Ge-doped AZO target and preparation method thereof

A technology of target material and germanium oxide, which is applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems of unstable conductivity and failure of AZO film, and achieve good film adhesion and low production cost , the effect of high light transmittance

Inactive Publication Date: 2009-11-11
CSG HOLDING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The thin film made of Al-doped ZnO material, that is, the AZO thin film, has good electrical conductiv...

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Take 1g of powdered aluminum oxide, 0.1g of germanium oxide, and 98.9g of zinc oxide with a purity of 99.95% and a particle size of 20-200 nanometers, add 0.5 g of polyvinyl alcohol, and add water to mix uniformly; then the mixture is spray-dried; then , The dried powder is pressed into a steel mold to form a green body with the desired shape and strength, followed by wet isostatic pressing at 100 MPa. After the pressed green body is machined to be suitable for sintering, it is sintered at 1200°C to form a block with a density of 96% of the theoretical density, and then machined again to make a standard-sized target.

[0022] Applying this target material, a zinc-aluminum oxide transparent conductive film containing germanium is deposited on a polyester film or a glass substrate by radio frequency sputtering deposition method, and the thickness of the obtained film is 500-600nm, and the resistivity is 0.5×10 -3 Ω·cm, the visible light transmittance at 550nm wavelength i...

Embodiment 2

[0024] Take 10g of powdered aluminum oxide, 5g of germanium oxide, and 85g of zinc oxide with a purity of 99.95% and a particle size of 20-200 nanometers, add 2 grams of polyethylene glycol, and mix them in water; then spray dry the mixture: The temperature is 180-270°C, the air outlet temperature is 100-125°C, and the rotational speed of the rotary atomizer is 6000-12000 rpm; then, the dried powder is pressed into a steel mold to form a green body with the required shape and strength, and then Wet isostatic pressing was performed at 160 MPa. After the pressed green body is machined to be suitable for sintering, it is sintered at 1600°C into a block with a density of 96% of the theoretical density, and then machined again to make a standard-sized target.

[0025] Applying this target material, a zinc-aluminum oxide transparent conductive film containing germanium is deposited on a polyester film or a glass substrate by radio frequency sputtering deposition method, and the thic...

Embodiment 3

[0027] Take 4g of powdered alumina with a purity of 99.95% and a particle size of 20-200 nanometers, 1.8g of germanium oxide, and 94.2g of zinc oxide, then add 1.2 grams of polyvinyl butyral, and add it to water and mix well; then spray the mixture Drying: The air inlet temperature is 180-270°C, the air outlet temperature is 100-125°C, and the rotational speed of the rotary atomizer is 6000-12000 rpm; then, the dried powder is pressed into a steel mold to form a product with the required shape and strength. The green body is then subjected to wet isostatic pressing at 130 MPa. After the pressed green body is machined to be suitable for sintering, it is sintered at 1300°C into a block with a density of 96% of the theoretical density, and then machined again to make a standard-sized target.

[0028] Applying this target material, a zinc-aluminum oxide transparent conductive film containing germanium is deposited on a polyester film or a glass substrate by radio frequency sputter...

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Abstract

The invention relates to a Ge-doped AZO target, comprising 1-10% of alumina and 0.1-5% of germanium oxide and the balance zinc oxide by weight percentage. The invention also provides a preparation method of the Ge-doped AZO target, including the steps: S1, the raw material of zinc oxide, alumina and germanium oxide powder is weighed respectively in preset proportion, binding agent is added, and water is added for even mixing; S2, the mixture is dried, and the powder is formed by pressing to form a blank body with preset shape and strength; S3, the blank body is sintered at normal pressure and normal atmosphere with the sintering temperature of 1200-1600 DEG C. Transparent conductive film prepared by adopting the target provided by the invention has the characteristics of high light transmittance, low resistance, good film adhesive power, complete and compact structure and good stability.

Description

【Technical field】 [0001] The invention relates to the field of photoelectric materials, in particular to a germanium-doped AZO target material and a preparation method thereof. 【Background technique】 [0002] In recent years, with the development of liquid crystal displays and solar cells, transparent conductive films have become one of the key materials. How to reduce the cost of transparent conductive film materials and improve the performance of film materials is the primary goal at present. Transparent Conductive Oxide (TCO) thin films mainly include oxides of In, Sn, Sb, Zn and Cd and their composite multi-element oxide thin film materials. Low optoelectronic properties, transparent conductive oxide thin films are widely used because of their properties of being both transparent and conductive. [0003] The ZnO-based TCO film has the characteristics of low cost, non-toxicity and high stability. Pure ZnO is a wide bandgap direct bandgap semiconductor with a resistivity...

Claims

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Application Information

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IPC IPC(8): C04B35/453C04B35/622C23C14/34C23C14/06
Inventor 胡茂横王会文张珂
Owner CSG HOLDING
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