I type tri-level drive circuit

A drive circuit, three-level technology, applied in electrical components, electronic switches, pulse technology, etc., to achieve the effect of suppressing collector voltage spikes

Active Publication Date: 2016-06-15
深圳青铜剑技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] On the other hand, the control of the three-level inverter will bring some other problems: 1. The voltage spike generated by turning off the IGBT is usually higher

Method used

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  • I type tri-level drive circuit
  • I type tri-level drive circuit
  • I type tri-level drive circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] Such as figure 1 As shown, the I-type three-level drive circuit of this embodiment includes in turn:

[0042] A signal detection circuit 100, which detects the input signal timing of the circuit to prevent damage to the IGBT caused by the abnormal signal timing;

[0043] A signal modulation circuit (a part of 101), which modulates the signal input by the signal detection circuit into a signal that can pass through the isolation transmission device;

[0044] A DC / DC conversion circuit (a part of 101), through the signal modulation circuit, the output frequency of the conversion circuit is adjustable, and according to the power requirement of driving the IGBT, an external MOSFET can be connected to increase the output capacity;

[0045] A logic protection circuit (a part of 101), which monitors external IGBTs or internal faults in real time, and acts quickly to protect IGBTs when a fault occurs;

[0046] An isolated transmission circuit 102, which transmits the modulate...

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PUM

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Abstract

The present invention relates to an I type tri-level drive circuit. The I type tri-level drive circuit comprises a signal modulation circuit, a DC/DC conversion circuit, an isolated transmission circuit, a signal demodulation circuit, a drive circuit, and an overvoltage protection circuit. The I type tri-level drive circuit has the advantages of being capable of inhibiting voltage peak of a collector generated in disconnection of an insulated gate bipolar transistor (IGBT), and being capable of effectively preventing over-high gate voltage. Preferably, the I type tri-level drive circuit also can detect and process a time sequence of an input signal, so as to prevent abnormal conversion time sequence, so that a specific disconnection time sequence is not taken into consideration when a short circuit fault occurs.

Description

technical field [0001] The invention relates to a three-level IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) drive circuit, in particular to an I-type three-level drive circuit. Background technique [0002] With the continuous development of solar power generation, wind power generation, and UPS technology and the continuous expansion of the market, the requirements for inverter efficiency are more and more valued by manufacturers, so the three-level topology emerges as the times require. [0003] Compared with the two-level inverter, the three-level inverter has the following advantages: 1. When using IGBTs with the same voltage level, the three-level inverter can double the output voltage and power; In high-voltage applications, the three-level inverter allows the use of lower-voltage IGBT modules, which can increase the IGBT switching frequency; 3. The power side current of the three-level inverter is closer to sinusoidal than the current in ...

Claims

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Application Information

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IPC IPC(8): H03K17/567H03K17/08
CPCH03K17/08H03K17/567
Inventor 方曙东黄辉汪之涵黄志平
Owner 深圳青铜剑技术有限公司
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