63results about "Thermistors" patented technology

A system includes an inverter configured to convert DC power from a battery to AC power to drive a motor, wherein the inverter includes: a power module, the power module including a thermistor assembly, the thermistor assembly including: a conductive layer including a trench; a thermistor connected to the conductive layer and disposed across the trench; and a first height control feature between the conductive layer and the thermistor.

A liquid level sensor can include a circuit board and a thermistor bridge supported by the circuit board comprising a first pair of thermistors and a second pair of thermistors. A heat sink can be coupled to the circuit board proximate the first pair of thermistors and not the second pair of thermistors. A power supply can be configured to provide pulses of electrical current through the thermistor bridge. A controller in communication with the thermistor bridge can be configured to receive a measurement signal from the thermistor bridge output a low product indication when the measurement signal satisfies a predetermined condition.

The present invention relates to a sensor comprising a ceramic substrate (1) and two metallization layers (2) applied on opposite surfaces of the ceramic substrate (1), each having an adhesion layer (2A) applied directly onto the ceramic substrate (1) and a gold layer (2B) applied on each adhesion layer (2A). Furthermore, the present invention relates to a method for manufacturing the sensor.

An electrical device is specified. According to one embodiment, an electrical device includes an electrical element including two electrodes and two wires connected to the electrodes, where each wire includes a flat region constituting a wire end, and where the flat region is configured for contacting the electrodes. The invention further relates to a method for producing an electrical device.

The invention provides a thermosensitive resistor and a manufacturing method. The thermosensitive resistor comprises a substrate, electrodes and a protective layer, the matrix is prepared from a nano-scale ceramic powder and high-molecular polymer composite material, the nano-scale ceramic powder is uniformly dispersed in a high-molecular polymer, and the high-molecular polymer is polyimide; the electrode is made of an alloy material composed of silver, palladium and rare earth elements, and the electrode is deposited on the surface of the base body through the physical vapor deposition technology. The protective layer wraps the surfaces of the base body and the electrodes, the protective layer is composed of a multi-layer composite material, and the multi-layer composite material comprises an inner layer, a middle layer and an outer layer. Compared with a traditional product, the size is greatly reduced, the development requirement for miniaturization of electronic equipment is met, meanwhile, the layering failure problem caused by thermal expansion under large-current impact is effectively prevented, and the stability of product performance is guaranteed.

The invention relates to an electronic device comprising: - a component having a resistance (R120) with a negative temperature coefficient, and - a temperature control means having an electrical resistance (R130) varying as a function of the temperature T such that the sum of the total resistance (R) is, on a second temperature subrange (302), greater than a setpoint temperature (305), strictly greater than the total resistance (R) at the setpoint temperature (305).

An electronic device, comprising a component having a resistance with a negative temperature coefficient, and a temperature control means having an electrical resistance varying according to the temperature, such that the sum of the total resistance is, over a second temperature subrange greater than a setpoint temperature strictly greater than the total resistance at the setpoint temperature

This method for manufacturing an electronic component unit (1) is provided with: a first step for manufacturing a base member (2); and a second step for assembling, to the base member (2), either a connector-type housing (3A) integrally and additionally molded on the base member (2) or a housing-type housing (3B) assembled so as to engage with the base member (2). When the connector-type housing (3A) is selected, the connector-type housing (3A) is additionally integrally formed on the base member (2) so as to fill the engagement portion (23) of the base member (2) and form the fitting opening (91), and when the housing-type housing (3B) is selected, after the pair of electric wires (6) and the pair of terminals (30) are connected, the connector-type housing (3A) is integrally formed on the base member (2). Then, the housing-type housing (3B) is assembled to the base member (2) in such a manner that the housing-type housing (3B) is engaged with the engagement section (23) of the base member (2) and the pair of electric wires (6) are inserted through the inside and outside of each of the pair of accommodating chambers (78).

To provide dielectric material and a multilayer ceramic electronic component having a high dielectric constant and excellent withstanding voltage characteristics.SOLUTION: An dielectric according to one embodiment of the invention includes: a main component represented by (Ba1-XCaX)(Ti1-y(Zr,Sn,Hf)y)O3 (wherein 0≤X≤1, 0≤y≤0.5); a first subcomponent including one or more of Y, Dy, Ho, Er, Gd, Ce, Nd, Sm, Nb, Tb, Eu, Tm, La, Lu and Yb; a second sub-component including Si and / or Al; and a third sub-component including Ba and / or Ca.SELECTED DRAWING: Figure 4

The invention discloses a miniature low-resistance thick-diaphragm thermistor and a resistance value adjusting method thereof, and belongs to the technical field of production of thick-diaphragm thermistors. The miniature low-resistance thick diaphragm type thermistor comprises a ceramic substrate, a thermistor layer, a first end electrode, a second end electrode, a first interdigital electrode layer, a second interdigital electrode layer and a top electrode layer, wherein the first interdigital electrode layer, the second interdigital electrode layer and the top electrode layer are made of electric conductor materials; according to the resistance value adjusting method, the resistance value of the horizontal branch and the resistance value of the vertical branch are calculated firstly, and then the resistance value of the miniature low-resistance thick-diaphragm thermistor is calculated. According to the invention, the interdigital electrode layer and the top electrode layer are connected with the thermistor layer and are used as resistance adjusting assemblies, so that the low-resistance function and the resistance adjusting function of the thick film type thermistor are greatly realized through structure adjustment, and the use amount of noble metal can be reduced, so that the cost is reduced, and the product volume is reduced; and finally, the comprehensive functions of miniaturization, low resistance, low cost and convenience in resistance value adjustment are realized at the same time.

A system includes an inverter configured to convert DC power from a battery to AC power to drive a motor, wherein the inverter includes: a power module, the power module including a thermistor assembly, the thermistor assembly including: a ceramic substrate; a thermistor element on the ceramic substrate; a protective coating disposed on the thermistor element so that the thermistor element is between the protective coating and the ceramic substrate; and a terminal electrode on the ceramic substrate, wherein an angle between a surface of the terminal electrode facing the protective coating and a surface of the protective coating facing the terminal electrode is greater than 90 degrees.

The application relates to a flux synthesis method of doped niobium dioxide sensitive resistance material, belonging to the field of thermosensitive electronic phase change. Specifically, the application relates to a method for reducing reaction temperature by using a flux, and the doped niobium dioxide electronic phase change material is batch-synthesized through high and low valence state niobium precursor batching and flux reaction in an inert or vacuum atmosphere to prepare powder, ceramic or thin film material. The application provides a non-uniform nucleation condition for new phase growth by introducing an alkali metal halide flux with similar lattice parameters of the synthesized material, reduces the free energy of the nucleation and growth of the new phase, greatly reduces the required reaction temperature and reaction time of the material synthesis, and can realize the batch preparation of high-purity and high-uniformity material in a controllable atmosphere. The reaction speed is fast, energy consumption is reduced, and the prepared doped niobium dioxide electronic phase change material has a chemical formula of Nb 1‑x M x O2: M is a rare earth element or a transition group metal element, and has considerable application value in the fields of high-temperature thermosensitive resistance, critical temperature coefficient thermosensitive resistance, nonvolatile storage, sensors and the like.

The invention discloses a preparation process of a glass packaged thermistor, and relates to the technical field of electronic component manufacturing. Comprising the following steps: S1, chip and lead preparation: providing a semiconductor thermistor chip with an ohmic contact electrode formed on the surface, and providing a pair of metal leads with metal coatings on the surfaces; s2, preparing a glass packaging material; s3, carrying out coating molding and drying; s4, carrying out stepped heat treatment packaging; by optimizing the borosilicate glass component, the thermal expansion coefficient of the borosilicate glass component is between the thermal expansion coefficient of chip ceramic and the thermal expansion coefficient of the metal lead, and by combining with the precisely controlled annealing process, the internal residual stress of the packaging body is greatly reduced, and the anti-cracking performance and the long-term reliability of the product under cold and hot impact are improved.

The present application provides a circuit protection device, comprising: a patch type thermistor element including a first electrode and a second electrode; a first heat dissipation terminal connected with the first electrode; a second heat dissipation terminal connected with the second electrode; and a housing protecting the thermistor element, the first heat dissipation terminal and the second heat dissipation terminal. The circuit protection device according to the present application having an SMD (Surface Mount Device) structure can be applied to an ultra-thin wall-mounted television.

A liquid level sensor can include a circuit board and a thermistor bridge supported by the circuit board comprising a first pair of thermistors and a second pair of thermistors. A heat sink can be coupled to the circuit board proximate the first pair of thermistors and not the second pair of thermistors. A power supply can be configured to provide pulses of electrical current through the thermistor bridge. A controller in communication with the thermistor bridge can be configured to receive a measurement signal from the thermistor bridge output a low product indication when the measurement signal satisfies a predetermined condition.

The invention relates to a thermal detector comprising an absorbing membrane (50) suspended above a reading substrate (10), which includes a thermistor layer (53) resting on two electrodes (51, 52). The first electrode (51) is a loop track, and the second electrode (52) has a central portion (52.1) and a radial track (52.2). Furthermore, the thermistor layer (53) has a peripheral contact area (53p) in contact with the first electrode (51) and a central contact area (53c) in contact with the central portion (52.1); the thermistor layer (53) being electrically isolated from the radial track (52.2). See Fig. 3A for abbreviations.

A battery pack comprises a battery and a flexible printed circuit board (FPC) utilized to detect a voltage and a temperature of the battery. The FPC comprises a substrate having a front surface and a back surface, a thermistor which detects a temperature of the battery, temperature detection lines and voltage detection lines. The temperature detection lines are electrically connected to a thermistor and arranged between the back surface and the battery. The voltage detection lines are arranged on the front surface so as to overlap the temperature detection lines in a case that the FPC is observed in a plane view in a transmissive manner from a back surface to a front surface.

An overcurrent protection element includes an electrode layer and a thermistor layer. The electrode layer has an upper metal layer and a lower metal layer, and the thermistor layer is disposed therebetween. The thermistor layer has a positive temperature coefficient characteristic and includes a polymer base material and a conductive filler. The conductive filler includes a metal compound dispersed in the polymer base material, thereby forming a conductive path of the thermistor layer. The metal compound is composed of a metal carbide and inevitable impurities. The metal carbide accounts for 90% or more, based on 100% of the metal carbide and the inevitable impurities.

The invention relates to the technical field of materials, in particular to a SnO2 / RGO composite heat-sensitive material as well as a preparation method and application thereof, and the preparation method comprises the step of performing one-step solvothermal reaction on reactants and a dispersing agent to prepare the SnO2 / RGO composite heat-sensitive material. According to the preparation method disclosed by the embodiment of the invention, RGO is doped into SnO2, and the introduction of RGO provides a high-mobility conductive network for the composite material, so that the linear response of the composite material as a temperature sensor is improved, the response time is shortened, and the performance of the SnO2 / RGO composite heat-sensitive material is improved.

An over-current protection device includes an electrode layer and a heat-sensitive layer. The electrode layer has a top metal layer and a bottom metal layer, and the heat-sensitive layer is laminated between them. The heat-sensitive layer exhibits a positive temperature coefficient (PTC) characteristic and includes a polymer matrix and a conductive filler. The conductive filler includes a metal compound dispersed in the polymer matrix, thereby forming an electrically conductive path in the heat-sensitive layer. The metal compound consists of a metal carbide and unavoidable impurities. The total amount of the metal carbide and unavoidable impurities is taken as 100%, and the metal carbide accounts for at least 90%.

To provide an electronic component capable of flexibly adjusting to a size change etc. of an internal ceramic element and ensuring suitable insulation properties.SOLUTION: An electronic component has: a case including an accommodation part having an opening; a ceramic element disposed in the accommodation part, having a first main surface and a second main surface facing each other, and having a first electrode part formed on the first main surface and a second electrode part formed on the second main surface; a first metal terminal having a first electrode connecting part connecting to the first electrode part, a first mounting part exposed from the accommodation part through the opening, and a first terminal arm part connecting the first electrode connecting part with the first mounting part; a second metal terminal having a second electrode connecting part connecting to the second electrode part, a second mounting part exposed from the accommodation part through the opening, and a second terminal arm part connecting the second electrode connecting part with the second mounting part; and an insulation member disposed between the first electrode part and the second terminal arm part.SELECTED DRAWING: Figure 4

To provide a method for manufacturing electronic component units that can produce electronic component units compatible with multiple specifications at low cost. [Solution] The manufacturing method for the electronic component unit 1 comprises a first step of manufacturing a base member 2, and a second step of assembling to the base member 2 a selected one of either a connector-type housing 3A which is integrally molded to the base member 2, or a case-type housing 3B which is assembled to engage with the base member 2. When the connector-type housing 3A is selected, the connector-type housing 3A is integrally molded to the base member 2 so as to fill the engaging portion 23 of the base member 2 and to form a mating opening 91. When the case-type housing 3B is selected, after connecting a pair of electric wires 6 to a pair of terminals 30, the case-type housing 3B is assembled to the base member 2 so as to engage with the engaging portion 23 of the base member 2 and so as to insert the pair of electric wires 6 into the inside and outside of each of the pair of housing chambers 78.

In one embodiment, a method includes forming a temperature measurement assembly including a plurality of thermally coupled layers of a first thermally conductive material, where an inner layer of the plurality of thermally coupled layers includes one or more voids defined therein, where each void receives a thermistor secured in the void using a second thermally conductive material, a second thermally conductive material thermally couples the thermistor to the inner layer. The method further includes positioning a temperature measurement assembly on and in thermal communication with the surface of the device, and measuring a temperature of the surface of the device using the thermistor.

The present disclosure relates to an encapsulated temperature sensor and to a method for manufacturing a temperature sensor (1) comprising the following steps: providing the temperature sensor (1) comprising the thermistor element (2) and two electrical conductor elements (3, 6) connected to the thermistor element (2), arranging the sensor head in an injection mold, encapsulating the sensor head by injection molding.

An electronic component that includes: an element body; and an insulating film covering an outer surface of the element body. The insulating film has a mix layer and a glass layer. The mix layer has a first glass and powder particles. The glass layer contains a second glass and has a smaller content percentage of the powder particles than the mix layer. The mix layer is on a side of the insulating film closer to the element body when viewed from the glass layer.

The invention provides a molten salt assisted oxygen partial pressure self-regulation intermediate valence transition group oxide preparation method, and relates to the technical field of functional materials, sensitive resistance materials and devices. According to the preparation method of the molten salt assisted oxygen partial pressure self-regulation intermediate valence transition group oxide, in a closed vacuum environment, molten alkaline earth metal halide serves as a medium, according to dissolution-precipitation balance of oxygen elements in a melt, the oxygen content of a target product in the molten salt and the oxygen partial pressure in the vacuum environment outside the melt are correlated, and the intermediate valence transition group oxide is obtained. And introducing another reaction process of which the oxygen potential is lower than that of the target reaction system into a coarse vacuum environment outside the melt, and accurately and spontaneously adjusting the oxygen partial pressure required by synthesis of the target product multi-dimensional material of the intermediate valence transition group oxides inside and outside the melt, therefore, accurate and high-yield melt internal and external intermediate valence transition group oxide target product multi-dimensional material synthesis is realized.

A microelectromechanical device includes a substrate, a dielectric layer, two conductive anchor components, a microelectromechanical structure, and at least one elastic thermistor. The dielectric layer is disposed on the substrate. The two conductive anchor components are disposed on the dielectric layer, and are spaced apart from each other along an extension direction of the substrate. One of two ends of the elastic thermistor is connected to one of the two conductive anchor components, and another one of the two ends of the elastic thermistor is connected to one of two ends of the microelectromechanical structure. Another one of the two ends of the microelectromechanical structure is connected to another one of the two conductive anchor components. The microelectromechanical structure and the substrate are spaced apart from each other by the elastic thermistor, so as to form a first predetermined gap along a height direction of the substrate.

A method for producing an electronic component unit includes a first step of producing a base member and a second step of selecting one of a connector-type housing and a case-type housing and assembling the selected housing to the base member. In a case of selecting the connector-type housing, the connector-type housing is integrally and additionally molded with the base member so as to fill an engaging portion of the base member. In a case of selecting the case-type housing, a pair of electric wires is connected to the pair of terminals, and then the case-type housing is assembled to the base member so as to engage with the engaging portion of the base member and so as to accommodate the terminals in the pair of accommodation chambers and insert the pair of electric wires inside and outside the pair of accommodation chambers.

The embodiment of the invention provides a decoration panel and a processing method thereof. The decoration panel comprises a transparent substrate, a decoration layer, a heating circuit layer, a thermistor and a heat insulation layer, wherein the decoration layer is printed on the back face of the transparent substrate through slurry and solidified to form a preset pattern, the heating circuit layer is arranged on the outer side face of the decoration layer in a stacked mode, the thermistor is welded to a preset bonding pad on the heating circuit layer, and the heat insulation layer is arranged between the decoration layer and the heating circuit layer. The heat insulation layer at least completely covers the decoration layer, the slurry is low-temperature epoxy resin type ink, and the thermistor is welded to the bonding pad through low-temperature welding flux with the melting point lower than 180 DEG C. According to the embodiment of the invention, the low-temperature welding flux is welded on the welding disc for welding the thermistor on the heating circuit layer, and the heat during welding is blocked by the heat insulation layer, so that the low-temperature welding flux can be melted at a lower temperature to realize the welding operation of the thermistor when the thermistor is welded; therefore, the bad change of the character caused by the overheat of the slurry forming the decorative layer due to the overhigh welding temperature is avoided.

The invention provides a method for improving imaging uniformity of an infrared sensor and the infrared sensor, and the method comprises the following steps: S1, forming a polyimide layer on a readout circuit wafer, and carrying out the curing; s2, performing etching in the polyimide layer to form a bridge pier channel until the electrode surface of the readout circuit wafer is exposed; s3, forming a first dielectric layer on the surface of the readout circuit wafer; s4, forming a thermistor part on the first dielectric layer; s5, removing the first dielectric layer on the surface of the electrode to expose the electrode; s6, forming a first metal layer on the surface of the readout circuit wafer; s7, forming a second dielectric layer on the surface of the readout circuit wafer; s8, performing oxygen plasma treatment on the surface of the second dielectric layer under the treatment conditions that the process temperature is 150-200 DEG C and the treatment time is 1-10 minutes; and S9, performing graphical processing on the second dielectric layer, the first metal layer and the first dielectric layer to form a bridge arm structure. According to the method, the uniformity of the key size and the morphology of the bridge arm structure is improved, and the imaging uniformity of the infrared sensor is further improved.