The invention relates to an IGBT device with a groove gate type
JFET structure, belonging to the technical field of power
semiconductor devices. A
JFET region equivalent to a
JFET variable resistanceis introduced into a neutral region other than a
depletion region generated in a forward block
body region of the device, The holes are stored when the device is turned on forward, and a quick discharging loop is provided for the holes when the device is blocked forward, so that the saturation conduction
voltage drop and the shutdown loss of the device are reduced, the short-
circuit failure phenomenon after the device is turned off is avoided, and the shutdown ability of the device is improved. Moreover, the connection bridge between the gate structure and the JFET region can act as a field plate when the device is blocked in the forward direction, so that the surface
electric field peak value under the connection bridge can be effectively reduced, and the withstand
voltage and the workingreliability of the device can be improved. The manufacturing method of the IGBT device with a groove gate type JFET structure is compatible with that of the prior art. A JFET region is fabricated bya shallow groove
etching and
ion implantation process, which is conducive to reducing the
gate resistance of the JFET region and enhancing the
gate control ability of the JFET structure; it is helpfulto reduce the size of the JFET structure, increase
cell density and realize industrial production.