Preparation method of electrodepositing Bi2Te3 mixed with thin-film thermoelectric material

A technology of electrodeposition and thermoelectricity, which is applied in electrolytic inorganic material coating, manufacture/processing of thermoelectric devices, etc., can solve the problems of rough appearance and difficulty in practical application of thin-film thermoelectricity materials.

Inactive Publication Date: 2009-12-30
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the appearance of thin-film thermoelectric materials prepared by these electrodeposition methods is rough and difficult to be practical

Method used

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  • Preparation method of electrodepositing Bi2Te3 mixed with thin-film thermoelectric material
  • Preparation method of electrodepositing Bi2Te3 mixed with thin-film thermoelectric material
  • Preparation method of electrodepositing Bi2Te3 mixed with thin-film thermoelectric material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Example 1: Liquid-phase electrodeposition of P-type Bi-Te-Sb thin film thermoelectric material using continuous forward and reverse symmetric dynamic potential electrodeposition

[0025] Take 10ml of analytically pure nitric acid, add 50ml of distilled water to make nitric acid aqueous solution. Then weigh 10 grams of bismuth nitrate, slowly add it into the prepared nitric acid solution, and stir continuously to dissolve it, then add 4 grams of tellurous acid and stir to dissolve it. Take another 150ml of distilled water, add 10g of tartaric acid, stir to dissolve it, and make a solution. Weigh 8 grams of antimony trioxide, slowly add it into the prepared tartaric acid solution, and stir to dissolve it. Then take 100ml of distilled water, add 10g of potassium chloride, and stir to dissolve it. Then the above solutions were mixed and slowly poured into a 1000ml volumetric flask. Add distilled water to the 1L mark to prepare an electrodeposition solution. Pour the pre...

Embodiment 2

[0028] Example 2: Liquid-phase electrodeposition of P-type Bi-Te-Sb thin film thermoelectric material using continuous forward and reverse symmetric dynamic current electrodeposition

[0029] Take 10ml of analytically pure nitric acid, add 50ml of distilled water to make nitric acid aqueous solution. Then weigh 10 grams of bismuth nitrate, slowly add it into the prepared nitric acid solution, and stir continuously to dissolve it, then add 4 grams of tellurous acid and stir to dissolve it. Take another 150ml of distilled water, add 10g of tartaric acid, stir to dissolve it, and make a solution. Weigh 8 grams of antimony trioxide, slowly add it into the prepared tartaric acid solution, and stir to dissolve it. Then take 100ml of distilled water, add 10g of potassium chloride, and stir to dissolve it. Then the above solutions were mixed and slowly poured into a 1000ml volumetric flask. Add distilled water to the 1L mark to prepare an electrodeposition solution. Pour the prepa...

Embodiment 3

[0031] Example 3: Liquid-phase electrodeposition of N-type Bi-Te-Se thin film thermoelectric material by electrodeposition with continuous positive current flow

[0032] Take 90ml of analytically pure nitric acid, add 500ml of distilled water to make nitric acid aqueous solution. Then weigh 50 grams of bismuth nitrate, slowly add it into the prepared nitric acid solution, and stir continuously to dissolve it, then add 120 grams of tellurous acid and stir to dissolve it. Weigh 10 grams of selenous acid, slowly add it to the prepared solution, and stir to dissolve it. Then weigh 50 g of sodium nitrate and add it to the solution, and stir to dissolve it. Then weigh 80 g of citric acid and add it to the solution, and stir to dissolve it. Then slowly pour the above solution into a 1000ml volumetric flask. Slowly add distilled water to the 1L mark to prepare an electrodeposition solution. Pour the prepared electrodeposition solution into the electrodeposition container.

[0033...

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Abstract

The invention relates to an electrodepositing method of electrodepositing Bi2Te3 mixed with thin-film thermoelectric material, which uses electrokinetic potential or galvanic current in an electrodepositing system. The electrokinetic potential waveform output by a power supply in the electrodepositing system is a continuous scanning potential waveform or a step scanning potential waveform; and the potential of a cathode electrode ranges from minus 1V to 1V. The galvanic current waveform output by a power supply in the electrodepositing system is a continuous scanning current waveform or a step scanning current waveform; and the current density of the cathode electrode ranges from minus 50mA / cm<2> to 100mA / cm<2>. The Bi2Te3 mixed with thin-film thermoelectric material prepared by the invention has the advantages of low manufacturing cost, good surface appearance of the material, high thermoelectricity performance and easy large-scale production. The thin-film thermoelectric material is very applicable to preparing micro-thermoelectric batteries, micro-thermoelectric cooling (heating) devices, and thermoelectric detectors.

Description

technical field [0001] The invention belongs to the field of thermoelectric materials, in particular to an electrodeposited Bi 2 Te 3 Electrodeposition method of doped thin film thermoelectric material. Background technique [0002] Today, as various high-tech, sophisticated and cutting-edge technologies continue to be miniaturized and miniaturized, the application fields of micro-thermoelectric batteries, micro-thermoelectric coolers (heaters) and thermoelectric sensors continue to expand. The preparation of micro-thermoelectric batteries, micro-thermoelectric refrigerators (heaters), and thermoelectric sensors requires the use of thin-film thermoelectric materials. Bi 2 Te 3 The doped thin film thermoelectric material is the thermoelectric material with the best thermoelectric performance in the room temperature range. Currently, liquid-phase electrodeposition of Bi 2 Te 3 The method of doping thin-film thermoelectric materials basically adopts constant current elec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D5/18C25D9/04H01L35/34
Inventor 王为李菲晖
Owner TIANJIN UNIV
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