surface-active detergent compositions, inorganic non-surface-active detergent compositions, organic non-surface-active detergent compositions, etc. question

Inactive Publication Date: 2011-01-19
FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG EV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This has a detrimental effect on the electrical properties of mainly oxide-passivated silicon substrates

Method used

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  • Texturing and cleaning medium for the surface treatment of wafers and use thereof
  • Texturing and cleaning medium for the surface treatment of wafers and use thereof
  • Texturing and cleaning medium for the surface treatment of wafers and use thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0094] Cleaning, damage etching and texturing in one step of a batch process

[0095] An embodiment according to the present invention for cleaning, damage etching, and texturing in one etching step relates to a batch method in which a unit includes four modules, each of which is air-locked in space with each other On separate. Depending on the number of wafers to be processed at the same time, each module contains an externally sealed chamber of different lengths. The chamber is temporarily opened for loading and unloading, which takes up to 10 seconds for each module, and the chamber has the smallest gas space, so that the thermal and chemical equilibrium between liquid and gas phase can be quickly performed.

[0096] In each chamber, there are processing tanks in which the rails can be immersed. At the beginning of the cleaning process, the wafers are fixed on the rails and they move from one processing chamber to another on the rails.

[0097] In each module, perform the follow...

Embodiment 2

[0117] Cleaning and texturing of wafers cut by wire saw

[0118] Another embodiment according to the present invention for cutting a wafer with a textured wire saw and cleaning at the same time relates to a batch method in which an etchant is used in the module 2 which contains at most 3.5 relative to the total amount of the solution. Weight% potassium tosylate (potassium salt of p-toluenesulfonic acid), 1 weight% potassium tartrate (potassium salt of tartaric acid), 4 weight% potassium hydroxide, and 2 weight% 2-propanol. The processing time in module 2 is 21-25 minutes, and the solution temperature is about 80-85°C.

Embodiment 3

[0120] Cleaning and texturing of wafers cut by wire saw

[0121] Another embodiment according to the present invention for cleaning and texturing wire saw cutting wafers relates to a batch method in which an etching medium is used in module 2 which contains up to 3.5% by weight relative to the total amount of the solution Of potassium tosylate, 1% by weight of ammonium citrate, 5% by weight of potassium hydroxide, 3.5% by weight of 2-propanol and 0.5% by weight of The processing time in module 2 is 21-25 minutes, and the solution temperature is 82-85°C.

[0122] In module 4, the first tank is filled with 5 wt% HCl solution, and the tank temperature is 35°C. The immersion time is 2 minutes.

[0123] The remaining test parameters are similar to those in the first embodiment.

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Abstract

The invention relates to a fluid medium for the surface treatment of monocrystalline wafers, which contains an alkaline etching agent and at least one organic compound with low volatility. Systems of this type can be used either for cleaning, the removal of defects and the texturing of wafer surfaces in a single etching step or, exclusively, for the texturing of silicon wafers having different surface qualities, such as wafers which are cut by a wire saw and exhibit high surface degradation or chemically polished surfaces having a minimal number of defects.

Description

Technical field [0001] The present invention relates to a liquid reagent for surface treatment of a single crystal wafer. The liquid reagent contains an alkaline etchant and at least one low volatile organic compound. This type of system can be used for cleaning, damage etching, and texturing of the wafer surface in a single etching step, and only for texturing of silicon wafers with different surface qualities, regardless of whether the wafers are highly damaged. The wire saw wafer also has a chemically polished surface with minimal damage density. Background technique [0002] In the existing production method, the wafer cleaning and wafer texturing of the slurry residue after the wire saw are completed in two different process steps. These two processes are operationally implemented by wafer manufacturers and solar cell manufacturers. Slurry wafer cleaning is performed by the wafer manufacturer immediately after the wire saw. It mainly involves removing contaminants applied...

Claims

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Application Information

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IPC IPC(8): C11D7/06C11D7/26C11D7/32C11D11/00
CPCC11D7/06C11D7/26C11D7/32C11D11/0047C11D2111/22C11D11/00
Inventor 库诺·梅耶马克·舒曼丹尼尔·凯瑞特里萨·奥雷拉纳·佩雷斯约亨·任特舒马丁·齐默伊莱亚斯·基尔希加斯纳伊娃·齐默丹尼尔·伯罗阿帕德·米哈伊·罗什塔什
Owner FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG EV
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