Fully-controlled semiconductor device packaging structure based on integrated commutation

A technology of device packaging and packaging structure, which is applied in the direction of semiconductor devices, electrical components, pulse technology, etc., can solve the problems of extreme working performance and reliability of devices, cost burden and requirements of overall circuit breaker equipment, and achieve high integration , small size, and small stray parameters
CN112019198AActive Publication Date: 2020-12-01XI AN JIAOTONG UNIV
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
XI AN JIAOTONG UNIV
Publication Date
2020-12-01

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Abstract

The invention discloses a fully-controlled semiconductor device packaging structure based on integrated commutation. The fully-controlled semiconductor device packaging structure comprises a fully-controlled semiconductor device and a tube shell used for packaging the full-control type semiconductor device, the fully-controlled semiconductor device comprises a first chip assembly, a second chip assembly, a third chip assembly, a first transition layer, a second transition layer, a third transition layer and a fourth transition layer, the cathode terminal of the first chip assembly is connectedto the anode of the fully-controlled semiconductor device through the first transition layer; the anode terminal of the first chip assembly is connected to the cathode terminal of the second chip assembly through the second transition layer; the anode terminal of the second chip assembly is connected to the anode terminal of the third chip assembly through the third transition layer; the cathodeterminal of the third chip assembly is connected to the cathode of the fully-controlled semiconductor device through the fourth transition layer; and the first transition layer is connected with the third transition layer through a conductive plate.
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Description

technical field

[0001] The disclosure belongs to the technical field of electrical equipment, and in particular relates to a fully-controlled semiconductor device packaging structure based on integrated commutation. Background technique

[0002] With the development of high-voltage direct current transmission and direct current grid technology, the research on power electronic devices for large-capacity system interruption applications has become more and more important. However, in the current development of high-power semiconductor power electronic devices, most of them are aimed at high-voltage and high-power industrial commutation applications. In the current DC circuit breaker scheme, the power device is directly applied as a high-current breaking device, which not only has strict requirements on the ultimate performance and reliability of the device, but also brings a greater burden on the overall cost of the circuit breaker equipment. . Contents of the invention ...

Claims

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