Method for accurately calibrating optical constant of visible light waveband of optical thin film
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A technology of optical constants and optical thin films, which is applied in the field of accurate calibration of optical constants in the visible light band of optical thin films
Inactive Publication Date: 2015-03-25
THE 3RD ACAD 8358TH RES INST OF CASC
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Embodiment 1
[0050] Accurate calibration of optical constants of silicon dioxide thin films prepared by electron beam:
[0051] 1) Si substrate with ultra-smooth surface, surface roughness ~ 0.3nm, size Φ40×0.30mm, SiO prepared by electron beam evaporation 2 film;
[0052] 2) Electron beam evaporation of SiO 2 The material of the film is high-purity ultraviolet fused silica, the purity is ≥99.995%, and the vacuum degree of the back and bottom is better than 1.0×10 -3 Pa, the substrate temperature is 200°C, the deposition rate is 0.3nm / s, the film thickness is monitored by IC5 crystal vibration, and the physical thickness is 1500nm;
[0053] 3) Use an ellipsometer to measure the reflection ellipsometric parameters Ψ(λ) and Δ(λ) of the silica film, set the measurement wavelength range to 400nm-800nm, the measurement step size to 5nm, and the incident angles to be 55° and 65° . The ellipsometer uses the VASE type variable incidence angle ellipsometer of J.A.Woollam Company of the United S...
Embodiment 2
[0059] Precise Calibration of Optical Constants of SiO2 Thin Films Prepared by Ion Beam Sputtering:
[0060] 1) Si substrate with ultra-smooth surface, surface roughness ~ 0.3nm, size Φ40×0.30mm, prepared SiO by ion beam sputtering deposition method 2 film;
[0061] 2) SiO deposited by ion beam sputtering 2 The film adopts high-purity ultraviolet fused silica target material, the purity is ≥99.995%, and the vacuum degree of the back and the bottom is better than 1.0×10 -3 P, the ion beam voltage is 1250V, the ion beam current is 600mA, the oxygen flow rate is 25sccm, and the deposition time is 1h;
[0062] 3) Use an ellipsometer to measure the reflection ellipsometric parameters Ψ(λ) and Δ(λ) of the silica film, set the measurement wavelength range to 400nm-800nm, the measurement step size to 5nm, and the incident angles to be 55° and 65° . The ellipsometer uses the VASE type variable incidence angle ellipsometer of J.A.Woollam Company of the United States. attached Fig...
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Abstract
The invention relates to the field of optical thin film spectrum test, and in particular relates to a method for accurately calibrating the optical constant of the visible light waveband of an optical thin film. Particularly, the invention provides an optical coefficient measurement method of the visible light waveband of the thin film, and particularly relates to a method for accurately calibrating the optical constant of the visible light waveband of silicon dioxide thin film material; the method is simple and convenient, and is capable of unifying the physical meaning and mathematical meaning of the constant test of the optical thin film. The method has wide application value in the aspect of accurately calibrating the optical constant of the thin film. Particularly, the invention relates to the accurate calibration of the optical constant of the thin film material; on the basis of elliptic polarization spectrum inversion optical constant, the consequences of physical models of the thin film can be arranged by an orthogonal method, the sequence of the application of the physical models of the thin film can be obtained by mathematical statistics, and finally the physical meaning and mathematical meaning of the final given optical constant calculated result are unified.
Description
technical field [0001] The invention relates to the field of spectral testing of optical thin films, in particular to a method for precise calibration of optical constants of optical thin films in the visible light band. Background technique [0002] Silicon dioxide film is an important nano-film material, which has the advantages of wide transparent area (0.15 μm ~ 8 μm), low refractive index, high hardness, low thermal expansion coefficient, electrical insulation, friction resistance, acid and alkali resistance, and corrosion resistance. It is widely used in the fields of optical thin film components, semiconductor integrated circuits, electronic devices, sensors, laser devices, chemical catalysis, biomedicine, surface modification and pharmaceutical packaging. According to different application fields, SiO 2 The preparation methods of thin films mainly adopt thermal evaporation, electron beam evaporation, ion assist, ion beam sputtering, magnetron sputtering, atomic laye...
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