There is provided a method for producing a
semiconductor device, capable of suppressing generation of voids at an interface between a
semiconductor element and an under-fill sheet to produce a
semiconductor device with high reliability. The method includes providing a sealing sheet having a support and an under-fill material laminated on the support; thermally pressure-bonding a circuit surface of a semiconductor
wafer, on which a connection member is formed, and the under-fill material of the sealing sheet under conditions of a reduced-
pressure atmosphere of 10000 Pa or less, a bonding pressure of 0.2 MPa or more and a heat pressure-bonding temperature of 40° C. or higher; dicing the semiconductor
wafer to form a semiconductor element with the under-fill material; and electrically connecting the semiconductor element and the adherend through the connection member while filling a space between the adherend and the semiconductor element using the under-fill material.