58results about How to "Accelerated shutdown" patented technology

The invention relates to a novel MOS tube drive circuit for a switch power supply, which comprises a MOS switch tube Q2 and a driving signal input terminal. The MOS tube drive circuit is characterized in that: a drive circuit (1) is arranged at the joint of a control input terminal of the MOS switch tube Q2 and the driving signal input terminal; the drive circuit (1) is formed by connecting a quick turn-off access (11), a discharging access (12) and a surging impact prevention access (13); the quick turn-off access (11) is connected in parallel with the surging impact prevention access (13) and then spans between the control input terminal of the MOS switch tube Q2 and the driving signal input terminal; and the discharging access (12) spans between a grid and an earth terminal of the MOS switch tube Q2. The MOS tube drive circuit can accelerate the turn-off of the MOS tube, control the ascending speed of driving current of the MOS tube effectively and improve the EMC characteristic ofthe integral switch power supply, and has the advantages of simple circuit, stable and reliable performance, easy realization and low cost.

The present invention discloses a switch power source of an inverse-excitation type self-excitation converting circuit which comprises an input rectification wave filtering circuit which is connected with an alternating current source. The input rectification wave filtering circuit is connected with a switch adjusting tube and a transformer. The transformer is connected with an output rectification wave filtering circuit. The switch adjusting tube is connected with a switch state controller. A switching tube clamp absorbing circuit is connected between the switch adjusting tube and the transformer. A switching tube acceleration switching circuit and a feedback forming circuit of the voltage stabilizing control signal are connected between the switch state controller and the transformer. The switching frequency of the switch power source according to the invention is unlike to the conventional switch power source and will not ascend to a high value in light load. The switching frequency will not keep to ascent when the load is reduced to a certain degree and an intermittent operation mode is switched to. The main switch frequency is fundamentally sustained to the frequency before the transition point. The switch power source has the advantages of reduced switching loss, increased efficiency of the electric power source, improved working condition of the switch adjusting tube and increased reliability of the electric power source.

The invention discloses a hot plug circuit, an interface circuit and an electronic equipment assembly. The hot plug circuit comprises a switch module, a capacitor module, a capacitor control module and a current limiting module, wherein a first end of the switch module is a power input terminal; a second end of the switch module is a power output terminal; a third end of the switch module is connected with a second end of the capacitor module, a fourth end of the capacitor control module and a first end of the current limiting module; a first end of the capacitor module is a power output terminal; a first end of the capacitor control module is a power input terminal; a second end of the capacitor control module is a grounding terminal; a third end of the capacitor control module is an enabling terminal; and a second end of the current limiting module is a grounding terminal. By using the hot plug circuit provided by the invention, the soft start effect can be improved during electrification and quick cut-off can be realized during power failure.

The invention discloses an SiC (Silicon Carbide) MOSFET (Metal Oxide Semiconductor Field Effect Transistor) gate electrode auxiliary circuit. The SiC MOSFET gate electrode auxiliary circuit comprisesa grid source circuit and a bypass branch circuit, wherein the grid source circuit comprises a grid electrode resistor, a voltage source unit and a serial resistor, which are serially connected between a gate electrode of an SiC MOSFET and a source electrode in sequence; the voltage source unit comprises two direct-current voltage sources which are in inverse parallel; each direct-current voltagesource is connected with a control switch in series; the bypass branch circuit comprises an auxiliary capacitor and a triode unit, which are connected in series; the triode unit comprises two triodeswhich are in inverse parallel; one end of the auxiliary capacitor is one end of the bypass branch circuit and is connected onto a connection line of the gate electrode of the SiC MOSFET and the grid source circuit; collection electrodes of the two triodes are connected to the other end of the auxiliary capacitor; a base electrode of each triode is connected with an emitting electrode of each triode; the respectively connected base electrodes and emitting electrodes of the two triodes are connected to two ends of the serial resistor respectively. According to the SiC MOSFET gate electrode auxiliary circuit, serial disturbance can be inhibited and the switching-off speed of a device is ensured.

The invention discloses a circuit capable of reducing current conversion valve commutation failure. Diodes are connected in parallel reversely at the positions of bridge arm thyristors of a current conversion valve, and the diodes are reversely connected in parallel between the thyristors which are connected in series. According to the circuit, the diodes are connected in parallel reversely at the positions of the bridge arm thyristors, and parts of the thyristors are quick thyristors, and reverse voltages borne by a bridge arm and needing to be shut off are concentrated to parts of the thyristors (preferably the quick thyristors) in the commutation process. Firstly, parts of the thyristors are shut off, so that the whole bridge arm is shut off. After the bridge arm is shut off, the rest of the thyristors has enough shut off time and can be shut off smoothly. Therefore, quick shut-off of the bridge arm is realized, the total voltages, time and area needed by bridge arm shut-off are reduced, quick commutation of the current conversion valve is realized, and commutation failure is reduced. Current conversion valve commutation failure is one of the most common types of failure in high-voltage direct current transmission, and the fact that commutation failure is effectively reduced has important significance to stable and normal operation of a power system.

The present invention relates to an I type tri-level drive circuit. The I type tri-level drive circuit comprises a signal modulation circuit, a DC/DC conversion circuit, an isolated transmission circuit, a signal demodulation circuit, a drive circuit, and an overvoltage protection circuit. The I type tri-level drive circuit has the advantages of being capable of inhibiting voltage peak of a collector generated in disconnection of an insulated gate bipolar transistor (IGBT), and being capable of effectively preventing over-high gate voltage. Preferably, the I type tri-level drive circuit also can detect and process a time sequence of an input signal, so as to prevent abnormal conversion time sequence, so that a specific disconnection time sequence is not taken into consideration when a short circuit fault occurs.

The invention discloses an electric vehicle charger. The charger comprises a positive pulse generation circuit, a negative pulse generation circuit, an isolation part, a charging tube and a discharging tube, wherein the positive pulse generation circuit and the negative pulse generation circuit both adopt the 555 time base integrated circuit which is connected on the utmost back end of low voltage output of a main power supply; an output end of the positive pulse generation circuit is connected with the charging tube by the isolation part, and an output end of the negative pulse generation circuit is connected with the discharging tube; and the charging tube and the discharging tube are both connected with the storage battery to be charged. The charger of the invention has the advantages that interferences on pulse waveforms and frequency signals, caused by the multistage conversion of circuit, are avoided; due to the adoption of optical coupling isolation between positive and negative square wave pulse signals and a last stage pulse current output tube, the wear of a current output tube caused by the switchoff of the main power supply is avoided when the square wave pulse is at low level, and the output of the power supply can be quickly and clearly switched off; therefore, in practice, the invention can effectively prolong service lives of the charger and the storage battery.

The invention discloses an insulated gate bipolar transistor, and the transistor comprises an N- base region, a P+ base region, an N+ emitter region, an emitter region, a gate oxide layer, a gate electrode, an N-type buffering layer, a P+ collector region, a thin silicon dioxide layer, an N-type polycrystalline silicon region, and a collector electrode. The transistor is characterized in that the P+ base region, the N+ emitter region, the emitter region, the gate oxide layer and the gate electrode are located at one side of the N- base region; the N-type buffering layer, the P+ collector region, the thin silicon dioxide layer, the N-type polycrystalline silicon region and the collector electrode are located at the other side; the thin silicon dioxide layer and the N-type polycrystalline silicon region are sequentially stacked through the P+ collector region to form a polycrystalline silicon emitter region which does not cover the P+ collector region completely. The N-type buffering layer, the P+ collector region and the polycrystalline silicon emitter region form a quick switching polycrystalline silicon emitter NPN-type triode, thereby forming a non-balance carrier extraction quick channel during the switching-off of the transistor, and facilitating the quick switching of the transistor.

The invention discloses a shift temporary storage circuit and a display device. The shift temporary storage circuit includes cascaded multistage shift temporary storage units. Each shift temporary storage unit includes a reset module. The reset signal input end of each reset module is electrically connected with the pull-up point of the shift temporary storage unit in the following stage. When thepull-up point and the scan signal output end of the shift temporary storage unit in the current stage are reset, the pull-up signal of the pull-up point of the shift temporary storage unit in the following state is in a high-level state. The technical solution of the invention is beneficial to shortening the reset time required by the shift temporary storage circuit, and avoids display screen anomaly caused by the tailing of the scan signal.

The invention discloses a millimeter wave switch with a quarter-wavelength structure comprising a radio frequency signal input. A radio frequency signal input end is connected with input matching network; wherein the input matching network is respectively connected with a quarter-wavelength microstrip transmission line 1 and a microstrip transmission line 2, the microstrip transmission line 1 andthe microstrip transmission line 2 are respectively connected with the output matching network 1 and the output matching network 2 through the switching tube 1 and the switching tube 2, and the output matching network 1 and the output matching network 2 are respectively connected with the output end 1 and the output end 2; each switching tube is composed of at least two small-size transistors ofthe same size by adopting a reverse bias structure, and microstrip lines which are equal in length and adjustable are connected between emitting electrodes of the transistors of the same switching tube. According to the invention, the large-size switching tube is equally divided into a plurality of small-size transistors, the adjustable microstrip lines with the same length are introduced betweenthe emitters of the transistors, and the isolation degree of the millimeter wave switch with the quarter-wavelength structure can be greatly improved by optimizing the lengths of the adjustable microstrip lines.

Provided is a light receiving circuit, comprising four operational amplifiers, eight coupling resistors, an output triode, an auxiliary triode and a photodiode which are connected according to the scheme to respectively form a main line and an auxiliary line, wherein the main line is used for controlling the turn-on / turn-off of triodes; the auxiliary line is used for rapidly discharging the charge stored on the base electrode of the output triode. The invention provides a new light receiving circuit which has the performance of low transmission time delay; meanwhile, the light receiving circuit can reduce the delay difference between two voltage control signals through a second anti-phase amplifier, thereby optimizing output waveforms of the light receiving circuit.

The invention provides a driving protection circuit applied to a fully-controlled electric power electronic device. The protection circuit comprises a power supply VCC, a grid driving circuit, a grid resistor gearshift circuit, a Vce voltage detection protection circuit and a short circuit signal FAULT output circuit, wherein the power supply VCC is used for providing a work voltage, an input end of the grid driving circuit is connected with PWM pulses, the grid driving circuit is used for providing an output power and the PWM pulses for the electric power electronic device, the grid resistor gearshift circuit is used for making the electric power electronic device have relatively short turn-off time when the electric power electronic device is in a work state or making the electric power electronic device have the relatively long turn-off time when the electric power electronic device is in an overcurrent state, the Vce voltage detection protection circuit is used for detecting whether the electric power electronic device generates overcurrent during device conduction, and the short circuit signal FAULT output circuit is used for outputting a FAULT signal to a control end when the electric power electronic device generates overcurrent during device conduction.

The invention discloses a SiC MOSFET gate pole auxiliary circuit based on a bridge circuit. The SiC MOSFET gate pole auxiliary circuit comprises a driving loop, a negative voltage generation module and a crosstalk suppression module. The driving loop comprises a driving resistor, the negative voltage generation module is formed by connecting a capacitor and a Zener diode in parallel and then connecting the capacitor and the Zener diode with the power supply module in series, the crosstalk suppression module comprises a triode and a diode which are in anti-parallel connection and then is connected with a suppression capacitor, and a triode base is connected with an emitter and the driving resistor in parallel; a driving loop is arranged between the grid electrode and the source electrode ofeach SiC MOSFET, the negative voltage generation module is connected with the driving loop in series, and the crosstalk suppression module is connected with the driving loop in parallel. The circuitis composed of passive devices, and the structure is simple; a driving negative voltage power supply does not need to be additionally arranged, the driving negative voltage can be adjusted by a Zenerdiode, and various driving requirements can be met; and the problem of voltage spikes when series disturbance occurs is effectively solved, and device safety is ensured.

The invention discloses a method for cutting off a power supply and a device thereof, belonging to the field of an electronic circuit. The method comprises the following steps: a voltage value of a monitoring power supply is compared with reference voltage; when the voltage value of the monitoring power supply is larger than an overvoltage threshold, an interrupt signal is generated; the reference voltage comprises the overvoltage threshold; whether the monitoring power supply is cut off or not is determined according to the interrupt signal. The device comprises an interrupt generation module and a cut-off determination module. In the invention, whether the monitoring power supply is cut off or not is determined according to the interrupt signal generated during overvoltage of the monitoring power supply, and the monitoring power supply can be cut off quickly when the monitoring power supply has abnormal overvoltage, thereby improving the protection speed to the power supply.

The invention provides a photovoltaic power generation-based electric energy quality compensation controlling apparatus and a method thereof. The apparatus comprises a photoelectric conversion module, a central control module, a direct-current processing module, an alternating-current voltage transformer module, an H bridge inverter module and a bypass switch module; and the bypass switch module includes a plurality of insulated gate bipolar transistors in inverted series connection. Because the photovoltaic power generation-based electric energy quality compensation controlling apparatus does not employ a series transformer, the size of the apparatus is small and the cost is low. The insulated gate bipolar transistors (IGBT) are used for forming the bypass switch module, so that the connection and disconnection of the bypass switch module can be carried out rapidly. Therefore, above all, the provided apparatus has the advantages of fast processing speed, simple structure, and low generation cost.

The invention relates to a bidirectional electronic switch and a control method thereof, and a computer readable storage medium, which are used for enabling the bidirectional electronic switch to quickly switch energy directions. The bidirectional electronic switch comprises a main loop, a silicon controlled rectifier branch and a reverse voltage generation branch, and the silicon controlled rectifier branch is connected in parallel with the reverse voltage generation branch and then connected in series in the main loop; the silicon controlled rectifier branch is provided with a forward branchand a reverse branch which are connected in parallel, the forward branch is provided with silicon controlled rectifiers Ty1 which are connected in series in the same conduction direction, and the reverse branch is provided with silicon controlled rectifiers Ty2 which are connected in series in the opposite conduction direction; the reverse voltage generation branch is provided with an H-bridge positive and negative voltage generation circuit connected in series in the reverse voltage generation branch, the H-bridge positive and negative voltage generation circuit is provided with an energy storage capacitor C2, and a switching tube QB1, a switching tube QB2, a switching tube QB3 and a switching tube QB4 which are sequentially connected in series to form a loop; one end of the energy storage capacitor C2 is connected with a contact between the switching tube QB1 and the switching tube QB2, and the other end of the energy storage capacitor C2 is connected with a contact between the switching tube QB3 and the switching tube QB4.

The invention discloses a vehicle-mounted ECU (Electronic Control Unit) power supply input circuit. The circuit comprises a first filtering loop, a first driving circuit, a first electrostatic protection circuit, a hard turn-off circuit, a second filtering loop, a second driving circuit and a second electrostatic protection circuit, wherein the second driving circuit and the second filtering loop are sequentially connected, an output end of the second filtering loop is connected with the first driving circuit through the hard turn-off circuit, the first driving circuit is further connected with the first electrostatic protection circuit and the first filtering loop; the first filtering loop comprises an MOS tube Q1, an MOS tube Q2, a fuse F1, a common mode inductor LB1, a capacitor C2 and a capacitor C3, a drain electrode of the MOS tube Q1 is connected with an input power supply VBAT24V, and a grid electrode of the MOS tube Q1 is connected with a grid electrode of the MOS tube Q2. The circuit is advantaged in that the vehicle-mounted ECU is powered, and the anti-interference capability and power supply stability can be improved.

The present invention provides an RET IGBT device structure with a separation gate structure and a manufacturing method of the RET IGBT device structure. A P-type buried layer is introduced below an N-type charge storage layer, and an N-type buried layer is introduced at the left side of the P-type buried layer, so that the influence of the high-concentration P-type buried layer on the threshold voltage of a device is eliminated; an electron current can flow into an N-type drift region through the N-type buried layer, and the on-state characteristic of the device is not influenced. According to the present invention, a gate electrode is divided into the upper part and the lower part, the upper part serves as the grid electrode, the lower part is connected with an emitting electrode, so that the miller capacitance Cgc is reduced through the separation gate structure, and then the switching loss is reduced. Meanwhile, the thickness of an oxide layer at the bottom of a separation gate can be further improved, or the dielectric materials with high dielectric constants can be used to improve the electric field concentration at the bottom of a groove and improve the reliability of the device. When the device is turned off, the opening of a PMOS provides an additional extraction path for a hole, and the turn-off of the current is accelerated.

The invention relates to a high-voltage safety protection device of a pure electric vehicle. A power battery box of the pure electric vehicle provides driving power for a driving motor of the pure electric vehicle through an inverter circuit; the high-voltage safety protection device further comprises a turn off/on thyristor, an acceleration sensor, an analog-to-digital conversion circuit, an operational circuit and a trigger circuit; the cathode and the anode of the turn off/on thyristor are serially connected with a power storage battery unit in the power battery box, the acceleration sensoris installed on the power battery box and is connected onto the input end of the operational circuit through the analog-to-digital conversion circuit, and the output end of the operational circuit isconnected with the control electrode of the turn off/on thyristor through the trigger circuit. By the aid of the quick turn off/ on characteristics of the turn off/on thyristor, the power storage battery unit can be disconnected rapidly in the event of strong crash of a vehicle, and the safety problem caused by leakage of electricity due to damage of a power storage battery is avoided.