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Plasma-generating source comprising a belt-type magnet, and thin-film deposition system using same

A technology of plasma and generating source, applied in the field of plasma generating source, can solve the problems of reducing plasma density, weakening process reliability, reducing microwave transmittance, etc., and achieves the effect of improving the mean free path and improving the straightness.

Active Publication Date: 2014-04-30
KOREA INST OF FUSION ENERGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when such a plasma generation source performs a deposition process, the deposition material will plate the dielectric window, thereby significantly reducing the microwave transmittance and reducing the plasma density, thereby weakening the reliability of the process.

Method used

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  • Plasma-generating source comprising a belt-type magnet, and thin-film deposition system using same
  • Plasma-generating source comprising a belt-type magnet, and thin-film deposition system using same
  • Plasma-generating source comprising a belt-type magnet, and thin-film deposition system using same

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Embodiment Construction

[0084] Below, the detailed description is based on Figure 1a to Figure 1d The modified embodiment of the plasma generation source and the sputtering device, neutral particle beam generation source and thin film deposition system based on its application.

[0085] observation from above Figure 1a and Figure 1d When the microwave irradiation device 200 is irradiated, it takes a shape such as a circle, an ellipse, an orbital shape using a circle, an ellipse, or a quadrilateral. figure 2 shows the situation where the slit 250 is formed on the microwave irradiation device 200, image 3 A case where a slit is formed in a circular microwave irradiation device 200 is shown in , Figure 4 A quadrangular or cylindrical microwave irradiation device 200 is shown, and a plurality of such microwave irradiation devices 200 may be provided to enhance output.

[0086] refer to Figure 5 , shows a sputtering device 800 using the plasma generation source. The sputtering device 800 is ch...

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PUM

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Abstract

The present invention relates to a plasma-generating source which generates uniform and high-density plasma at a high vacuum level, and to a use thereof. The object of the present invention is to obtain a high-quality thin film by using the plasma-generating source in a thin-film deposition system which comprises: a device for sputtering a similar plasma-generating source, a neutral particle-beam generating source, or a combination of the device for sputtering and the neutral particle-beam generating source. According to the present invention, a magnetic field formed by at least one pair of belt-type magnets, and microwaves generated by a microwave-radiation device, are used to generate plasma, and a continuous structure of the belt-type magnets is used to induce a return path for electrons so as to maximize a plasma-confinement effect, thereby achieving the above object.

Description

technical field [0001] The present invention relates to a plasma generation source and its application, in particular to a plasma generation source that utilizes the arrangement of permanent magnets to generate high-density plasma and a sputtering device that can realize high efficiency and large area and generate high-flux neutral A neutral particle beam generating source for particle beams and a thin film deposition system combining a sputtering device and a high-throughput neutral particle beam generating source. Background technique [0002] Plasma has various applications, and especially becomes an important technical element in the process of forming thin films. In the field of cutting-edge materials such as semiconductors, OLEDs, solar cells, LEDs, and diamond thin films, high-quality thin-film deposition is required, and the generation of large-area, high-density plasmas that can meet this demand is a particularly important technology. [0003] When forming thin fil...

Claims

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Application Information

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IPC IPC(8): H05H1/34H01L21/205C23C16/50
CPCH01J37/3266H01J37/32669C23C14/354H05H2001/4607C23C14/54H01J37/32192C23C14/357H01J37/34H05H1/461
Inventor 俞席在金圣凤
Owner KOREA INST OF FUSION ENERGY
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