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Method for enhancing antistatic ability of GaN-based light-emitting diode

A light-emitting diode, gallium nitride-based technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as poor machining performance, device failure, and high price

Active Publication Date: 2010-02-10
HC SEMITEK CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But the shortcomings are also very prominent: the machining performance is relatively poor, and the price is expensive. At present, only the US CREE company can provide high-quality SiC substrates for commercial use in the world.
Therefore, the most prevalent substrate currently used for GaN growth is sapphire Al 2 o 3 Substrate, as we all know, the lattice mismatch between GaN and its substrate sapphire is quite large, so growing GaN on sapphire is easy to cause a large number of lattice defects, and too many of these defects will cause tunnel breakdown of the p-n junction, which greatly Reducing the ESD antistatic ability of devices can easily lead to device failure, so reducing the formation of lattice defects is the most essential way to reduce chip failure rate and improve stability

Method used

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Embodiment 1

[0013] (1) Substrate 1: first anneal the sapphire substrate at a temperature of 1050°C in a pure hydrogen atmosphere, and then perform nitriding treatment;

[0014] (2) Low-temperature buffer layer 2: lower the temperature to 585°C, and grow a 20nm-thick low-temperature GaN nucleation layer;

[0015] (3) High-temperature buffer layer 3: After the growth of the low-temperature buffer layer 2 is completed, stop feeding TMGa, raise the substrate temperature by 1050° C., and perform annealing treatment on the low-temperature buffer layer 2 in situ. The annealing time is 8 minutes; after annealing , growing high-temperature undoped GaN with a thickness of 0.8 μm;

[0016] (4) After the 0.8 μm thick high-temperature undoped GaN high-temperature buffer layer 3 grows, five cycles of AlGaN / GaN (AlGaN) are grown in a pure hydrogen atmosphere. 0.2 Ga 0.8 N / GaN) superlattice structure 4, aluminum gallium nitride (Al 0.2 Ga 0.8 N) has the same thickness as gallium nitride (GaN), that i...

Embodiment 2

[0030] The difference between the epitaxial process of embodiment 2 and embodiment 1 is that aluminum gallium nitride / gallium nitride (Al x Ga 1-x N / GaN, 00.2 Ga 0.8 N) and the gallium nitride (GaN) well layer both have a thickness of 6nm. After the chip manufacturing process and ESD sampling test under the same conditions, it can resist static electricity: the human body model is 4000V.

Embodiment 3

[0032] The difference between the epitaxial process of embodiment 3 and embodiment 1 is that aluminum gallium nitride / gallium nitride (Al x Ga 1-x N / GaN, 0<x<1) The growth process of the superlattice structure 4 . The composition of aluminum in AlGaN is increased from 0.2 to 0.35, the growth pressure of AlGaN in the barrier layer is 30 Torr, and the growth pressure of GaN in the well layer is 100 Torr. After the chip manufacturing process and ESD sampling test under the same conditions, it can be anti-static: the human body model is 4000V. This process not only improves the anti-static performance of the chip, but also increases the optical output power by 10% compared with traditional chips.

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Abstract

The invention discloses a method for enhancing the antistatic ability of GaN-based light-emitting diode. The epitaxial wafer structure of the light-emitting diode sequentially comprises an underlay, alow-temperature buffer layer, an unadulterated GaN high-temperature buffer layer, an aluminum gallium nitride / GaN superlattice structure, the unadulterated GaN high-temperature buffer layer, an N type contact layer, an N type GaN conductive layer, a light-emitting layer multiple quantum well structure MQW, a P type aluminum gallium nitride electric barrier layer, a P type GaN conductive layer and a P type contact layer in a sequence from down to up. In the invention, the aluminum gallium nitride / GaN superlattice periodic structure is inserted in the unalloyed GaN high temperature buffer layer. The insertion of the aluminum gallium nitride / GaN superlattice periodic structure can effectively improve crystal quality of materials, thereby enhancing the antistatic ability of the GaN-based light-emitting diode and improving the reliability and the stability of devices.

Description

technical field [0001] The invention relates to a method for growing gallium nitride GaN-based light-emitting diode (LED) epitaxial material. The method can reduce the dislocation density in the epitaxial material of the light-emitting diode, and improve the ESD antistatic ability of the light-emitting diode LED. The invention also relates to a gallium nitride (GaN)-based light-emitting LED epitaxial wafer structure. Background technique [0002] Semiconductor LED has the advantages of high efficiency, energy saving, and environmental protection. It is widely used in traffic indication, outdoor full-color display and other fields. In particular, the use of high-power LED may realize semiconductor solid-state lighting. It is expected to become a new generation of light source and enter thousands of households, causing human A revolution in the history of lighting. At present, the realization of semiconductor white light source mainly focuses on three methods, the first is r...

Claims

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Application Information

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IPC IPC(8): H01L33/00
Inventor 刘玉萍魏世祯
Owner HC SEMITEK CORP
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