Method for enhancing antistatic ability of GaN-based light-emitting diode

A light-emitting diode, gallium nitride-based technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as poor machining performance, device failure, and high price

Active Publication Date: 2010-02-10
HC SEMITEK CORP
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  • Abstract
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Problems solved by technology

But the shortcomings are also very prominent: the machining performance is relatively poor, and the price is expensive. At present, only the US CREE company can provide high-quality SiC substrates for commercial use in the world.
Therefore, the most prevalent substrate currently used for GaN growth is sapphire Al 2 o 3 Substrate, as we all know, the lattice mismatch between GaN and its substrate

Method used

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  • Method for enhancing antistatic ability of GaN-based light-emitting diode
  • Method for enhancing antistatic ability of GaN-based light-emitting diode

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Experimental program
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Effect test

Embodiment 1

[0013] (1) Substrate 1: first anneal the sapphire substrate at a temperature of 1050°C in a pure hydrogen atmosphere, and then perform nitriding treatment;

[0014] (2) Low-temperature buffer layer 2: lower the temperature to 585°C, and grow a 20nm-thick low-temperature GaN nucleation layer;

[0015] (3) High-temperature buffer layer 3: After the growth of the low-temperature buffer layer 2 is completed, stop feeding TMGa, raise the substrate temperature by 1050° C., and perform annealing treatment on the low-temperature buffer layer 2 in situ. The annealing time is 8 minutes; after annealing , growing high-temperature undoped GaN with a thickness of 0.8 μm;

[0016] (4) After the 0.8 μm thick high-temperature undoped GaN high-temperature buffer layer 3 grows, five cycles of AlGaN / GaN (AlGaN) are grown in a pure hydrogen atmosphere. 0.2 Ga 0.8 N / GaN) superlattice structure 4, aluminum gallium nitride (Al 0.2 Ga 0.8 N) has the same thickness as gallium nitride (GaN), that i...

Embodiment 2

[0030] The difference between the epitaxial process of embodiment 2 and embodiment 1 is that aluminum gallium nitride / gallium nitride (Al x Ga 1-x N / GaN, 00.2 Ga 0.8 N) and the gallium nitride (GaN) well layer both have a thickness of 6nm. After the chip manufacturing process and ESD sampling test under the same conditions, it can resist static electricity: the human body model is 4000V.

Embodiment 3

[0032] The difference between the epitaxial process of embodiment 3 and embodiment 1 is that aluminum gallium nitride / gallium nitride (Al x Ga 1-x N / GaN, 0

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Abstract

The invention discloses a method for enhancing the antistatic ability of GaN-based light-emitting diode. The epitaxial wafer structure of the light-emitting diode sequentially comprises an underlay, alow-temperature buffer layer, an unadulterated GaN high-temperature buffer layer, an aluminum gallium nitride/ GaN superlattice structure, the unadulterated GaN high-temperature buffer layer, an N type contact layer, an N type GaN conductive layer, a light-emitting layer multiple quantum well structure MQW, a P type aluminum gallium nitride electric barrier layer, a P type GaN conductive layer and a P type contact layer in a sequence from down to up. In the invention, the aluminum gallium nitride/ GaN superlattice periodic structure is inserted in the unalloyed GaN high temperature buffer layer. The insertion of the aluminum gallium nitride/ GaN superlattice periodic structure can effectively improve crystal quality of materials, thereby enhancing the antistatic ability of the GaN-based light-emitting diode and improving the reliability and the stability of devices.

Description

technical field [0001] The invention relates to a method for growing gallium nitride GaN-based light-emitting diode (LED) epitaxial material. The method can reduce the dislocation density in the epitaxial material of the light-emitting diode, and improve the ESD antistatic ability of the light-emitting diode LED. The invention also relates to a gallium nitride (GaN)-based light-emitting LED epitaxial wafer structure. Background technique [0002] Semiconductor LED has the advantages of high efficiency, energy saving, and environmental protection. It is widely used in traffic indication, outdoor full-color display and other fields. In particular, the use of high-power LED may realize semiconductor solid-state lighting. It is expected to become a new generation of light source and enter thousands of households, causing human A revolution in the history of lighting. At present, the realization of semiconductor white light source mainly focuses on three methods, the first is r...

Claims

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Application Information

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IPC IPC(8): H01L33/00
Inventor 刘玉萍魏世祯
Owner HC SEMITEK CORP
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