The invention discloses a
nonlinear optical switch based on a low-temperature
phase change material structure and a preparation method thereof, the device comprises a two-dimensional multilayer
semiconductor, a
vanadium dioxide
phase change film and a substrate, and the
vanadium dioxide
phase change film has a low-temperature insulator-
metal reversible phase change characteristic. The two-dimensional multi-layer
semiconductor has intrinsic or artificially designed reversal symmetry breaking characteristics. According to the
nonlinear optical switch based on the low-temperature phase change
mass structure, dynamic regulation and control of
nonlinear optical response of a two-dimensional multi-layer
semiconductor are achieved through low-temperature phase change of the
vanadium dioxide thin film, reversible nonlinear
optical switch characteristics are presented, and meanwhile, a universal
physical model with interface
light field superposition is constructed; the nonlinear optical
signal intensity and the switching ratio of the low-temperature
phase variation structure of the two-dimensional multilayer semiconductor / VO2 in a
metal state and an insulation state are quantitatively calculated by comprehensively considering nonlinear
optical field generation of each layer in the two-dimensional multilayer semiconductor, propagation and corner superposition between
layers and multiple reflection and interference effects; and the specific structure
parameter design of the low-temperature phase-change variable-
mass-structure nonlinear
optical switch with high switching ratio and wide spectrum response is realized.