MOCVD growth method of non-polar m-surface GaN based on gamma-surface LiAlO2 substrate

A non-polar, substrate technology, applied in the field of microelectronics, can solve the problems of poor surface morphology and poor crystal quality, and achieve the effect of improving surface morphology and crystal quality

Inactive Publication Date: 2010-12-01
XIDIAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the m-plane GaN grown by this two-step method...

Method used

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  • MOCVD growth method of non-polar m-surface GaN based on gamma-surface LiAlO2 substrate
  • MOCVD growth method of non-polar m-surface GaN based on gamma-surface LiAlO2 substrate
  • MOCVD growth method of non-polar m-surface GaN based on gamma-surface LiAlO2 substrate

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Embodiment 1

[0020] The realization steps of the present invention are as follows:

[0021] Step 1, performing heat treatment on the substrate.

[0022] γ-surface LiAlO 2 The substrate substrate is placed in the metal organic chemical vapor deposition MOCVD reaction chamber, and hydrogen gas is introduced into the reaction chamber, and the vacuum degree in the reaction chamber is less than 2×10 -2 Torr, the substrate heating temperature is 900° C., the time is 4 minutes, and the reaction chamber pressure is 40 Torr, the substrate is heat-treated.

[0023] Step 2, growing a 550°C low-temperature AlN nucleation layer.

[0024] Lower the temperature of the substrate after the heat treatment to 550°C, feed the aluminum source with a flow rate of 20 μmol / min, hydrogen gas with a flow rate of 1200 sccm and ammonia gas with a flow rate of 1500 sccm into the reaction chamber, and grow a thickness of 40 nm under the condition of maintaining a pressure of 40 Torr low temperature AlN nucleation la...

Embodiment 2

[0036] The realization steps of the present invention are as follows:

[0037] Step A, performing heat treatment on the substrate.

[0038] m-plane LiAlO 2 The substrate substrate is placed in the metal organic chemical vapor deposition MOCVD reaction chamber, and the mixed gas of hydrogen and ammonia is introduced into the reaction chamber, and the vacuum degree in the reaction chamber is less than 2×10 -2 Torr, the heating temperature of the substrate substrate is 800° C., the time is 3 minutes, and the reaction chamber pressure is 10 Torr, the substrate substrate is heat-treated.

[0039] Step B, growing a 500°C low-temperature AlN nucleation layer.

[0040]Lower the temperature of the heat-treated substrate to 500°C, feed the aluminum source with a flow rate of 10 μmol / min, hydrogen gas with a flow rate of 1200 sccm, and ammonia gas with a flow rate of 1000 sccm into the reaction chamber, and grow the thickness under the condition of maintaining a pressure of 10 Torr A ...

Embodiment 3

[0052] The realization steps of the present invention are as follows:

[0053] Step 1: performing heat treatment on the base substrate.

[0054] γ-surface LiAlO 2 The substrate substrate is placed in the metal organic chemical vapor deposition MOCVD reaction chamber, and hydrogen gas is introduced into the reaction chamber, and the vacuum degree in the reaction chamber is less than 2×10 -2 Torr, the heating temperature of the substrate substrate is 1000° C., the time is 5 minutes, and the reaction chamber pressure is 700 Torr, the substrate substrate is heat treated.

[0055] Step 2, growing a 600°C low-temperature AlN nucleation layer.

[0056] Lower the temperature of the heat-treated substrate to 600°C, feed the aluminum source with a flow rate of 120 μmol / min, hydrogen gas with a flow rate of 1200 sccm and ammonia gas with a flow rate of 10000 sccm into the reaction chamber, and grow the thickness under the condition of maintaining a pressure of 700 Torr A low temperatu...

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Abstract

The invention discloses a growth method of a non-polar m-surface GaN film based on a gamma-surface LiAlO2 substrate, which mainly solves the problem of poor quality of the conventional non-polar m-surface GaN materials. The method comprises the following processing steps: (1) putting the gamma-surface LiAlO2 substrate into an MOCVD reaction chamber, and carrying out heat treatment on the substrate; (2) growing a low-temperature AlN nucleating layer with the thickness of 30-100nm and the temperature of 500-600 DEG C on the gamma-surface LiAlO2 substrate; (3) growing a high-temperature AlN layer with the thickness of 60-200nm and the temperature of 900-1050 DEG C on the low-temperature AlN nucleating layer; (4) growing an m-surface GaN buffer layer with the thickness of 1000-5000nm and the temperature of 900-1050 DEG C on the high-temperature AlN layer; (5) taking the substrate after the growth processes out of the reaction chamber, and corroding the substrate for 1-5 minutes in the molten KOH solution to form a transverse epitaxial region; and (6) putting the corroded substrate into the MOCVD reaction chamber, and carrying out secondary growth to form a non-polar m-surface GaN epitaxial layer with the thickness of 2000-5000nm and the temperature of 1000-1100 DEG C. The invention has the advantages of few defects and smooth surfaces and can be used for manufacturing m-surface GaN-based light-emitting diodes.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a method for growing semiconductor materials, in particular to a γ-surface LiAlO 2 The metal organic compound chemical vapor deposition MOCVD growth method of the non-polar m-plane GaN semiconductor material on the substrate can be used to make non-polar GaN-based semiconductor devices. technical background [0002] III-V nitrides and their alloys such as GaN, AlN, and InN have made great progress in the fields of optoelectronics and microelectronics. These materials can work at high temperatures and in relatively harsh environments, and have broad application prospects. The hot spots, especially GaN materials have been widely used in light-emitting diodes and microwave power devices. The current conventional GaN is Al on the polar c-plane 2 o 3 The excellent performance of GaN-based devices grown on AlGaN / GaN heterojunction is mainly due to the existence of spontaneous...

Claims

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Application Information

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IPC IPC(8): H01L21/205C23C16/44C30B29/40
Inventor 郝跃许晟瑞薛军帅周小伟张进成曹艳荣蔡冒世王昊
Owner XIDIAN UNIV
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