55 results about "Germanium oxide" patented technology

The invention discloses tetragonal system germanium dioxide and a hydrothermal synthesis method thereof. According to the method, hexagonal crystal system germanium dioxide is taken as a raw material, a hydrothermal reaction is carried out in an acidic aqueous solution, and efficient conversion from a hexagonal crystal system to a tetragonal crystal system is realized by controlling the reaction temperature to be 120-240 DEG C, the reaction time to be 24-48 hours and the pH value to be 1-3. According to the preferable scheme, the raw materials are subjected to calcination pretreatment at the temperature of 500-600 DEG C, the yield of the tetragonal crystal phase can be remarkably increased, and the synthesis temperature can be reduced to 120 DEG C. According to the invention, stable synthesis of tetragonal system germanium dioxide is realized for the first time under the mild condition of 240 DEG C and below, and the technical problem that high-temperature transformation at 1000 DEG C or above is needed in the traditional method is solved. The tetragonal crystal system germanium dioxide prepared by the method is of a regular polyhedral structure, has the particle size of 400-500nm, and can be used as a high-efficiency catalyst for polyester synthesis. The process is energy-saving and environment-friendly, the total utilization rate of the raw materials is increased by recycling the waste liquid, and the process has remarkable industrial application value.

This utility model discloses a germanium dioxide drying device, including a housing. An electric heater penetrates the bottom surface of the housing. A material box is installed inside the housing, and a metal handle is installed on one end of the material box. An installation box is installed on the rear end of the housing. A breathable mesh is fixedly inserted through the upper part of the housing. A door is installed on the end face of the housing via hinges, and a heat exchange box is fixedly inserted through the end face of the door. A control panel is installed on one side of the housing. Two sets of installation covers are fixedly inserted through the end face of the installation box. A bidirectional lead screw is installed inside the installation box via bearings, and two sets of lead screw sleeves are fitted onto the side walls of the bidirectional lead screw. Each set of lead screw sleeves has a connecting plate fixedly fitted onto its side wall. Beneficial effects: This utility model uses an installation box, which facilitates the installation of the drying structure, bringing convenience to the installation of the germanium dioxide drying device.

The invention discloses an IZO target material as well as a preparation method and application thereof. The IZO thin film comprises the following components in parts by weight: 75-90 parts of indium oxide; 10 to 25 parts of zinc oxide; 1-5 parts of germanium oxide; and 0.5 to 1.5 parts of silicon oxide. By doping germanium oxide and silicon oxide in a specific amount, the sheet resistance of the IZO thin film prepared from the IZO target material can be reduced, and the crystallization property of the IZO thin film at a high temperature can be inhibited. Due to the fact that glass network bodies GeO2 and SiO2 are added to inhibit crystallization of the IZO thin film at the high temperature, meanwhile, + 4 valence is doped into In2O3, the purpose of n-type doping can be achieved, the carrier concentration of IZO is increased, and the resistivity of the thin film is improved.

This invention belongs to the technical field of lithium-ion battery anode materials, specifically a method for preparing germanium-carbon nanocomposite materials for lithium-ion batteries using a hydrothermal method. The preparation method includes: adding germanium dioxide to a sodium hydroxide solution and stirring vigorously with a magnetic stirrer until the germanium dioxide is completely dissolved to obtain a clear sodium germanate solution; adding concentrated hydrochloric acid dropwise to the sodium germanate solution to form a white suspension, and then adding carbon nanotubes; placing the mixed solution in a hydrothermal reactor for hydrothermal reaction; repeatedly filtering and washing the material with anhydrous ethanol and ultrapure water; and finally vacuum drying to obtain the germanium-carbon nanocomposite material. This invention uses germanium dioxide and carbon nanotubes as raw materials to generate a nanostructured germanium-carbon composite material through a hydrothermal reaction. It does not use any binders or catalysts, has a simple and low-cost preparation process, and produces a material with stable performance, high energy density, and suitable for long-term storage, thus supporting the commercial application of germanium-based anode materials.

This invention discloses a process for recovering germanium from germanium-silicon alloy waste, belonging to the field of germanium recovery technology. The process includes the following steps: S1. Oxidizing and roasting the germanium-silicon alloy waste to obtain roasted clinker; S2. Sulfidating and fixing the roasted clinker and pyrite to obtain activated clinker; S3. Leaching the activated clinker with sulfuric acid, followed by solid-liquid separation, and collecting the germanium-containing leachate; S4. Performing multi-stage countercurrent extraction on the germanium-containing leachate using an amine extractant to obtain a loaded organic phase; then back-extracting the loaded organic phase with an alkaline back-extraction solution to obtain a germanate solution; S5. Hydrolyzing and precipitating the germanate solution to obtain pure germanium dioxide. The roasting process of this invention fixes impurities and activates elemental germanium into soluble germanium dioxide. The purification stage efficiently separates germanium from other impurity ions, and the final hydrolysis precipitation controls product consistency. This invention's recovery process has high recovery efficiency and purity, is more environmentally friendly, and is expected to achieve large-scale production.

Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the silicon-containing precursor in the processing region and forming a first layer of material on the substrate. The first layer of material may include silicon oxide. The methods may include providing a germanium-containing precursor to the processing region of the semiconductor processing chamber and forming a plasma of the germanium-containing precursor in the processing region. Forming the plasma of the germanium-containing precursor may be performed at a plasma power of greater than or about 500 W. The methods may include forming a second layer of material on the substrate. The second layer of material may include germanium oxide.

The invention discloses an efficient sedimentation and recycling process based on germanium dioxide in hydrogen peroxide tail gas absorption liquid and application, and belongs to the technical field of industrial waste gas treatment and scattered metal recycling in the special gas industry. The process comprises the following steps: carrying out standing separation on hydrogen peroxide tail gas absorption liquid, and carrying out synergistic regulation on a sedimentation layer through pH and a composite flocculant to realize efficient sedimentation of germanium dioxide; dehydrating the germanium dioxide concentrated phase to form a filter cake, and carrying out three-stage countercurrent washing and staged heating drying to obtain a crude germanium dioxide solid product; the filtrate and the settled supernate are subjected to primary pH regulation, secondary membrane separation and adsorption and three-stage closed-loop hydrogen peroxide replenishing three-stage purification systems, so that efficient cyclic utilization of hydrogen peroxide is realized; the germanium dioxide recovery rate reaches 99% or above, the hydrogen peroxide recovery rate reaches 95%, the process cost is reduced by 40% or above, and the method has the advantages of being simple in process, high in resource recovery rate and low in operation cost and is suitable for treatment and resource utilization of germanium-containing tail gas in production of semiconductors, photovoltaic materials and special gases.

To provide a method for industrially advantageously producing a crystal excellent in crystallinity and useful for a semiconductor device, etc.SOLUTION: A method for producing a germanium dioxide crystal by crystal growth using a germanium-containing source material, wherein the source material contains antimony and the antimony content is 0.1 mol% or more and 10 mol% or less based on the source material, and the crystal is produced by heating the source material.SELECTED DRAWING: Figure 1

The invention relates to an improved synthesis process of a cesium germanium bromide halogen perovskite material. The improved synthesis process comprises the following reaction steps: (1) constructing a condensation reflux device and a nitrogen pipeline; (2) weighing germanium dioxide, hydrobromic acid, concentrated hypophosphorous acid and absolute ethyl alcohol; (3) putting the three-neck flask into an oil bath pan, and connecting a condensation reflux device and a nitrogen gas path; (4) after germanium dioxide is completely dissolved, the solution in the flask is clarified; (5) injecting the cesium bromide solution into the three-neck flask in a nitrogen environment, heating, and reacting for a period of time; (6) cooling the solution to room temperature in a nitrogen environment, and collecting a yellow cesium germanium bromide crude product; and (8) refining the crude cesium germanium bromide to obtain refined cesium germanium bromide, wherein the impurity content is lower than 0.5%. According to the method, the cesium-germanium bromide solution and methylbenzene are used, so that the problem that divalent germanium ions and cesium bromide are not completely reacted is solved, and a good solution is provided for synthesizing a high-purity cesium-germanium bromide material.

The invention provides a gold shell coated long-afterglow nano material for imaging photo-thermal and preparation and application of the gold shell coated long-afterglow nano material. The nano material comprises a Cr-doped zinc-gallium-germanium oxide long afterglow nano core, a mesoporous silica shell layer coated on the surface of the nano core and a gold shell layer coated on the outer surface of the mesoporous silica shell layer. The preparation method comprises the following steps: performing hydrothermal reaction and calcining to prepare a long afterglow nano core; the preparation method comprises the following steps: carrying out hydrolytic polycondensation on tetraethoxysilane (TEOS) under a cetyl trimethyl ammonium bromide (CTAB) template and an alkaline condition to form a mesoporous silica shell layer, removing the template and carrying out amination; adsorbing gold ions on the aminated surface, reducing the gold ions by using hydroboron to form gold seeds, and promoting growth by using hydroxylamine salt in a gold precursor solution containing carbonate to form a gold shell layer; the obtained nano material has near-infrared long-afterglow luminescence capability, generates photo-thermal temperature rise under 808 nm laser irradiation, and can be used for bacterial imaging and photo-thermal treatment of bacterial samples.

A method for manufacturing a semiconductor device includes forming a plurality of fins on a substrate, wherein each fin of the plurality of fins includes silicon germanium. A layer of silicon germanium oxide is deposited on the plurality of fins, and a first thermal annealing process is performed to convert outer regions of the plurality of fins into a plurality of silicon portions. Each silicon portion of the plurality of silicon portions is formed on a silicon germanium core portion. The method further includes forming a plurality of source / drain regions on the substrate, and depositing a layer of germanium oxide on the plurality of source / drain regions. A second thermal annealing process is performed to convert outer regions of the plurality of source / drain regions into a plurality of germanium condensed portions.

The utility model relates to the technical field of waste gas recovery, and discloses a waste gas recovery system of a germanium dioxide reduction furnace, which comprises a waste gas treatment mechanism and a separation recovery mechanism, and the waste gas treatment mechanism comprises a first container tank and a second container tank. The waste gas treatment mechanism is composed of a first container tank and a second container tank, waste gas can sequentially pass through the two container tanks to be treated, targeted reactions can be conducted according to different components in the waste gas in the stage treatment mode, and the waste gas treatment effect is effectively improved. Sealing rings are arranged at the top and the bottom of the polymeric membrane, and slots matched with the sealing rings are formed in the upper mounting plate and the lower mounting plate, so that the polymeric membrane is stably mounted, meanwhile, the sealing rings can effectively prevent waste gas from leaking from mounting gaps, and an operator can conveniently and quickly open or close the fastening cover through the rotating plate; and parts in the tank can be conveniently mounted, maintained and replaced.

The energy-saving germanium dioxide preparation rectification device comprises a rectification tower, a raw material storage tank, a tower top condenser, a plate heat exchanger, a reboiler, a tubular heat exchanger and a man-machine interaction control cabinet, the top of the rectification tower is communicated with an upper guide pipe, and one end of the upper guide pipe is connected with the tower top condenser. The device has the beneficial effects that condensed heat released by the tower top condenser is conducted to the raw material storage tank through the plate heat exchanger, the germanium dioxide crude liquid to be rectified is preheated from normal temperature to 60-70 DEG C, the heating energy consumption of the germanium dioxide crude liquid entering the rectifying tower is reduced, the residual heat of the tower kettle reboiler is used for heating the rectified reflux liquid, the reflux liquid is heated to be close to the boiling point before entering the tower body, and the rectification efficiency is improved. Different from a'heating-condensation 'energy one-way loss mode of an existing device, a closed-loop heat exchange network of raw material preheating-rectification heating-condensation waste heat is designed, gradient utilization of condensation heat, raw material preheating and reflux heating is achieved, the heat recovery efficiency is improved by 40% or above, and therefore rectification energy consumption is remarkably reduced.

The application discloses an inorganic composite solid electrolyte and a preparation method thereof, and relates to the technical field of lithium batteries, and specifically discloses an inorganic composite solid electrolyte and a preparation method thereof. The preparation method of the inorganic composite solid electrolyte comprises the following steps: S1, mixing lithium salt, metal oxide A, metal oxide B and ammonium dihydrogen phosphate, wherein the metal oxide B is titanium oxide, and intermittent vibration ball milling is performed to obtain mixed powder; S2, adding lanthanum oxide and germanium oxide into the mixed powder obtained in the step S1, and continuing to perform intermittent vibration ball milling to obtain composite powder; and S3, performing low-temperature sintering on the composite powder obtained in the step S2, and pressing to obtain an inorganic composite solid electrolyte film layer. The preparation method can significantly improve the reaction activity and synergistic effect among raw materials by adopting two-step intermittent vibration ball milling and one-step low-temperature sintering, and the conductivity of the inorganic composite solid electrolyte and the lithium ion transmission performance and cycle life of the solid battery are improved, and meanwhile, no solvent is used in the preparation process, and the sintering cost is reduced.

This invention belongs to the field of germane preparation technology, and provides a method and system for continuous production of germane. The invention involves mixing an alkali metal hydroxide, germanium dioxide, sodium borohydride, and water to form an alkaline feed solution. This alkaline feed solution is then added to a sulfuric acid solution, and the reaction is carried out under a protective atmosphere to obtain germane. The addition rate of the alkaline feed solution is 0.8~3.5 kg / h. This invention precisely controls the feed rate of the alkaline feed solution at 0.8~3.5 kg / h, thereby accurately controlling the reaction process, effectively removing the heat of reaction, successfully suppressing the rapid increase in temperature and pressure within the reaction system, and significantly reducing the occurrence of competing side reactions such as sodium borohydride hydrolysis. This improves the yield of germane synthesis while ensuring a smooth, efficient, and stable production process. This invention is a continuous process; for example, one batch can be produced in 12 hours, and two batches in 16 hours, greatly improving the synthesis efficiency of germane and making it suitable for industrial continuous production.

The application provides a kind of imaging photothermal gold shell coated long afterglow nanomaterial and its preparation and application.The nanomaterial includes Cr doped zinc-gallium-germanium oxide long afterglow nanometer core, mesoporous silica shell layer coated on the surface of the nanometer core and gold shell layer coated on the outer surface of the mesoporous silica shell layer.The preparation method includes: hydrothermal reaction and calcination to prepare long afterglow nanometer core;Under the condition of alkali, make tetraethyl orthosilicate (TEOS) hydrolysis and condensation to form mesoporous silica shell layer, remove template and carry out amination under cetyltrimethylammonium bromide (CTAB) template;Gold ions are adsorbed on the aminated surface and reduced to form gold seeds using borohydride, and gold shell layer is formed by promoting growth using hydroxylamine salt in a gold precursor solution containing carbonate.The obtained nanomaterial has near-infrared long afterglow luminescence capability, and generates photothermal heating under 808 nm laser irradiation, which can be used for bacterial imaging and photothermal treatment of bacterial samples.

The application discloses energy-saving germanium dioxide preparation rectification device, including rectification tower, raw material storage tank, overhead condenser, plate heat exchanger, reboiler, tubular heat exchanger and man-machine interaction control cabinet, the top of rectification tower is connected with upper guide pipe, and the one end of upper guide pipe is connected with overhead condenser. Advantage: the application conducts the condensation heat released by overhead condenser to raw material storage tank through plate heat exchanger, preheats germanium dioxide crude liquid to be rectified from normal temperature to 60-70 DEG C, reduces the heating energy consumption of entering rectification tower, heats rectification reflux liquid by using the waste heat of tower kettle reboiler, makes the reflux liquid temperature rise to the vicinity of boiling point before entering tower body, reduces the heating load in tower, is different from the one-way energy loss mode of "heating-condensation" of prior art device, designs the closed loop heat exchange network of raw material preheating-rectification heating-condensation waste heat, realizes the cascade utilization of condensation heat and raw material preheating, reflux liquid heating, and the heat recovery efficiency is improved by more than 40%, so that the rectification energy consumption is significantly reduced.

The invention belongs to the field of quantum calculation research, relates to a germane-73 ingot preparation technology, and provides a method for preparing a high-purity germane-73 isotope by using amorphous germanium dioxide 73, and the method comprises the following steps: calcining germanium dioxide 73 at 450-600 DEG C to obtain amorphous germanium dioxide 73; according to the method, amorphous germanium dioxide 73 is reduced in a hydrogen atmosphere by adopting a multi-section heating and dynamic hydrogen flow adjusting strategy to obtain a germane-73 isotope crude product, and the germane-73 isotope crude product is subjected to zone melting to obtain the high-purity germane-73 isotope. According to the method, the reduction yield can be effectively improved by designing the calcining temperature, the multi-section heating and the dynamic hydrogen flow adjusting strategy, the product can be subjected to zone melting to obtain the germane-73 with the purity larger than or equal to 99.99995%, and the use requirement of a chip base material coating can be met.

The invention discloses a low-dielectric-loss chip packaging glass substrate and a preparation method thereof, and relates to the technical field of glass manufacturing. The chip packaging glass substrate is prepared from the following raw materials: silicon dioxide, boric oxide, zirconium dioxide, germanium dioxide, aluminum oxide, gadolinium oxide, a composite fluxing component and a low-loss dielectric functional component, the composite fluxing component is prepared from the following raw materials: magnesium fluoride, lithium metaborate and strontium fluoride; the low-loss dielectric functional component is prepared from the following raw materials: silicon nitride, boron nitride micro powder and a coupling agent solution. The preparation method of the chip packaging glass substrate comprises the following steps: preparing the composite fluxing component, preparing the low-loss dielectric functional component, forming the glass substrate, and preparing the chip packaging glass substrate. The prepared chip packaging glass substrate is low in dielectric loss and excellent in mechanical property.

The invention discloses a method for removing floating slag on the surface of germanium melt, which belongs to the technical field of crystal growth and comprises the following steps: 1) putting a certain amount of zone-melting germanium ingot into a material washing kettle, and then injecting deionized water into the material washing kettle to cover the germanium ingot; 2) heating to 70-100 DEG C, adding any one or more of ammonia water or amine compounds with the concentration of 5-25% and the purity of any one of analytically pure, EL grade or UP grade into the washing kettle, and adding 0.2-5% of the volume of the deionized water; 3) after 2-10 minutes, hydrogen peroxide with the concentration of 20%-45% is continuously added into the material washing kettle, and the adding amount is 5%-15% of the volume of the deionized water. According to the method, a germanium ingot cleaning method and a drying method are changed, and a proper amount of hydrogen is introduced during material melting to reduce germanium oxide, so that scum is completely removed in the early stage of crystal growth, and the crystallization rate and the germanium single crystal quality are improved.

The use of selective deposition of silicon nitride can eliminate conventional patterning steps by allowing silicon nitride to be deposited only in selected and desired areas. Using a silicon iodide precursor alternately with a thermal nitrogen source in an ALD or pulsed CVD mode, silicon nitride can be deposited preferentially on a surface such as silicon nitride, silicon dioxide, germanium oxide, SiCO, SiOF, silicon carbide, silicon oxynitride, and low k substrates, while exhibiting very little deposition on exposed surfaces such as titanium nitride, tantalum nitride, aluminum nitride, hafnium oxide, zirconium oxide, aluminum oxide, titanium oxide, tantalum oxide, niobium oxide, lanthanum oxide, yttrium oxide, magnesium oxide, calcium oxide, and strontium oxide.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a capping mask layer positioned on the substrate; a first gate insulating layer positioned along the capping mask layer, inwardly positioned in the substrate, and having a U-shaped cross-sectional profile; a first work function layer positioned on the first gate insulating layer; a first conductive layer positioned on the first work function layer; and a first capping layer positioned on the first conductive layer. The first capping layer comprises germanium oxide. A top surface of the first capping layer and a top surface of the capping mask layer are substantially coplanar.

The invention relates to the technical field of 3D printing materials, in particular to a temperature-resistant 3D printing PETG polyester material and a preparation method thereof.The temperature-resistant 3D printing PETG polyester material is prepared from, by mass, 10-100 parts of polybasic acid, 20-180 parts of polyhydric alcohol, 10-50 parts of functional monomer, 1-20 parts of antioxidant, 2-20 parts of dispersing agent, 0.1-1.5 parts of protective agent and 0.03-0.3 part of germanium dioxide. The PETG polyester material disclosed by the invention is applicable to the 3D printing material, has relatively good temperature resistance and toughness, and can prevent brittle rupture of the 3D printing material in a use process from influencing use.

This invention discloses a method for preparing dioctyl terephthalate (DOTP) from polyethylene terephthalate (PET), comprising: crushing, washing, and drying waste PET to obtain PET particles; depolymerizing the obtained PET particles in the presence of ethylene glycol and a composite depolymerization catalyst to obtain a depolymerization product; adding the obtained depolymerization product to octanol and a transesterification catalyst for transesterification reaction; after the reaction is completed, post-treatment yields dioctyl terephthalate; wherein the composite depolymerization catalyst is a mixture of zinc oxide and germanium dioxide; and the transesterification catalyst is a supported solid acid catalyst. This invention features high raw material utilization and good environmental performance, using waste PET as raw material to prepare DOTP via transesterification reaction, thus solving the pollution problem of waste PET; simultaneously, ethylene glycol, octanol, and the catalyst can be recycled during the reaction, reducing raw material consumption and wastewater.

The invention discloses a binuclear copper modified molybdenum germanic acid crystalline material as well as a preparation method and application thereof. The molecular formula of the material is [Cu2 (L) 2 (HL) 4 (H2O) 2 (GeMo12O40) 2]. 3H2O; l is 1-(4-carboxyl benzyl)-[4, 4 '] bipyridine chloride; the crystal system is monoclinic; the space group is P21 / n; the cell parameters are as follows: a is equal to 18.0008 (6), b is equal to 20.8877 (6), c is equal to 20.5829 (7), alpha is equal to 90 degrees, beta is equal to 90.2370 (10) degrees, gamma is equal to 90 degrees, and Z is equal to 2. The preparation method comprises the following steps: 1, dissolving germanium oxide, ammonium molybdate, a copper salt and a ligand L in water, and regulating the pH value of the solution by using an acid regulator to obtain a reaction solution; and step 2, reacting the reaction solution in the step 1 in a high-temperature closed environment, and cooling to room temperature after the reaction is finished to obtain the binuclear copper modified molybdenum germanic acid crystalline material. According to the crystalline material synthesized by the invention, Keggin type polyacid GeMo12 and a binuclear copper site are integrated in a single framework, and electrons are directly transferred into the copper site from the polyacid through weak interaction after the polyacid obtains the electrons, so that the catalytic performance is greatly improved.

The application discloses a spot positioning solar blind ultraviolet photodetector based on a gallium oxide-indium germanium oxide cross micron wire heterojunction and a preparation method thereof, and belongs to the technical field of solar blind ultraviolet photodetection. The detector comprises a substrate, cross-contacted Ga2O3 micron wires and In2Ge2O7 micron wires, and electrodes arranged at two ends of the micron wires. The cross micron wire heterojunction is prepared by a mechanical transfer method, and the Ga2O3 micron wire and the In2Ge2O7 micron wire are accurately placed in cross. Under a constant bias, the local enhanced electric field of the heterojunction area only makes the photo-generated carriers generated at the cross point be collected with high efficiency, the responsivity of the device irradiated by light deviating from the cross point is low, and thus the position of the light spot is positioned. The application utilizes the solar blind intrinsic absorption characteristics of Ga2O3 and In2Ge2O7 and the photocurrent spatial localization effect of the cross heterostructure, and has the outstanding advantages of high spatial resolution, simple structure, easy flexible integration, high positioning accuracy and the like.

The application discloses a tourmaline germanium oxide titanium dioxide composite nanomaterial and a preparation method and application thereof. The composite nanomaterial is prepared by using a brand-new negative ion releasing mechanism, and is used for preparing a new negative ion releasing fiber. The nanometer powder prepared by the application can play a catalytic polymerization role in in-situ polymerization, and does not need to use an additional catalyst. The tourmaline serves as a dispersion carrier of the germanium oxide and titanium dioxide nanometer powder, can control the polymerization reaction speed, improve the reaction uniformity, makes the polyamide 6 molecular weight more uniform, and is favorable to improving the spinnability and fiber mechanical property of the spinning fiber.

This invention discloses a high-efficiency sedimentation and recycling process and application of germanium dioxide in hydrogen peroxide tail gas absorbent, belonging to the field of industrial waste gas treatment and rare dispersed metal recovery technology in the specialty gas industry. The process includes: static separation of the hydrogen peroxide tail gas absorbent; efficient sedimentation of germanium dioxide by synergistic adjustment of pH and composite flocculant in the sedimentation layer; dehydration of the concentrated germanium dioxide phase to form a filter cake, followed by three-stage countercurrent washing and staged heating drying to obtain crude germanium dioxide solid; and a three-stage purification system for the filtrate and supernatant after sedimentation, consisting of primary pH adjustment, secondary membrane separation adsorption, and tertiary closed-loop hydrogen peroxide replenishment, to achieve efficient recycling of hydrogen peroxide. This results in a germanium dioxide recovery rate of over 99%, a hydrogen peroxide recovery rate of over 95%, and a reduction in process cost of over 40%. The process is simple, has high resource recovery rate, and low operating cost, and is suitable for the treatment and resource utilization of germanium-containing tail gas in semiconductor, photovoltaic material, and specialty gas production.

The application belongs to the technical field of medical material preparation, and particularly relates to a composite material based on photodynamic therapy of periodontitis and a preparation method and application thereof. The method disperses sodium dodecyl benzene sulfonate, tin chloride pentahydrate and L-cysteine in a mixed solution of water and ethylene glycol, uniformly stirs, and obtains nanosheets through hydrothermal reaction; then the nanosheets are mixed with mercapto-polyethylene glycol through ultrasonic, to obtain tin disulfide nanosheets; a germanium oxide solution, a chromium nitrate nonahydrate solution, zinc nitrate hexahydrate, hydrated gallium nitrate and water are mixed, stirred in the dark, ammonia water is added and uniformly stirred, and then hydrothermal reaction is carried out, to obtain long-light-emitting nanoparticles; finally, the tin disulfide nanosheets and the long-light-emitting nanoparticles are dissolved in water, stirred in the dark, a methylene blue solution is added and continuously stirred in the dark, and the composite material based on photodynamic therapy of periodontitis is obtained. The composite material based on photodynamic therapy of periodontitis prepared by the method can effectively improve the curative effect of photodynamic therapy in the treatment of periodontitis.

The invention relates to the technical field of battery positive electrode materials, and provides a preparation method of a lithium iron phosphate battery positive electrode material, which comprises the following steps: mixing iron phosphate, lithium carbonate, germanium dioxide, zirconium dioxide, lithium fluoride and water, adding a dispersing agent and a carbon source to obtain slurry, and carrying out ball milling, drying, compression molding, roasting and grinding to obtain the lithium iron phosphate battery positive electrode material. According to the technical scheme, the problems of low specific capacity and poor cycle performance of the lithium iron phosphate battery positive electrode material in the prior art are solved.