89results about How to "Reduced connection reliability" patented technology

When semi-amorphous TFTs are used for forming a signal line driver circuit and a pixel, a large amplitude is required for driving the pixel, and a large power supply voltage is thus needed. On the other hand, when a shift register is made up of transistors having a single conductivity, a bootstrap circuit is required, and a voltage over a power supply is applied to a specific element. Therefore, not both the driving amplitude and the reliability can be achieved with a single power supply. According to the invention, a level shifter having a single conductivity is provided to solve such a problem.

Provided is a connector which can absorb the position gap with respect to a counterpart connector, and can maintain an excellent connection with an electric circuit within a case to which the connector is attached. The connector (1) connected to a counterpart connector secured to a case of a motor is comprised of an outer housing (5) attached to a case of an inverter; a first inner housing (6) which contains a first terminal (20) engaged with a terminal of the counterpart connector and which is contained in the outer housing (5) so as to move in an engaging direction (Y) of the first terminal (20) and a direction intersecting with the engaging direction (Y) in order to engage with the counterpart connector; a second inner housing (10) which contains a second terminal (11) electrically connected to an electric circuit within the case and which is fixed within the outer housing (5); a connection portion (9) which is composed of a braided electric wire (90) and which electrically connects the first terminal (20) to the second terminal (11); and a packing (7) attached to the first inner housing (6).

To prevent lowering of connection reliability of soldering connection portions of electronic equipment, there is provided electronic equipment which is equipped with a connector electrically connected to an electric motor, a control board and a power module board to which the connectors and other electric parts are electrically connected by soldering, a base for supporting the boards and the connector while overlapped with the boards and cases for fixing the connector while the connector is exposed from an opening portion, and fixing the boards while the boards and the base are accommodated in the cases. The connector is supported by the base through a beam as a flexible metal piece.

A semiconductor device and a production method thereof capable of reducing warps of a semiconductor wafer when packaging at a wafer level in a SiP type semiconductor device, is configured that an insulating layer is formed by stacking a plurality of resin layers on a semiconductor chip formed with an electronic circuit, wiring layers are buried in the insulating layer and electrically connected to electrodes, and formation areas of the plurality of resin layers become gradually smaller from an area of an upper surface of the semiconductor chip as they get farther from the semiconductor chip, so that a side surface and an upper surface of each of the resin layers and the upper surface of the semiconductor chip form a stepwise shape.

A soldering technology, particularly a lead-free soldering technology, that can secure the reliability of a whole electronic device is provided. In a method for manufacturing a printed circuit board for electronic devices with a substrate to which a plurality of electronic parts having connection terminals with different metal compositions are connected by soldering, a plurality of solder pastes comprising solder components with different compositions are used, and when the electronic parts are connected by soldering to the substrate, a solder paste having a solder component with a different composition is used for each of the metal compositions for the connection terminals of the electronic parts.

In a temperature sensor section of a semiconductor integrated circuit device, first vias of tungsten are formed at the topmost layer of a multi-layer wiring layer and pads of titanium are provided on regions of the multi-layer wiring layer which covers the vias. An insulating layer is provided in such a way as to cover the multi-layer wiring layer and the pads, second vias are so formed as to reach the pads. Vanadium oxide is buried in the second vias by reactive sputtering, and a temperature monitor part of vanadium oxide is provided in such a way as to connect the second vias each other. Accordingly, the temperature monitor part is connected between the two wires.