Insulated gate bipolar transistor with floating buried layer

Abstract

The invention provides an insulated gate bipolar transistor (IGBT) with a floating buried layer, belonging to the power semiconductor device technology field. According to the invention, based on a traditional IGBT device structure, a drift region with a first conductive type is introduced with one or more layers of continuous or incontinuous second conductive type floating buried layers, through a modulation effect of introduced space charge and additional electric field of the second conductive type floating buried layer, new electric field peak is introduced into the drift region of the first conductive type, and with a same device drift region thickness, breakdown voltage of an IGBT device is substantially raised; with certain breakdown voltage, an IGBT device drift region thickness can be substantially reduced, thus forward conduction voltage drop and shutoff time of the device are substantially reduced. Simultaneously, with an effect of introduced space charge of the floating buried layer, avalanche breakdown in device shutoff can be inhibited, and dynamic breakdown voltage and reverse direction safety operation area of the IGBT device are improved.

Description

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AI Technical Summary

Benefits of technology

This innovation relates to an improved Insulated Gate Bipolar Transistors (IGBs) that has better performance at higher voltages than previous designs due to its use of multiple layers for added electrical properties such as increased carrier concentration near the surface of the channel material. These improvements make it possible to achieve greater efficiency without increasing resistance values.

Problems solved by technology

This patented technical problem addressed by this patents relates to improving insulating gate bioparallel tunnelingtransistors (IGTBFT), particularly at very fast speeds where traditional methods are limited due to their poor reverse voltage dropping characteristics or safety concerns associated with them.

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