The invention relates to an RC-IGBT device integrated with a lateral freewheel diode by using a junction terminal and belongs to the technical field of semiconductors. The device comprises a gate contact region 1, an emitter contact region 2, a metal field plate 3, an N-type collector contact region 4, a P-type collector contact region 4', an emitter 5, a cellular region P-type well 6, a transition region P-type well 7, a first field limiting ring 8, a second field limiting ring 9, a third field limiting ring 10, an N-type collector 11, an N-type buffer layer 12, a P-type collector 13, an N-type drift region 14, a gate oxide layer 15 and a field oxide layer 16. On the premise of ensuring relatively low turn-off loss, reverse conduction performance and relatively high blocking voltage, a negative resistance effect existing when a traditional device is conducted can be eliminated, the working stability and the current conduction capability of the device are improved, and meanwhile, the manufacturing cost can be reduced.