Insulated gate bipolar transistor

Abstract

The invention discloses an insulated gate bipolar transistor, and the transistor comprises an N- base region, a P+ base region, an N+ emitter region, an emitter region, a gate oxide layer, a gate electrode, an N-type buffering layer, a P+ collector region, a thin silicon dioxide layer, an N-type polycrystalline silicon region, and a collector electrode. The transistor is characterized in that the P+ base region, the N+ emitter region, the emitter region, the gate oxide layer and the gate electrode are located at one side of the N- base region; the N-type buffering layer, the P+ collector region, the thin silicon dioxide layer, the N-type polycrystalline silicon region and the collector electrode are located at the other side; the thin silicon dioxide layer and the N-type polycrystalline silicon region are sequentially stacked through the P+ collector region to form a polycrystalline silicon emitter region which does not cover the P+ collector region completely. The N-type buffering layer, the P+ collector region and the polycrystalline silicon emitter region form a quick switching polycrystalline silicon emitter NPN-type triode, thereby forming a non-balance carrier extraction quick channel during the switching-off of the transistor, and facilitating the quick switching of the transistor.

Description

technical field [0001] The invention relates to the technical field of semiconductor power devices, in particular to an insulated gate bipolar transistor. Background technique [0002] Insulated Gate Bipolar Transistor (Insulated Gate Bipolar Transistor, referred to as IGBT) is a rapidly developing and widely used semiconductor power device. It can be regarded as a composite fully-controlled semiconductor power device composed of a metal oxide semiconductor field effect transistor (MOSFET) and a bipolar junction transistor (BJT). It not only has the advantages of power MOSFET voltage control, high input impedance, and simple driving circuit, but also has many advantages such as small on-resistance, high current density, and high blocking voltage of BJT. It is widely used in household appliances, new energy power generation, smart grid, power traction and other fields. [0003] As we all know, when the insulated gate bipolar transistor is forward-conducting, the collector o...

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Problems solved by technology

[0005] In order to overcome the problem that the conduction voltage of the existing traditional insulated gate bipolar transistor is reduced but the switching time is long, and the anode short-circuit type insulated gate bipolar transistor has a high switching speed but a high conduction voltage drop, it provides a Fast switching insulated gate bipolar transistor with a good compromise between on-voltage drop and switching time

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