Preparation method of copper-zinc-tin-germanium-selenium absorption layer film with germanium gradient

A copper, zinc, tin, germanium, selenium, and absorbing layer technology, applied in the field of new energy sources for optoelectronic materials, can solve problems such as not being able to meet the needs of thin-film batteries, and achieve the effects of improving carrier collection efficiency, improving performance, and good film quality

Pending Publication Date: 2020-10-09
YUNNAN NORMAL UNIV
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  • Preparation method of copper-zinc-tin-germanium-selenium absorption layer film with germanium gradient
  • Preparation method of copper-zinc-tin-germanium-selenium absorption layer film with germanium gradient
  • Preparation method of copper-zinc-tin-germanium-selenium absorption layer film with germanium gradient

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Embodiment 1

[0041] A method for preparing a copper-zinc-tin-germanium-selenium absorbing layer film with a germanium gradient, specifically comprising the following steps:

[0042] (1) Substrate pretreatment: Clean the soda-lime glass substrate with detergent powder and washing powder in turn, and then use acetone and alcohol to ultrasonically clean the sinking bottom. The ultrasonic time is 30 minutes, and then place the sinking bottom Soak in 0.4mol / L potassium dichromate for 8-10 hours, then use deionized water to ultrasonically clean for 30 minutes and dry the soda-lime glass with nitrogen for later use;

[0043] (2) Preparation of molybdenum layer and germanium layer: put the pretreated soda-lime glass into the magnetron sputtering system, first deposit the first molybdenum layer (back electrode layer) of 0.8 μm on the soda-lime glass, and then On the first molybdenum layer, a Ge layer is deposited by sputtering, the sputtering power of the Ge target is 25W, and the deposition time i...

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Abstract

The invention discloses a preparation method of a copper-zinc-tin-germanium-selenium absorption layer film with a germanium gradient. The preparation method specifically comprises the following stepsof: (1) carrying out substrate pretreatment; (2) preparing molybdenum layers and a germanium layer, namely, sequentially depositing a first molybdenum layer, the germanium layer and a second molybdenum layer on the pretreated substrate; (3) preparing a copper-zinc-tin-sulfur prefabricated layer; (4) preparing a copper-zinc-tin-germanium-selenium absorption layer film, specifically, carrying out heat treatment on the substrate at 210 DEG C for 30 minutes after the copper-zinc-tin-sulfur prefabricated layer is prepared in the step (3), putting the substrate and selenium powder into a selenizingfurnace, heating the mixture from room temperature to 550 DEG C at a heating rate of 20 DEG C/min, keeping the temperature for 10-13 minutes, and naturally cooling the product to room temperature to obtain the copper-zinc-tin-germanium-selenium absorption layer film with the germanium gradient. According to the preparation method provided by the invention, the concentration gradient of Ge can be formed on the back surface, an electronic barrier layer is formed, the recombination of carriers at the interface of the back surface is blocked, the carrier collection efficiency of the copper-zinc-tin-selenium-based thin film is improved, and the performance of the copper-zinc-tin-germanium-selenium absorption layer film is further improved.

Description

technical field [0001] The invention relates to the technical field of photoelectric materials and new energy sources, and more specifically relates to a method for preparing a copper-zinc-tin-germanium-selenium absorbing layer film with a germanium gradient. Background technique [0002] In the research and development of solar cells in recent decades, the development of the first generation of silicon solar cells has gradually entered a saturation period, so researchers have turned their goals to new materials and new solar cells with higher conversion efficiency and lower cost. , that is, second-generation solar cells: thin-film solar cells, such as single-junction Cu(In,Ga)Se 2 (CIGS), CdTe, and GaAs, which developed rapidly in subsequent research and achieved remarkable achievements. However, the substances used in these thin film materials include toxic heavy metal cadmium (Cd), and rare metals tellurium (Te), indium (In), gallium (Ga), etc., which limit their large-s...

Claims

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Application Information

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IPC IPC(8): H01L31/032H01L31/0216H01L31/18
CPCH01L31/0326H01L31/032H01L31/02167H01L31/18Y02P70/50
Inventor 王书荣杨帅徐信李新毓李祥王亭保
Owner YUNNAN NORMAL UNIV
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