Zeolite coating material with high intercrystalline porosity on the surface of porous silicon carbide support and its preparation
A porous silicon carbide and silicon carbide carrier technology, which is applied in catalyst activation/preparation, inorganic chemistry, molecular sieve catalysts, etc., can solve the problems of unsatisfactory supported zeolite coating, achieve good molecular diffusion performance, improve mass transfer, and load capacity. big effect
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Embodiment 1
[0035] In this example, the preparation method of the high intercrystalline porosity zeolite coating material on the surface of the foamed silicon carbide carrier:
[0036] First, the surface of the foamed silicon carbide support was modified using a colloidal zeolite seed-directing agent. Mix ethyl orthosilicate, tetrapropylammonium hydroxide, and deionized water in a molar ratio of 1:0.32:29. After the tetraethyl orthosilicate was completely hydrolyzed, the foamed silicon carbide carrier and the above solution were placed in a reaction kettle, and hydrothermally synthesized at 130° C. for 4 hours. A secondary growth solution was prepared, and ethyl orthosilicate, tetrapropylammonium hydroxide, aluminum nitrate, sodium chloride, and deionized water were mixed in a molar ratio of 1:0.15:0.013:0.22:150. The weight ratio of the foamed silicon carbide carrier to the reaction solution is 1:30, and the foamed silicon carbide carrier is fixed at 1 cm away from the bottom of the rea...
Embodiment 2
[0038] In this example, the preparation method of the high intercrystalline porosity zeolite coating material on the surface of the foamed silicon carbide carrier:
[0039] The method for modifying the surface of the foamed silicon carbide carrier with the colloidal zeolite seed crystal directing agent is the same as in Example 1. To prepare a secondary growth solution, mix ethyl orthosilicate, tetrapropylammonium hydroxide, and deionized water in a molar ratio of 1:0.15:150. The weight ratio of the foamed silicon carbide carrier to the reaction solution is 1:30, and the foamed silicon carbide carrier is fixed at 1 cm away from the bottom of the reactor with a polytetrafluoroethylene support frame; the volume of the solution is 55 milliliters, and the volume of the reactor is 100 milliliters. The temperature used for the hydrothermal reaction is 170° C., the time is 48 hours, and the pressure is the autogenous pressure generated by the vaporization of the solution. After the ...
Embodiment 3
[0041] In this example, the preparation method of the high intercrystalline porosity zeolite coating material on the surface of the honeycomb silicon carbide carrier:
[0042] The method for modifying the surface of the honeycomb silicon carbide carrier with the colloidal zeolite seed crystal directing agent is the same as in Example 1. A secondary growth solution was prepared, and ethyl orthosilicate, tetrapropylammonium hydroxide, aluminum nitrate, sodium chloride, and deionized water were mixed in a molar ratio of 1:0.15:0.0065:0.15:190. The weight ratio of the honeycomb silicon carbide carrier to the reaction solution is 1:25, and the honeycomb silicon carbide ceramics is fixed at 1 cm from the bottom of the reactor with a polytetrafluoroethylene support frame; the volume of the solution is 55 milliliters, and the volume of the reactor is 100 milliliters. The temperature used for the hydrothermal reaction is 170° C., the time is 48 hours, and the pressure is the autogenous...
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