84results about How to "Reduce planarity" patented technology

A probe card has probe sections with silicon probes formed on an insulated circuit board that are connected by an adhesive on the supporting structures. The supporting structures are supported by fixing structures with each of the fixing structures being fixed on the circuit board. The probe card has the probe section's wiring and the circuit board's wiring being electrically connected by a metallic wiring and the sub printed circuit and the pogo pin electrically connected by an anisotropic conducting film with the sub printed circuit board and the pogo pin. A metallic layer is formed by the plating of the probe in the probe section. This reduces the manufacturing costs by enabling the damaged probes during manufacturing to be discarded and the others being used continually.

A fingerprint sensing device (and associated method of manufacturing) comprises a sensing chip arranged on a substrate with readout circuitry. The sensing chip comprising a plurality of sensing elements having a surface defining a sensing plane, each sensing element being configured to provide a signal indicative of an electromagnetic coupling between a sensing element and a finger placed on the sensing device; bond wires arranged between bond pads located on the sensing chip on the substrate, respectively, to electrically connect the sensing chip to the readout circuitry. A portion of the bond wire protrudes above the chip and an adhesive is arranged on the sensing chip to covering to cover the chip so that the portion of the bond wire protruding above the chip is embedded in the adhesive. A protective plate is attached to the sensing chip by the adhesive and forms an exterior surface of the device.

To provide an SOI substrate with an SOI layer that can be put into practical use, even when a substrate with a low allowable temperature limit such as a glass substrate is used, and to provide a semiconductor substrate formed using such an SOI substrate. In order to bond a single-crystalline semiconductor substrate to a base substrate such as a glass substrate, a silicon oxide film formed by CVD with organic silane as a source material is used as a bonding layer, for example. Accordingly, an SOI substrate with a strong bond portion can be formed even when a substrate with an allowable temperature limit of less than or equal to 700° C. such as a glass substrate is used. A semiconductor layer separated from the single-crystalline semiconductor substrate is irradiated with a laser beam so that the surface of the semiconductor layer is planarized and the crystallinity thereof is recovered.

The invention discloses a double-layered electrostatic spinning film sensor for detecting nitryl explosives. The sensor comprises a double-layered film structure, the bottom layer of the sensor is a gelatin electrostatic spinning film (GEL), serves as a skeleton layer and is placed on the surface of a glass sheet, a top layer uses polystyrene as a carrier, and is blended with fluorescent sensing polymer to prepare the electrostatic spinning film (PS-P), and the layer serves as a sensing layer. The double-layered electrostatic spinning film has the advantages that gelatin has a large number of amino and hydroxyl groups, nitroaromatic compounds are enriched through hydrogen bond interaction between the nitroaromatic compounds and gelatin so that the nitroaromatic compounds are gathered on the PS-P sensing layer, and the effect of improving the quenching efficiency is achieved; and the double-layered electrostatic spinning film sensor acts in a porous skeleton below the PS-P layer, the gelatin layer can allow molecules of the nitroaromatic compounds to simultaneously diffuse on the top and the bottom of the PS-P layer, and then permeability of the PS-P layer is greatly improved.