117 results about "Germanium oxide" patented technology

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a capping mask layer positioned on the substrate; a first gate insulating layer positioned along the capping mask layer, inwardly positioned in the substrate, and including a U-shaped cross-sectional profile; a first work function layer positioned on the first gate insulating layer; a first conductive layer positioned on the first work function layer; and a first capping layer positioned on the first conductive layer. The first capping layer includes germanium oxide. A top surface of the first capping layer and a top surface of the capping mask layer are substantially coplanar.

The embodiment of the invention provides a hydrochloric acid PH control device in a germanium oxide production process and a control method thereof, and belongs to the field of chemical process automatic control. The device comprises an acid liquor storage tank used for storing raw liquor hydrochloric acid and connected to an acid mixing tank through a raw acid feeding control valve; the acid mixing tank is used for mixing an acid solution with a diluent and is connected to the pH regulation reaction tank through a mixed acid feeding control valve; the alkali liquor storage tank is connected to the pH regulation reaction tank through an alkali liquor adding control valve; the pH regulation reaction tank is used for receiving the mixed acid liquor and the alkali liquor and regulating the pH value of a reaction system, and is provided with a pH sensor for detecting the pH value in real time; and the control unit is used for dynamically adjusting the opening degree of each valve by adopting an improved fuzzy self-adaptive PID control algorithm according to a detection result of the pH sensor so as to control the pH value to be within a target range. According to the scheme, the problems of overshoot and lag caused by traditional fixed parameter PID adjustment are solved, and therefore the stability of the pH value of the solution and the consistency of the technology in the germanium oxide production process are guaranteed.

A surface acoustic wave device is disclosed. The surface acoustic wave device can include a support substrate, a piezoelectric layer over the support substrate, a temperature compensation structure between the support substrate and the piezoelectric layer, and an interdigital transducer electrode in electrical communication with the piezoelectric layer. The temperature compensation structure includes a germanium oxide layer.

The invention provides a preparation method of small-particle-size high-purity germanium dioxide, and relates to the technical field of new material preparation, and the preparation method comprises the following steps: S1, preparation of a hydrolysis solution, S2, spraying hydrolysis of germanium tetrachloride, S3, low-temperature aging, S4, solid-liquid separation and washing, and S5, high-temperature drying. The germanium dioxide production process is simple, low in cost and efficient, and the product is small in particle size and good in uniformity.

The invention discloses a method for preparing superfine high-purity germanium dioxide from germanium tetrachloride. The method comprises the following steps: step 1, preparing a reactor; step 2, preparing hydrolysis mother liquor; step 3, hydrolysis; step 4, suction filtration and washing; step 5, drying; and step 6, screening. According to the method for preparing the superfine high-purity germanium dioxide, the production efficiency of the superfine high-purity germanium dioxide can be effectively improved, and the superfine high-purity germanium dioxide is efficiently prepared by controlling the hydrolysis ratio, the acidity of hydrolysate, the germanium content, the temperature of the whole hydrolysis process, the hydrolysis rate and the stirring power.

The present invention belongs to the technical field of preparation of high-purity rare metal materials, and specifically relates to a method for preparing nano-scale high-purity germanium dioxide. High-purity germanium tetrachloride, polyvinyl alcohol solution and water are prepared, mixed and stirred to form a mixed solution, and then germanium dioxide is extracted through a hydrolysis reaction. The generated high-purity germanium dioxide is then strengthened by ultrasonic waves to prepare nano-scale germanium dioxide, thereby obtaining high-purity germanium dioxide with smaller particle size.

The embodiment of the present application relates to a device and method for preparing high-purity germanium powder by hydrogen reduction of germanium dioxide, belonging to the technical fields of germanium metallurgy and preparation of high-purity germanium materials. The device for preparing high-purity germanium powder by hydrogen reduction of germanium dioxide in the embodiment of the present application includes a furnace body. A furnace tube is penetrated through the furnace body, and both ends of the furnace tube extend outside the furnace body and are fixed by a furnace tube support. The furnace tube support is fixedly arranged on the furnace body. Inside the furnace tube, a graphite crucible assembly and a furnace plug are sequentially arranged from bottom to top, and there is a gap between the graphite crucible assembly and the furnace plug. The present application greatly reduces the usage amount of hydrogen, significantly improves the hydrogen utilization rate, and shortens the production cycle.

The subject of the present disclosure provides the production of N-type or P-type or semi-insulating rutile germanium dioxide templates and thin films in order to obtain sun-blind photo detectors from optical systems in the ultraviolet (UV) wavelength, or to obtain UV light emitting diodes, or to produce semiconductor materials required for UV laser diode production, especially for use in the field of power electronics in the defence industry and / or in missile and aircraft tracking systems. The disclosure describes a system and a method for growing r-GeO2 (rutile germanium dioxide) template and thin films using the chemical vapour deposition (CVD) method.

The invention discloses a negative ion antibacterial far infrared non-woven fabric and a production process thereof, and the negative ion antibacterial far infrared non-woven fabric comprises the following raw materials in parts by weight: 100 parts of polypropylene, 10-15 parts of modified polypropylene master batch, 3-5 parts of far infrared radiation filler and 0.1-0.5 part of antioxidant, the polypropylene non-woven fabric is modified by adding the modified polypropylene master batch and the far infrared radiation filler, the modified polypropylene master batch contains the modified nano composite powder and the pyridine group, the modified nano composite powder is obtained by compounding germanium oxide and tourmaline and then carrying out surface modification, and terminal double bonds and erucyl amide groups are introduced, so that the far infrared radiation non-woven fabric is obtained. And the far infrared radiation filler is doped powder of zirconium oxide doped with silver iodide, so that the non-woven fabric has good antibacterial and anti-pollution capability, negative ion release capability and far infrared ray absorption and radiation capability.

The invention discloses tetragonal system germanium dioxide and a hydrothermal synthesis method thereof. According to the method, hexagonal crystal system germanium dioxide is taken as a raw material, a hydrothermal reaction is carried out in an acidic aqueous solution, and efficient conversion from a hexagonal crystal system to a tetragonal crystal system is realized by controlling the reaction temperature to be 120-240 DEG C, the reaction time to be 24-48 hours and the pH value to be 1-3. According to the preferable scheme, the raw materials are subjected to calcination pretreatment at the temperature of 500-600 DEG C, the yield of the tetragonal crystal phase can be remarkably increased, and the synthesis temperature can be reduced to 120 DEG C. According to the invention, stable synthesis of tetragonal system germanium dioxide is realized for the first time under the mild condition of 240 DEG C and below, and the technical problem that high-temperature transformation at 1000 DEG C or above is needed in the traditional method is solved. The tetragonal crystal system germanium dioxide prepared by the method is of a regular polyhedral structure, has the particle size of 400-500nm, and can be used as a high-efficiency catalyst for polyester synthesis. The process is energy-saving and environment-friendly, the total utilization rate of the raw materials is increased by recycling the waste liquid, and the process has remarkable industrial application value.

The invention discloses a resourceful treatment method for crude lead smelting smoke containing indium, germanium, tin and antimony, and belongs to the technical field of comprehensive utilization of crude lead smelting smoke. Firstly, the crude lead smelting smoke is pulpified with a crude hydrochloride solution, then sulfuric acid is injected for curing, then dilution leaching is conducted, leaching residues are fed into crude lead smelting ingredients, and the crude lead smelting ingredients are obtained; transferring the leachate into a selective extraction separation system to selectively extract and separate tin, germanium and indium to respectively obtain tin oxide concentrate, germanium oxide concentrate and crude indium, selectively reducing and precipitating cadmium in indium extraction raffinate to obtain sponge cadmium, briquetting and casting to produce crude cadmium, concentrating the cadmium-removed raffinate with a membrane, and promoting cold crystallization by ethanol to separate out zinc sulfate crystals, and evaporating the mother liquor to remove ethanol, regenerating a crude hydrochloride solution, and returning to leach for use. The method comprehensively recovers seven metals including lead, antimony, tin, germanium, indium, cadmium and zinc, is high in separation coefficient, simple and smooth in process, low in investment, high in benefit, relatively good in industrial application value, high in metal leaching rate and recovery rate and low in treatment energy consumption, and basically realizes zero emission of three wastes.

The invention belongs to the technical field of target materials, and discloses a multi-element doped indium germanium oxide ceramic target material and a preparation method thereof. The ceramic target material comprises indium oxide, germanium oxide and doped oxide, and the doped oxide is one or two of cerium oxide, hafnium oxide or titanium oxide; the preparation method comprises the following steps: mixing In2O3 powder, GeO2 and doped oxide powder, carrying out ball milling, drying, grinding and sieving on the mixed powder to obtain mixed oxide powder, sequentially carrying out compression molding and cold isostatic pressing on the mixed oxide powder to obtain a target material green body, putting the target material green body in an oxygen atmosphere, and carrying out sintering to obtain the target material. A multi-element doped indium germanium oxide ceramic target material is obtained by using a multi-stage sintering method; by adjusting the doping elements in the target material, the proportion of the doping elements and the staged sintering temperature and time, the density and the conductivity of the target material can be remarkably improved.

This utility model discloses a germanium dioxide drying device, including a housing. An electric heater penetrates the bottom surface of the housing. A material box is installed inside the housing, and a metal handle is installed on one end of the material box. An installation box is installed on the rear end of the housing. A breathable mesh is fixedly inserted through the upper part of the housing. A door is installed on the end face of the housing via hinges, and a heat exchange box is fixedly inserted through the end face of the door. A control panel is installed on one side of the housing. Two sets of installation covers are fixedly inserted through the end face of the installation box. A bidirectional lead screw is installed inside the installation box via bearings, and two sets of lead screw sleeves are fitted onto the side walls of the bidirectional lead screw. Each set of lead screw sleeves has a connecting plate fixedly fitted onto its side wall. Beneficial effects: This utility model uses an installation box, which facilitates the installation of the drying structure, bringing convenience to the installation of the germanium dioxide drying device.

The invention discloses a WS2 negative electrode material and a preparation method thereof, a negative electrode and a supercapacitor, and the preparation method comprises the following steps: S1, carrying out the hydrothermal synthesis reaction of tungsten disulfide and germanium dioxide, and obtaining a doped material; s2, germanium dioxide in the doped material is extracted through a solution etching extraction method, and a porous WS2 material is obtained; and S3, carrying out hydrothermal reaction on the porous WS2 material, a cross-linking agent and zirconium dioxide to obtain the modified WS2 negative electrode material. Through the porous structure, crosslinking and ZrO2 doping, the negative electrode material can maintain high specific surface area and has structural stability and high conductivity at the same time, so that the large-current charge-discharge performance of the supercapacitor is remarkably improved.

The invention belongs to the technical field of lithium ion battery negative electrode materials, and particularly relates to a preparation method for preparing a germanium-carbon nano composite material of a lithium ion battery by a hydrothermal method. The preparation method comprises the following steps: adding germanium dioxide into a sodium hydroxide solution, and violently stirring by using a magnetic stirrer until the germanium dioxide is completely dissolved to obtain a sodium germanate clear solution; dropwise adding concentrated hydrochloric acid into the sodium germanate solution to form a white suspension, and adding a carbon nanotube; putting the mixed solution into a hydrothermal reaction kettle, and carrying out hydrothermal reaction; and repeatedly filtering and washing the material by using absolute ethyl alcohol and ultrapure water, and finally carrying out vacuum drying to obtain the germanium-carbon nano composite material. Germanium dioxide and carbon nanotubes are selected as raw materials, the germanium-carbon composite material with a nano structure is generated through a hydrothermal reaction, no binder or catalyst is used, the preparation process is simple, the cost is low, the obtained material is stable in performance, high in energy density and suitable for long-term storage, and support is provided for commercial application of germanium-based negative electrode materials.

The utility model discloses a vertical tubular stainless steel high-purity germanium dioxide reduction device which is composed of a tubular hearth, a heating furnace, a heat preservation layer, a high-purity hydrogen supply pipe, an air cooling cooler, a water cooling cooler and a gas-liquid separator. The tubular hearth is vertically arranged in the heating furnace, and a heat preservation layer is arranged outside the heating furnace; the high-purity hydrogen supply pipe penetrates through the heating furnace and is connected with the top of the tubular hearth; an air outlet pipe is arranged at the bottom of the heating furnace and is connected with an air-cooled cooler; and the air-cooled cooler is connected with the gas-liquid separator through the water-cooled cooler. The tubular hearth is vertically arranged, so that high-purity hydrogen and high-purity germanium dioxide are more fully contacted, the utilization rate and the reduction efficiency of the high-purity hydrogen are higher, the time required by the technological process is shortened, the power consumption is reduced, a high-purity hydrogen pipeline is preheated in the reaction furnace, and the production efficiency is improved. The insufficient reaction temperature caused by the fact that cold air flow directly enters the materials to take away part of heat is avoided.

The invention discloses an IZO target material as well as a preparation method and application thereof. The IZO thin film comprises the following components in parts by weight: 75-90 parts of indium oxide; 10 to 25 parts of zinc oxide; 1-5 parts of germanium oxide; and 0.5 to 1.5 parts of silicon oxide. By doping germanium oxide and silicon oxide in a specific amount, the sheet resistance of the IZO thin film prepared from the IZO target material can be reduced, and the crystallization property of the IZO thin film at a high temperature can be inhibited. Due to the fact that glass network bodies GeO2 and SiO2 are added to inhibit crystallization of the IZO thin film at the high temperature, meanwhile, + 4 valence is doped into In2O3, the purpose of n-type doping can be achieved, the carrier concentration of IZO is increased, and the resistivity of the thin film is improved.

The present invention discloses a method for secondary recovery of germanium from low-grade germanium materials. Specifically, the low-grade germanium materials are leached by the sub-molten salt method to obtain a germanium-containing alkaline leaching solution and an alkaline leaching residue; whether to adopt an aluminum removal process is determined according to the aluminum content in the germanium-containing alkaline leaching solution. After ensuring that the aluminum content meets the standard, germanium is selectively adsorbed by D403 resin. The alkaline solution after germanium extraction can be concentrated and crystallized and then used for sub-molten salt leaching again; the D403 chelating resin adsorbed with germanium is desorbed with a hydrochloric acid solution, and the desorbed D403 chelating resin is activated and regenerated and then re-adsorbs germanium; the germanium-containing hydrochloric acid solution can be used to produce germanium oxide by adjusting the pH value or be formulated with concentrated hydrochloric acid for distilling germanium concentrate. The present invention realizes the efficient leaching of germanium from low-grade germanium materials. After selective adsorption by chelating resin, desorption and then germanium precipitation are carried out, and the enrichment ratio can reach more than 80. By dissolving germanium and other impurities in low-grade germanium materials by the sub-molten salt method, the iron or calcium content in the alkaline leaching residue after germanium dissolution increases and can be used as a metallurgical flux, building materials or raw material for ironmaking.

The invention provides a preparation method of germanium dioxide. The invention relates to a preparation method of germanium dioxide, which comprises the following steps: preparing a concentrated hydrochloric acid solution of germanium tetrachloride, and enabling the germanium tetrachloride in the mixed solution not to generate hydrolysis reaction; the mixed solution is electrolyzed, chlorine is generated by an anode, hydrogen is generated by a cathode, and the concentration of hydrochloric acid in the mixed solution is reduced; and when the concentration of the hydrochloric acid is reduced to a threshold value for promoting the germanium tetrachloride and the water to generate hydrolysis reaction, continuously reacting to enable the germanium tetrachloride and the water to react to generate germanium dioxide precipitate, and separating out the germanium dioxide precipitate after the reaction is finished. The concentration of the germanium tetrachloride is 0.76 mol / L. According to the method for preparing germanium dioxide by promoting germanium tetrachloride hydrolysis through electrolysis of concentrated hydrochloric acid, the situation that extra alkali is used for adjusting the reaction is avoided, the production cost and environmental pollution are reduced, and meanwhile the product purity and the production efficiency are improved.

This invention belongs to the technical field of lithium-ion battery anode materials, specifically a method for preparing germanium-carbon nanocomposite materials for lithium-ion batteries using a hydrothermal method. The preparation method includes: adding germanium dioxide to a sodium hydroxide solution and stirring vigorously with a magnetic stirrer until the germanium dioxide is completely dissolved to obtain a clear sodium germanate solution; adding concentrated hydrochloric acid dropwise to the sodium germanate solution to form a white suspension, and then adding carbon nanotubes; placing the mixed solution in a hydrothermal reactor for hydrothermal reaction; repeatedly filtering and washing the material with anhydrous ethanol and ultrapure water; and finally vacuum drying to obtain the germanium-carbon nanocomposite material. This invention uses germanium dioxide and carbon nanotubes as raw materials to generate a nanostructured germanium-carbon composite material through a hydrothermal reaction. It does not use any binders or catalysts, has a simple and low-cost preparation process, and produces a material with stable performance, high energy density, and suitable for long-term storage, thus supporting the commercial application of germanium-based anode materials.

The invention discloses a morchella hypha powder prefabrication method and equipment line, belongs to the technical field of morchella hyphae, and solves the problems that morchella is extremely sensitive to continuous cropping, metabolite changes the soil microenvironment, hypha division and nutrient absorption are directly hindered, the hypha growth speed is reduced by 30%-50%, the biomass is reduced, and primordium formation is delayed. Comprising the following steps: S1, carrying out stress-resistant intensified culture on liquid strains; chitosan in a specific proportion in a liquid strain neutralizes dopamine quinone, antioxidant enzyme is induced to be improved, fat-soluble toxin is embedded in beta-cyclodextrin in a solid culture medium, dendrobium nobile residues adsorb water-soluble toxin, sodium selenite enhances oxidation resistance, germanium dioxide promotes hypha branching, an overburden filtrate degrades dopamine quinone, ash hydrolyzes related toxin, and the yield is increased. Pseudomonas compensates for beneficial metabolites and accelerates metabolism through temperature difference stimulation, so that hypha growth is accelerated, differential metabolites are reduced, biomass is increased, and the three-crop fruiting rate is stable.

The present disclosure provides a capacitor including a first electrode, a second electrode disposed spaced apart from the first electrode, a dielectric layer disposed between the first electrode and the second electrode and including strontium titanium oxide, and a buffer layer disposed between the first electrode and the dielectric layer, wherein the buffer layer may include germanium oxide and a germanium material portion, and the germanium material portion may be composed of germanium uncombined with oxygen.

This invention discloses a process for recovering germanium from germanium-silicon alloy waste, belonging to the field of germanium recovery technology. The process includes the following steps: S1. Oxidizing and roasting the germanium-silicon alloy waste to obtain roasted clinker; S2. Sulfidating and fixing the roasted clinker and pyrite to obtain activated clinker; S3. Leaching the activated clinker with sulfuric acid, followed by solid-liquid separation, and collecting the germanium-containing leachate; S4. Performing multi-stage countercurrent extraction on the germanium-containing leachate using an amine extractant to obtain a loaded organic phase; then back-extracting the loaded organic phase with an alkaline back-extraction solution to obtain a germanate solution; S5. Hydrolyzing and precipitating the germanate solution to obtain pure germanium dioxide. The roasting process of this invention fixes impurities and activates elemental germanium into soluble germanium dioxide. The purification stage efficiently separates germanium from other impurity ions, and the final hydrolysis precipitation controls product consistency. This invention's recovery process has high recovery efficiency and purity, is more environmentally friendly, and is expected to achieve large-scale production.

The present application relates to a kind of Ge-C composite mesophase carbon microspheres and its preparation method and application, biomass tar pitch and nanoscale germanium dioxide are added to raw oil, and Ge-C preliminary composite mesophase carbon microspheres are obtained by direct thermal polycondensation reaction;Linoleic acid is sprayed as sacrificial layer to its surface, and after pre-oxidation, nanometer Ge is attached to the surface of mesophase carbon microspheres, and a layer of amorphous carbon is attached to the outermost layer of surface, forming the mesophase carbon microspheres of the structure of core Ge / C composite-irregular carbon skeleton / Ge composite-inner surface-amorphous carbon layer structure on the surface.The present application uses cheap and easily available heavy oil as raw material, uses direct thermal polycondensation method and series modification, forms complete Ge / C composite mesophase carbon microspheres, has good conductivity, higher reversible specific capacity and rate performance, and can be stable after 200 cycles after being prepared into battery, the reversible capacity is as high as 1275 mAh / g after 200 cycles at 0.1C current density, and the reversible capacity is as high as 1162 mAh / g after 200 cycles at 1C current density.

Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the silicon-containing precursor in the processing region and forming a first layer of material on the substrate. The first layer of material may include silicon oxide. The methods may include providing a germanium-containing precursor to the processing region of the semiconductor processing chamber and forming a plasma of the germanium-containing precursor in the processing region. Forming the plasma of the germanium-containing precursor may be performed at a plasma power of greater than or about 500 W. The methods may include forming a second layer of material on the substrate. The second layer of material may include germanium oxide.

The present invention is a method for preparing GeO2 micron balls for lithium ion battery negative electrode. The method comprises the following steps: first, using a vacuum arc melting furnace to melt Al and Ge to form Al (100‑x) Ge x The master alloy ingot is cast and the melt is then sprayed onto a copper wheel to produce a precursor strip. The precursor strip is then ball-milled to produce a precursor powder with a particle size of 2-4 μm. Finally, the precursor powder is immersed in an HCl solution for dealloying for 8-12 hours to obtain GeO2 microspheres. The germanium dioxide anode material prepared by this method is simpler and more environmentally friendly than previous methods and processes. The microspheres are uniform in size and exhibit structural and performance advantages when used as a lithium-ion battery anode material.

The invention discloses an efficient sedimentation and recycling process based on germanium dioxide in hydrogen peroxide tail gas absorption liquid and application, and belongs to the technical field of industrial waste gas treatment and scattered metal recycling in the special gas industry. The process comprises the following steps: carrying out standing separation on hydrogen peroxide tail gas absorption liquid, and carrying out synergistic regulation on a sedimentation layer through pH and a composite flocculant to realize efficient sedimentation of germanium dioxide; dehydrating the germanium dioxide concentrated phase to form a filter cake, and carrying out three-stage countercurrent washing and staged heating drying to obtain a crude germanium dioxide solid product; the filtrate and the settled supernate are subjected to primary pH regulation, secondary membrane separation and adsorption and three-stage closed-loop hydrogen peroxide replenishing three-stage purification systems, so that efficient cyclic utilization of hydrogen peroxide is realized; the germanium dioxide recovery rate reaches 99% or above, the hydrogen peroxide recovery rate reaches 95%, the process cost is reduced by 40% or above, and the method has the advantages of being simple in process, high in resource recovery rate and low in operation cost and is suitable for treatment and resource utilization of germanium-containing tail gas in production of semiconductors, photovoltaic materials and special gases.

To provide a method for industrially advantageously producing a crystal excellent in crystallinity and useful for a semiconductor device, etc.SOLUTION: A method for producing a germanium dioxide crystal by crystal growth using a germanium-containing source material, wherein the source material contains antimony and the antimony content is 0.1 mol% or more and 10 mol% or less based on the source material, and the crystal is produced by heating the source material.SELECTED DRAWING: Figure 1

The invention relates to an improved synthesis process of a cesium germanium bromide halogen perovskite material. The improved synthesis process comprises the following reaction steps: (1) constructing a condensation reflux device and a nitrogen pipeline; (2) weighing germanium dioxide, hydrobromic acid, concentrated hypophosphorous acid and absolute ethyl alcohol; (3) putting the three-neck flask into an oil bath pan, and connecting a condensation reflux device and a nitrogen gas path; (4) after germanium dioxide is completely dissolved, the solution in the flask is clarified; (5) injecting the cesium bromide solution into the three-neck flask in a nitrogen environment, heating, and reacting for a period of time; (6) cooling the solution to room temperature in a nitrogen environment, and collecting a yellow cesium germanium bromide crude product; and (8) refining the crude cesium germanium bromide to obtain refined cesium germanium bromide, wherein the impurity content is lower than 0.5%. According to the method, the cesium-germanium bromide solution and methylbenzene are used, so that the problem that divalent germanium ions and cesium bromide are not completely reacted is solved, and a good solution is provided for synthesizing a high-purity cesium-germanium bromide material.

The invention provides a gold shell coated long-afterglow nano material for imaging photo-thermal and preparation and application of the gold shell coated long-afterglow nano material. The nano material comprises a Cr-doped zinc-gallium-germanium oxide long afterglow nano core, a mesoporous silica shell layer coated on the surface of the nano core and a gold shell layer coated on the outer surface of the mesoporous silica shell layer. The preparation method comprises the following steps: performing hydrothermal reaction and calcining to prepare a long afterglow nano core; the preparation method comprises the following steps: carrying out hydrolytic polycondensation on tetraethoxysilane (TEOS) under a cetyl trimethyl ammonium bromide (CTAB) template and an alkaline condition to form a mesoporous silica shell layer, removing the template and carrying out amination; adsorbing gold ions on the aminated surface, reducing the gold ions by using hydroboron to form gold seeds, and promoting growth by using hydroxylamine salt in a gold precursor solution containing carbonate to form a gold shell layer; the obtained nano material has near-infrared long-afterglow luminescence capability, generates photo-thermal temperature rise under 808 nm laser irradiation, and can be used for bacterial imaging and photo-thermal treatment of bacterial samples.