MOSFET (Metal Oxide Semiconductor Field Effect Transistor) integrated with trench Schottky

A trench, N-type technology, used in electrical components, diodes, electrical solid devices, etc., can solve the problems of large chip area and large loss, and achieve the effect of increasing the area and reducing the forward voltage drop.

Inactive Publication Date: 2016-09-21
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to solve the problem that the Schottky junction has a large loss when it is conducting forward conduction and requires a large chip area when it bears a large current, and proposes an integrated trench Schottky MOSFET with conductance modulation.

Method used

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  • MOSFET (Metal Oxide Semiconductor Field Effect Transistor) integrated with trench Schottky
  • MOSFET (Metal Oxide Semiconductor Field Effect Transistor) integrated with trench Schottky
  • MOSFET (Metal Oxide Semiconductor Field Effect Transistor) integrated with trench Schottky

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Embodiment Construction

[0015] The present invention is described in detail below in conjunction with accompanying drawing:

[0016] like figure 1 As shown, a kind of integrated trench Schottky MOSFET of the present invention includes a MOSFET region 11 and a Schottky region 12, and the Schottky region 12 is located between two MOSFET regions 11 in a symmetrical structure; The MOSFET region 11 and the Schottky region 12 include a drain electrode 15, an N-type heavily doped substrate 1, an N-type drift region 2, and a source metal 10 that are sequentially stacked from bottom to top; the N-type drift of the MOSFET region 11 The upper layer of the region 2 has a P-type doped region 3, the upper surface of which is in contact with the source metal 10, and the P-type doped region 3 has an N-type heavily doped region 5, a P-type heavily doped region 4 and a first trench 9, the N-type heavily doped region 5 is located between the P-type heavily doped regions 4, and the junction depth of the N-type heavily ...

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Abstract

The invention belongs to a semiconductor technology, and particularly relates to an MOSFET (Metal Oxide Semiconductor Field Effect Transistor) integrated with trench Schottky. The MOSFET integrated with the trench Schottky is characterized in that a Schottky diode formed by Schottky contact and a substrate is integrated in the MOSFET; a Schottky junction is provided with a planar Schottky junction positioned on a surface and a trench Schottky junction positioned in a body; and the area of the Schottky junction is increased under the condition of occupying the same chip area, so that higher current can be carried. A plurality of P-type heavily-doped rings are further arranged below the trench Schottky junction, and a Schottky diode is switched on at a relatively low voltage to form a conductive path when a body diode is switched on; and when the voltage is boosted to be over 0.5V, the P-type heavily-doped rings below the trench Schottky junction inject minority carriers into an N-type drift region, so that forward break-over voltage drop of the Schottky junction is reduced, and a conductivity modulation effect is achieved. Through adoption of the method, body diode break-over loss of the MOSFET can be reduced, and reverse electric leakage of the Schottky diode is reduced through the P-type heavily-doped rings at the same time.

Description

technical field [0001] The invention belongs to the field of power semiconductors, and in particular relates to a MOSFET integrating trench Schottky. Background technique [0002] Synchronous rectification in high-performance converter designs is critical for low-voltage, high-current applications because efficiency and power density can be significantly improved by replacing Schottky rectification with synchronous rectification MOSFETs. In practical applications, the power loss of synchronous rectification MOSFET is mainly composed of conduction loss, switching loss and body diode conduction loss. For example, in the power loss of the low-side power switch in the DC-DC conversion circuit, the conduction loss of the body diode still affects the overall loss of the MOSFET. With the increase of high frequency and high current requirements in power switching applications, the need to reduce power loss has received more and more attention. [0003] In order to reduce the power...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01L29/78H01L29/423H01L29/06H01L29/872
CPCH01L27/0207H01L27/0255H01L29/0603H01L29/0684H01L29/78H01L29/872H01L29/8725
Inventor 李泽宏李爽陈文梅陈哲曹晓峰李家驹罗蕾任敏
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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