Thyristor controlled by accumulation layer

Abstract

An accumulation layer controlled thyristor, which belongs to the technical field of semiconductor power devices, is characterized in that the on / off of the thyristor can be controlled by stopping electron circulation through an electron barrier of an internal electric field formed in a P bypass region and an N depletion region. When a positive voltage is applied on a gate, an accumulation layer is formed at the interface between the N depletion region (33) and a gate oxide layer (6); an electron inversion channel is formed in a P-type base region (8); and electrons pass through an N active region (9), the accumulation layer, an N layer (200), and the electron inversion channel to the an N base region (3), thereby controlling the normal operation of the device. The accumulation layer controlled thyristor as the substitute of the conventional gate controlled thyristors, such as MOS controlled thyristors, has the advantages of lower conduction voltage drop, larger saturation current density, no parasitic effect, and greatly improved safety operation area, and can overcome the disadvantages of the conventional gate-controlled thyristors, such as the deficiency of current saturation characteristic and poor turn-off capability.

Description

technical field [0001] A thyristor controlled by an accumulation layer belongs to the technical field of semiconductor power devices. Background technique [0002] In recent years, the insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, or IGBT) has been widely used due to the combination of simple driving circuit of MOSFET, high switching speed and high current density and low saturation voltage of bipolar power transistor. Wider and wider. However, the forward conduction voltage drop of the IGBT will become very large when the high voltage is applied, which is mainly due to the N - The base region is very thick, lightly doped N on the side close to the emitter - The base region cannot be effectively modulated in conductance. In the gate-controlled thyristor device, the anode has hole injection, and the cathode has electron injection, which can realize the N - The conductance modulation of the base area is sufficient, the forward voltage drop and on-st...

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