Apparatus and method for removal of oxide and carbon from semiconductor films in a single processing chamber

US20190019670A1Inactive Publication Date: 2019-01-17ASM IP HLDG BV
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Patent Information

Authority / Receiving Office
US · United States
Current Assignee / Owner
ASM IP HLDG BV
Publication Date
2019-01-17
Estimated Expiration
Not applicable · inactive patent

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Abstract

A system and method for removing both carbon-based contaminants and oxygen-based contaminants from a semiconductor substrate within a single process chamber is disclosed. The invention may comprise utilization of remote plasma units and multiple gas sources to perform the process within the single process chamber.
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Description

CROSS-REFERENCE TO RELATED PATENT APPLICATION

[0001] The present disclosure claims the benefit of U.S. Provisional Patent Application No. 62 / 532,248, filed on Jul. 13, 2017 and entitled “APPARATUS AND METHOD FOR REMOVAL OF OXIDE AND CARBON FROM SEMICONDUCTOR FILMS IN A SINGLE PROCESSING CHAMBER,” which is incorporated herein by reference.FIELD OF INVENTION

[0002] The present disclosure generally relates to an apparatus and a method for manufacturing electronic devices. More particularly, the disclosure relates to removal of oxide and carbon within semiconductor films formed in a processing chamber.BACKGROUND OF THE DISCLOSURE

[0003] Prior to the fabrication of semiconductor device, a clean surface of a wafer or substrate is desired. Contaminates on the substrate may adversely affect mechanical and electrical properties of the semiconductor devices formed. It is desired that these contaminates be removed before particular films are deposited onto the substrate.

[0004] Contaminants that exist...

Claims

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