High surface quality GaN wafer and method of fabricating same

a technology of gan wafers and wafers, applied in the field of alxgayinzn, can solve the problems of poor device performance, significant thermal stress, internal stress, etc., and achieve the effect of superior surface quality
US20060029832A1Inactive Publication Date: 2006-02-09XU XUEPING +1
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
XU XUEPING
Publication Date
2006-02-09
Estimated Expiration
Not applicable · inactive patent

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Abstract

AlxGayInzN, wherein 0≦x≦1, 0≦y≦1, 0≦z≦1, and x+y+z=1, characterized by a root mean square surface roughness of less than 1 nm in a 10×10 μm2 area. The AlxGayInzN may be in the form of a wafer, which is chemically mechanically polished (CMP) using a CMP slurry comprising abrasive particles, such as silica or alumina, and an acid or a base. High quality AlxGayInzN wafers can be fabricated by steps including lapping, mechanical polishing, and reducing internal stress of said wafer by thermal annealing or chemical etching for further enhancement of its surface quality. CMP processing may be usefully employed to highlight crystal defects of an AlxGayInzN wafer.
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Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This is a continuation of U.S. patent application Ser. No. 10 / 272,761 filed Oct. 17, 2002, now allowed, which in turn is a continuation-in-part of U.S. patent application Ser. No. 09 / 877,437 filed Jun. 8, 2001 in the names of Xueping Xu and Robert P. Vaudo, issued Dec. 3, 2002 as U.S. Pat. No. 6,488,767. GOVERNMENT RIGHTS IN INVENTION

[0002] The invention disclosed herein includes aspects that were involved in the performance of United States Contract No. DASG60-00-C-0036 issued by the U.S. Army Space and Missile Defense Command and United States Contract No. N00014-00-3-0013 issued by The Office of Naval Research. The government has certain rights in the invention.BACKGROUND OF THE INVENTION

[0003] 1. Field of the Invention

[0004] This invention relates to AlxGayInzN (wherein 0≦x≦1, 0≦y≦1, 0≦z≦1, and x+y+z=1) having superior surface quality, including in various embodiments, articles formed of such AlxGayInzN material, e.g., in wafer f...

Claims

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