IGBT device with a groove gate type JFET structure

Abstract

The invention relates to an IGBT device with a groove gate type JFET structure, belonging to the technical field of power semiconductor devices. A JFET region equivalent to a JFET variable resistanceis introduced into a neutral region other than a depletion region generated in a forward block body region of the device, The holes are stored when the device is turned on forward, and a quick discharging loop is provided for the holes when the device is blocked forward, so that the saturation conduction voltage drop and the shutdown loss of the device are reduced, the short-circuit failure phenomenon after the device is turned off is avoided, and the shutdown ability of the device is improved. Moreover, the connection bridge between the gate structure and the JFET region can act as a field plate when the device is blocked in the forward direction, so that the surface electric field peak value under the connection bridge can be effectively reduced, and the withstand voltage and the workingreliability of the device can be improved. The manufacturing method of the IGBT device with a groove gate type JFET structure is compatible with that of the prior art. A JFET region is fabricated bya shallow groove etching and ion implantation process, which is conducive to reducing the gate resistance of the JFET region and enhancing the gate control ability of the JFET structure; it is helpfulto reduce the size of the JFET structure, increase cell density and realize industrial production.

Description

technical field

[0001] The invention belongs to the technical field of power semiconductor devices, and in particular relates to an IGBT device with a groove gate JFET structure. Background technique

[0002] With the rapid development of rail transit, smart grid, green energy and other fields, insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) has simple gate control, high input impedance, fast switching speed, high current density, saturation voltage It has become one of the mainstream power switching devices in the field of medium and high power power electronics; at the same time, it will continue to develop in the direction of high voltage, high current, high operating temperature and high reliability. The application of IGBT devices in high-voltage applications, especially in the process of motor driving, will experience a short circuit at both ends of the device; the device will be turned on when the load is short-circuited, resulting in a sho...

Examples

Embodiment

[0029] An IGBT device with a groove gate JFET structure, such as figure 2As shown, its cellular structure includes a metal collector 7, a first conductivity type semiconductor collector region 6, a second conductivity type semiconductor buffer layer 5, a second conductivity type semiconductor drift region 4, and a metal emitter stacked sequentially from bottom to top. pole 11; the top layer of the second conductivity type semiconductor drift region 4 has a first conductivity type semiconductor body region 8, a first conductivity type semiconductor base region 2, a second conductivity type semiconductor emitter region 1 and a first gate structure; The first conductivity type semiconductor body region 8 is located in the middle region of the top layer of the second conductivity type semiconductor drift region 4; the first conductivity type semiconductor base region 2 is respectively located in the regions on both sides of the second conductivity type semiconductor drift region 4...

technical field

[0001] The invention belongs to the technical field of power semiconductor devices, and in particular relates to an IGBT device with a groove gate JFET structure. Background technique

[0002] With the rapid development of rail transit, smart grid, green energy and other fields, insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) has simple gate control, high input impedance, fast switching speed, high current density, saturation voltage It has become one of the mainstream power switching devices in the field of medium and high power power electronics; at the same time, it will continue to develop in the direction of high voltage, high current, high operating temperature and high reliability. The application of IGBT devices in high-voltage applications, especially in the process of motor driving, will experience a short circuit at both ends of the device; the device will be turned on when the load is short-circuited, resulting in a sho...

Examples

Embodiment

[0029] An IGBT device with a groove gate JFET structure, such as figure 2As shown, its cellular structure includes a metal collector 7, a first conductivity type semiconductor collector region 6, a second conductivity type semiconductor buffer layer 5, a second conductivity type semiconductor drift region 4, and a metal emitter stacked sequentially from bottom to top. pole 11; the top layer of the second conductivity type semiconductor drift region 4 has a first conductivity type semiconductor body region 8, a first conductivity type semiconductor base region 2, a second conductivity type semiconductor emitter region 1 and a first gate structure; The first conductivity type semiconductor body region 8 is located in the middle region of the top layer of the second conductivity type semiconductor drift region 4; the first conductivity type semiconductor base region 2 is respectively located in the regions on both sides of the second conductivity type semiconductor drift region 4...

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