Method for enhancing antistatic ability of GaN-based light-emitting diode

Abstract

The invention discloses a method for enhancing the antistatic ability of GaN-based light-emitting diode. The epitaxial wafer structure of the light-emitting diode sequentially comprises an underlay, alow-temperature buffer layer, an unadulterated GaN high-temperature buffer layer, an aluminum gallium nitride / GaN superlattice structure, the unadulterated GaN high-temperature buffer layer, an N type contact layer, an N type GaN conductive layer, a light-emitting layer multiple quantum well structure MQW, a P type aluminum gallium nitride electric barrier layer, a P type GaN conductive layer and a P type contact layer in a sequence from down to up. In the invention, the aluminum gallium nitride / GaN superlattice periodic structure is inserted in the unalloyed GaN high temperature buffer layer. The insertion of the aluminum gallium nitride / GaN superlattice periodic structure can effectively improve crystal quality of materials, thereby enhancing the antistatic ability of the GaN-based light-emitting diode and improving the reliability and the stability of devices.

Description

technical field

[0001] The invention relates to a method for growing gallium nitride GaN-based light-emitting diode (LED) epitaxial material. The method can reduce the dislocation density in the epitaxial material of the light-emitting diode, and improve the ESD antistatic ability of the light-emitting diode LED. The invention also relates to a gallium nitride (GaN)-based light-emitting LED epitaxial wafer structure. Background technique

[0002] Semiconductor LED has the advantages of high efficiency, energy saving, and environmental protection. It is widely used in traffic indication, outdoor full-color display and other fields. In particular, the use of high-power LED may realize semiconductor solid-state lighting. It is expected to become a new generation of light source and enter thousands of households, causing human A revolution in the history of lighting. At present, the realization of semiconductor white light source mainly focuses on three methods, the first is r...

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