109results about "Thermistors" patented technology

The invention discloses a thermistor mounting method and related equipment. The thermistor mounting method comprises the following steps: applying micro-power alternating bias excitation to a thermistor to obtain cold-state thermal resistance reference data; mounting a thermistor on the surface of the solder paste, collecting real-time resistance data in a temperature rise process, and performing normalized difference according to cold-state thermal resistance reference data to obtain a normalized dynamic resistance curve; performing derivative continuity and extreme value distribution analysis on the curve to obtain a wetting connectivity index; when the wetting connectivity index reaches a preset threshold value, executing second-order extreme value spacing analysis to obtain interface heat flux density distribution, calculating an interface thermal resistance dispersion vector field, and adjusting the transmission chain speed and furnace chamber airflow parameters according to the interface thermal resistance dispersion vector field; and a backtracking dynamic resistance curve is obtained in the cooling process, and the backtracking dynamic resistance curve and the standardized dynamic resistance curve are differentiated to obtain a curing quality factor. According to the invention, real-time identification in a defect germination stage and instant correction in a solder solidification window stage in a thermistor mounting process can be realized, and the mounting quality and reliability are improved.

The present disclosure provides a high-temperature resistant nano-copper produced by laser direct writing, a preparation method and an application thereof. The high-temperature resistant nano-copper exhibits excellent oxidation resistance, thermal stability and superior conductivity. In this disclosure, the preparation is simple, and the nano-copper oxide ink can be stored for extended periods without being affected by oxidation. It is suitable for various manufacturing processes including printing, coating, and other similar methods. Moreover, based on laser direct writing, the processing efficiency is high, enabling the one-step integration of multi-performance of the high-temperature resistant nano-copper. The high-temperature resistant nano-copper described in the present disclosure can be used as an interconnection circuit in an integrated sensor system based on all-laser in-situ direct writing, and can be widely applied in fields of aerospace, automobile, electronics, etc.

Composite materials for simultaneous thermal management and electromagnetic interference screening of radiofrequency-based electronic systems are provided. The materials contain a phase change material and one or more electrically and thermally conductive filler particles. The materials provide a passive system for thermal management and EMI shielding that is lightweight, does not contain moving parts, and does not require an external power supply.

A system includes an inverter configured to convert DC power from a battery to AC power to drive a motor, wherein the inverter includes: a power module, the power module including a thermistor assembly, the thermistor assembly including: a conductive layer including a trench; a thermistor connected to the conductive layer and disposed across the trench; and a first height control feature between the conductive layer and the thermistor.

A liquid level sensor can include a circuit board and a thermistor bridge supported by the circuit board comprising a first pair of thermistors and a second pair of thermistors. A heat sink can be coupled to the circuit board proximate the first pair of thermistors and not the second pair of thermistors. A power supply can be configured to provide pulses of electrical current through the thermistor bridge. A controller in communication with the thermistor bridge can be configured to receive a measurement signal from the thermistor bridge output a low product indication when the measurement signal satisfies a predetermined condition.

To provide a temperature sensor in which a thermistor is accurately determined with respect to a case.SOLUTION: A thermistor assembly body 110 includes a thermistor 111, rigid two lead members 112, and a first resin part 113. A first end part 1121 of the two lead members 112 is connected to the thermistor 111 and the thermistor 111 is sealed by the first resin part 113.SELECTED DRAWING: Figure 6

The present invention relates to a sensor comprising a ceramic substrate (1) and two metallization layers (2) applied on opposite surfaces of the ceramic substrate (1), each having an adhesion layer (2A) applied directly onto the ceramic substrate (1) and a gold layer (2B) applied on each adhesion layer (2A). Furthermore, the present invention relates to a method for manufacturing the sensor.

An electrical device is specified. According to one embodiment, an electrical device includes an electrical element including two electrodes and two wires connected to the electrodes, where each wire includes a flat region constituting a wire end, and where the flat region is configured for contacting the electrodes. The invention further relates to a method for producing an electrical device.

The invention provides a thermosensitive resistor and a manufacturing method. The thermosensitive resistor comprises a substrate, electrodes and a protective layer, the matrix is prepared from a nano-scale ceramic powder and high-molecular polymer composite material, the nano-scale ceramic powder is uniformly dispersed in a high-molecular polymer, and the high-molecular polymer is polyimide; the electrode is made of an alloy material composed of silver, palladium and rare earth elements, and the electrode is deposited on the surface of the base body through the physical vapor deposition technology. The protective layer wraps the surfaces of the base body and the electrodes, the protective layer is composed of a multi-layer composite material, and the multi-layer composite material comprises an inner layer, a middle layer and an outer layer. Compared with a traditional product, the size is greatly reduced, the development requirement for miniaturization of electronic equipment is met, meanwhile, the layering failure problem caused by thermal expansion under large-current impact is effectively prevented, and the stability of product performance is guaranteed.

The invention relates to an electronic device comprising: - a component having a resistance (R120) with a negative temperature coefficient, and - a temperature control means having an electrical resistance (R130) varying as a function of the temperature T such that the sum of the total resistance (R) is, on a second temperature subrange (302), greater than a setpoint temperature (305), strictly greater than the total resistance (R) at the setpoint temperature (305).

The application discloses a recyclable NTC thermistor, which comprises a shell, a viscose cover plate, a sensitive element, a connecting end, a movable ring, a tray, an anti-explosion groove, a movable plate, a pressing plate, a wedge-shaped plate and a rotating plate; the installation assembly of the pressing plate pressing the sensitive element is formed through the wedge-shaped plate and the rotating plate; the cooperation assembly of the rotating plate being separated from the wedge-shaped plate and the pressing plate guarantees the pressing effect on the sensitive element and makes the tray separated from the shell; through pressing the movable ring, the movable plate and the wedge-shaped plate are moved downwards; on one hand, the wedge-shaped plate is moved downwards, the pressing plate is moved along the movable groove and is pressed on the outer surface of the sensitive element; on the other hand, the movable plate is moved downwards, the rotating plate is moved downwards and contacts the fixed plate, the rotating plate moving downwards is rotated, the pressing plate is pressed, the wedge-shaped plate and the rotating plate jointly act on the top and bottom of the pressing plate, so that the pressing plate is stably pressed on the outer surface of the sensitive element, and the sensitive element is fixed.

An electronic device, comprising a component having a resistance with a negative temperature coefficient, and a temperature control means having an electrical resistance varying according to the temperature, such that the sum of the total resistance is, over a second temperature subrange greater than a setpoint temperature strictly greater than the total resistance at the setpoint temperature

A temperature sensor element is provided that can suppress the reduction reaction of a heat-sensitive body even when used in a strong reducing atmosphere for a long period of time. The temperature sensor element (1) of the present invention comprises: a heat-sensitive body (11) whose resistance changes with temperature; a first coating layer (20) that covers the periphery of the heat-sensitive body (11); a pair of lead wires (15, 15) that are connected to the heat-sensitive body (11), pass through the first coating layer (20) and are led out toward the rear end side; a second coating layer (25, 27) that covers the periphery of the pair of lead wires (15, 15) that pass through the first coating layer (20) and are led out; and a third coating layer (30) that covers the periphery of the first coating layer (20) and the second coating layer (25, 27). When the linear expansion coefficients of the lead wire (15), the second coating layer (25, 27) and the third coating layer (30) are set to α15, α25 and α30, respectively, the relationship α15<α30<α25 holds.

This method for manufacturing an electronic component unit (1) is provided with: a first step for manufacturing a base member (2); and a second step for assembling, to the base member (2), either a connector-type housing (3A) integrally and additionally molded on the base member (2) or a housing-type housing (3B) assembled so as to engage with the base member (2). When the connector-type housing (3A) is selected, the connector-type housing (3A) is additionally integrally formed on the base member (2) so as to fill the engagement portion (23) of the base member (2) and form the fitting opening (91), and when the housing-type housing (3B) is selected, after the pair of electric wires (6) and the pair of terminals (30) are connected, the connector-type housing (3A) is integrally formed on the base member (2). Then, the housing-type housing (3B) is assembled to the base member (2) in such a manner that the housing-type housing (3B) is engaged with the engagement section (23) of the base member (2) and the pair of electric wires (6) are inserted through the inside and outside of each of the pair of accommodating chambers (78).

The invention relates to a sensor comprising a ceramic substrate (1) and two metallization layers (2) applied on opposite surfaces of the ceramic substrate (1), in which the two metallization layers (2) each comprise an adhesive layer (2A) applied directly on the ceramic substrate (1) and the two metallization layers each comprise a gold layer (2B) applied directly on the ceramic substrate (1). And the gold layer is coated on the corresponding bonding layer (2A). The invention also relates to a manufacturing method for the sensor.

The purpose of the present invention is to provide a thermistor sintered body for which a desired B constant can be stably obtained even if a composition deviation occurs in an additive element. The thermistor sintered body of the present invention comprises a sintered body that comprises a Y2O3 phase and a Y(Cr),Mn)O3 phase, and a chemical composition of Cr, Mn, Ca, and Y excluding oxygen is Cr: 3 to 12 mol%, Mn: 5 to 15 mol%, Ca: 1 to 8 mol%, and Sr: 1 to 25 mol%, with the remainder comprising inevitable impurities and Y. With the thermistor sintered body of the present invention, Ca and Sr can also be dissolved in a Y(Cr,Mn)O3 phase.

The present invention relates to a PTC chip assembly assembly device and method for a pin-plug starting thermal protector, belonging to the field of starting thermal protectors. The present invention comprises a thermal protector, a cover plate, a first pin, a connecting insert, a duplex insert, a second pin, a bidirectional thyristor (TRIAC), a third reed, a second thermistor (TCR), a fourth reed, a base, and a PTC chip assembly. The PTC chip assembly comprises the second pin, the first pin, the first thermistor (TCR), a first reed, and a second reed. The thermal protector is mounted on the base, the first pin is connected to the connecting insert, the second pin is connected to the first pin, the first pin is connected to the duplex insert, the second reed, the second pin, the third reed, and the fourth reed are all connected to the bidirectional thyristor, the third reed and the fourth reed are respectively connected to the two poles of the second thermistor, and the first pin, the first reed, and the second reed are respectively connected to the two poles of the first thermistor.

To provide a lamination type resister which achieves stabilization of a resistance characteristic.SOLUTION: A lamination type resister comprises: a resister constructed by a resistance material; and two electrodes nipping the resister. In the resister which is formed in a thin shape for detecting a high-frequency current and is formed by reducing a self-inductance value, the resistance material for detecting the current is constructed by: a metal body made of a metal material such as nichrome having a conductivity; and an insulation particle made of an insulation material such as alumina. A resister formed by mixing the metal body and the insulation particle is exposed to an end surface of the lamination type resister, and contains: a particle having an insulation property; and a three-dimensional net type metal body surrounding the particle. A rate of the metal body against the resistance material is 30 vol% or more and 80 vol% or less.SELECTED DRAWING: Figure 5

To provide dielectric material and a multilayer ceramic electronic component having a high dielectric constant and excellent withstanding voltage characteristics.SOLUTION: An dielectric according to one embodiment of the invention includes: a main component represented by (Ba1-XCaX)(Ti1-y(Zr,Sn,Hf)y)O3 (wherein 0≤X≤1, 0≤y≤0.5); a first subcomponent including one or more of Y, Dy, Ho, Er, Gd, Ce, Nd, Sm, Nb, Tb, Eu, Tm, La, Lu and Yb; a second sub-component including Si and / or Al; and a third sub-component including Ba and / or Ca.SELECTED DRAWING: Figure 4

The present invention relates to a temperature sensor and a temperature sensor array. The present invention provides a temperature sensor having excellent load resistance and capable of obtaining high temperature detection accuracy. The temperature sensor has a sensor portion formed on a flexible substrate, the flexible substrate including: a first portion located at an end portion of the flexible substrate and provided with the sensor portion; and a second portion adjacent to the first portion in a direction from the end portion toward a distal position and having a maximum thickness between a first surface and a second surface facing each other. The surface of the first portion opposite to the sensor portion and the first surface of the second portion are located on the same surface. At least the first surface of the second portion forms a detection surface in contact with a temperature detection object. The total thickness of the first portion and the sensor portion is smaller than the maximum thickness of the second portion.

The invention discloses a miniature low-resistance thick-diaphragm thermistor and a resistance value adjusting method thereof, and belongs to the technical field of production of thick-diaphragm thermistors. The miniature low-resistance thick diaphragm type thermistor comprises a ceramic substrate, a thermistor layer, a first end electrode, a second end electrode, a first interdigital electrode layer, a second interdigital electrode layer and a top electrode layer, wherein the first interdigital electrode layer, the second interdigital electrode layer and the top electrode layer are made of electric conductor materials; according to the resistance value adjusting method, the resistance value of the horizontal branch and the resistance value of the vertical branch are calculated firstly, and then the resistance value of the miniature low-resistance thick-diaphragm thermistor is calculated. According to the invention, the interdigital electrode layer and the top electrode layer are connected with the thermistor layer and are used as resistance adjusting assemblies, so that the low-resistance function and the resistance adjusting function of the thick film type thermistor are greatly realized through structure adjustment, and the use amount of noble metal can be reduced, so that the cost is reduced, and the product volume is reduced; and finally, the comprehensive functions of miniaturization, low resistance, low cost and convenience in resistance value adjustment are realized at the same time.

A system includes an inverter configured to convert DC power from a battery to AC power to drive a motor, wherein the inverter includes: a power module, the power module including a thermistor assembly, the thermistor assembly including: a ceramic substrate; a thermistor element on the ceramic substrate; a protective coating disposed on the thermistor element so that the thermistor element is between the protective coating and the ceramic substrate; and a terminal electrode on the ceramic substrate, wherein an angle between a surface of the terminal electrode facing the protective coating and a surface of the protective coating facing the terminal electrode is greater than 90 degrees.

The invention relates to a flexible thermosensitive buried resistance film material, a preparation method thereof and electronic equipment, the flexible thermosensitive buried resistance film material comprises an electrode layer (1), a thermosensitive layer (3) and a flexible substrate (2) which are sequentially stacked, the thermosensitive layer (3) is formed by compounding a thermosensitive material and a conductive filler, and the conductive filler is introduced into the thermosensitive layer; and by combining the design of the flexible substrate, the material is endowed with excellent flexibility, bendability and high sensitivity. The flexible thermosensitive embedded resistance thin film material can be directly embedded in a circuit, the integration level of a device is remarkably improved, the flexible thermosensitive embedded resistance thin film material has good stability, meanwhile, the flexible thermosensitive embedded resistance thin film material is closer to a heat source, accurate temperature monitoring is achieved, and the flexible thermosensitive embedded resistance thin film material is suitable for temperature monitoring in the fields of flexible electronic devices, wearable equipment, electronic packaging and the like.

Here, a method of manufacturing a cover is provided by providing an electronically functional component, covering the electronically functional component by applying a molten polymer or a polymer precursor to the outside of the electronically functional component, or Inserting the electronically functional component into a preform comprising a polymer-forming agent, wherein the preform encloses the electronically functional component from more than one side, or Placing the electronically functional component in an injection mold and filling at least a part of the mold with a polymer-forming agent or Inserting the electronically functional component into the concave part of a cap and at least partially filling the volume between the inner concave side of the cap and the electronically functional component by a polymer-forming agent.

The application relates to a flux synthesis method of doped niobium dioxide sensitive resistance material, belonging to the field of thermosensitive electronic phase change. Specifically, the application relates to a method for reducing reaction temperature by using a flux, and the doped niobium dioxide electronic phase change material is batch-synthesized through high and low valence state niobium precursor batching and flux reaction in an inert or vacuum atmosphere to prepare powder, ceramic or thin film material. The application provides a non-uniform nucleation condition for new phase growth by introducing an alkali metal halide flux with similar lattice parameters of the synthesized material, reduces the free energy of the nucleation and growth of the new phase, greatly reduces the required reaction temperature and reaction time of the material synthesis, and can realize the batch preparation of high-purity and high-uniformity material in a controllable atmosphere. The reaction speed is fast, energy consumption is reduced, and the prepared doped niobium dioxide electronic phase change material has a chemical formula of Nb 1‑x M x O2: M is a rare earth element or a transition group metal element, and has considerable application value in the fields of high-temperature thermosensitive resistance, critical temperature coefficient thermosensitive resistance, nonvolatile storage, sensors and the like.

The application belongs to the field of polymer films, and discloses a polyvinylidene fluoride dielectric composite film and a preparation method and application thereof, which comprises the following steps: mixing N, N-dimethylformamide, polyvinylidene fluoride and calcium sulfate ion oligomer to obtain a mixed system solution; and solidifying the mixed system solution into a film to obtain the polyvinylidene fluoride dielectric composite film. In the polyvinylidene fluoride dielectric composite film added with the calcium sulfate ion oligomer, the dielectric constant of the composite film is obviously increased, and the dielectric loss is not obviously increased. The polyvinylidene fluoride dielectric composite film with dielectric multifunction is prepared to replace traditional ceramic dielectric materials, the preparation method is simple and convenient to operate, the polyvinylidene fluoride dielectric composite film is endowed with excellent dielectric performance and high-temperature resistance, and can be widely applied in the fields of pressure sensors, lithium ion batteries, automobile motors and high-temperature resistant thermistor devices.

The invention relates to the technical field of thermistor materials, in particular to a silicon carbide-based NTC thermistor material and a preparation method thereof. The NTC thermistor material based on silicon carbide is prepared from the following raw materials in percentage by mass: 0.1-0.5 wt% of a fluxing agent, namely nano zinc oxide, 0.05-0.2 wt% of a fluxing agent, namely nano yttrium oxide, 0.4-2.0 wt% of a toughening agent, namely nano zirconium oxide, 0.1-0.5 wt% of a toughening agent, namely nano titanium nitride, 0.4-2.0 wt% of a tempering agent, namely nano strontium titanate, and the balance of silicon carbide. 0.5-4.0% of nano rare earth metal carbide and the balance of silicon carbide. The NTC thermistor material has excellent high temperature resistance and high and low temperature impact resistance, the resistance deviation is lower than 0.5% after 1500 times of cyclic high and low temperature impact, and the NTC thermistor material can meet the use requirements of highly integrated circuits, IGBTs and other modules.

The invention discloses a preparation process of a glass packaged thermistor, and relates to the technical field of electronic component manufacturing. Comprising the following steps: S1, chip and lead preparation: providing a semiconductor thermistor chip with an ohmic contact electrode formed on the surface, and providing a pair of metal leads with metal coatings on the surfaces; s2, preparing a glass packaging material; s3, carrying out coating molding and drying; s4, carrying out stepped heat treatment packaging; by optimizing the borosilicate glass component, the thermal expansion coefficient of the borosilicate glass component is between the thermal expansion coefficient of chip ceramic and the thermal expansion coefficient of the metal lead, and by combining with the precisely controlled annealing process, the internal residual stress of the packaging body is greatly reduced, and the anti-cracking performance and the long-term reliability of the product under cold and hot impact are improved.

The present application provides a circuit protection device, comprising: a patch type thermistor element including a first electrode and a second electrode; a first heat dissipation terminal connected with the first electrode; a second heat dissipation terminal connected with the second electrode; and a housing protecting the thermistor element, the first heat dissipation terminal and the second heat dissipation terminal. The circuit protection device according to the present application having an SMD (Surface Mount Device) structure can be applied to an ultra-thin wall-mounted television.

A liquid level sensor can include a circuit board and a thermistor bridge supported by the circuit board comprising a first pair of thermistors and a second pair of thermistors. A heat sink can be coupled to the circuit board proximate the first pair of thermistors and not the second pair of thermistors. A power supply can be configured to provide pulses of electrical current through the thermistor bridge. A controller in communication with the thermistor bridge can be configured to receive a measurement signal from the thermistor bridge output a low product indication when the measurement signal satisfies a predetermined condition.