Thyristor controlled by accumulation layer
A thyristor, accumulation layer technology, applied in the direction of thyristor, electrical components, circuits, etc., can solve the problem of device turn-off capability and reliability limitations, gate-controlled thyristor has no large-scale application, device application scope limitations, etc., to achieve safe work. effect of increased area, improved turn-off capability, and low forward voltage drop
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[0043] By adopting the accumulation layer control structure of the present invention, low conduction voltage drop, high current density, and large safe working area can be obtained, better current saturation characteristics and thyristor turn-off capability can be achieved, and it can be applied to epitaxial process and thin film process manufacturing technology . With the development of semiconductor technology, more power devices with low voltage drop, high current and high reliability can be produced by adopting the invention.
[0044] A thyristor controlled by an accumulation layer, as shown in Figure 6, includes a metallized anode 1, an anode P region 2, a N - Base 3, P + Bypass region 4, metallized cathode 5, gate oxide layer 6, polysilicon gate 7, P-type base region 8, N + Source region 9, N - depletion region 33 and N + Layer 200; N - A trench insulating gate is sandwiched between the base region 3 and the metallized cathode 5, and the trench insulating gate is co...
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