16results about How to "Reduce work loss" patented technology

The utility model provides a kind of three-dimensional printing automatic change board receiving device, including box, multiple flap plates that can be turned into oblique parallel shape are hingedly installed in the box, placing groove is opened in the flap plate, and the flap plate of innermost side is connected with the linkage pull rope between the side wall of opposite box and adjacent flap plate, and the adjacent flap plate between oblique parallel shape is provided with the partition space for placing the printing plate loaded with part.The utility model is slid into the box by the printing plate with part, and multiple flap plates are linked to turn over by pressing linkage pull rope, and the partition space between adjacent flap plate after turning over oblique parallel shape is convenient to store another printing plate bearing part replaced, so that part is orderly stored in receiving process, reduce subsequent collation cumbersome work and time loss, effectively avoid part and printing plate to suffer damage in replacement process.

The invention provides an ultra-wideband same-side coupling transition structure based on a liquid crystal material, and relates to the field of liquid crystal devices, and strip lines in the same-side coupling transition structure are distributed on the same side of a liquid crystal layer. The coupling transition structure is composed of staggered vertical coupling strip lines which are distributed on the upper surface and the lower surface of the glass substrate and are in mirror symmetry. The designed four-port network can be used for building an equivalent circuit of a directional coupler under the condition of a non-uniform medium, transmission of signals inside and outside a glass layer of the electronic control liquid crystal element is achieved by designing a cross-layer coupling transition structure, and an ultra-wideband working frequency band and low loss are achieved.

This invention relates to the field of fire-fighting equipment, and in particular to an automatic tracking and positioning jet fire extinguishing device, comprising an automatic fire extinguishing device and a water pipe. The water pipe is vertically positioned at the top of the automatic fire extinguishing device, and a slip ring mechanism is provided between the top of the automatic fire extinguishing device housing and the water pipe. The slip ring mechanism includes a disc and a flange that fits onto the disc. A first silicone ring and a second silicone ring are fitted between the peripheral wall of the disc and the inner wall of the flange. A first electrode strip and a second electrode strip are fitted between the first and second silicone rings. This slip ring mechanism of the automatic tracking and positioning jet fire extinguishing device uses cylindrical electrode columns instead of traditional electrode contacts in the form of rollers. By controlling the gap during assembly and elastically compressing the rollers, reliable contact pressure is achieved, and sufficient conductive area is obtained. This transforms the sliding friction of traditional electrical slip rings into rolling friction, reducing working wear and extending service life.

The application is suitable for the technical field of gas heating water heater, and provides a gas heating water heater capable of automatically processing gas leakage, which comprises a water heater body, a gas cut-off valve and an explosion-proof fan; the water heater body comprises a control panel, a gas leakage alarm, a water heater controller and a water heater electromagnetic valve; the water heater electromagnetic valve is arranged on an internal gas pipe, and the gas cut-off valve is arranged on an indoor gas pipe; the control panel is electrically connected with the gas leakage alarm, the controller and the explosion-proof fan respectively, and is wirelessly connected with the gas cut-off valve; the water heater controller is electrically connected with the water heater electromagnetic valve. The application controls the gas cut-off valve in a wireless mode through the control panel, can close the indoor gas pipe when gas leakage occurs, cuts off the gas from the source, and simultaneously closes the electromagnetic valve and the gas proportional valve in the gas heating water heater through the controller, so that the gas leakage of the water heater itself pipe and the gas leakage of the indoor pipe are effectively and comprehensively terminated.

The invention discloses an inverter power unit and a control method thereof. The power unit comprises an upper bridge, the upper bridge comprises a first IGBT module and a first S C module which are connected in parallel, and a collector electrode of the first IGBT module and a drain electrode of the first S C module are connected and then connected to a positive electrode of a direct current bus; the emitting electrode of the first IGBT module is connected with the source electrode of the first Si C module and then is connected with a phase output end; the lower bridge comprises a second I-GBT module and a second S-C module which are connected in parallel, and a collector electrode of the second I-GBT module is connected with a drain electrode of the second S-C module and then connected with a phase output end; and the emitter of the second I-GBT module is connected with the source of the second S-C module and then is connected with the cathode of the direct-current bus. The above technical scheme has the characteristics of high power density and high efficiency, can effectively reduce the working loss of the power unit in a small current time region, effectively balances the loss of the IGBT and the S C in a large current time region, and achieves the maximum output current capability.

The photovoltaic device comprises a front plate, a power generation layer, a rear plate and a diode, the front plate is configured to be of a wave-shaped structure, the front plate comprises wave crest parts and wave trough parts which are alternately arranged, the power generation layer is attached to the front plate, the rear plate is attached to the surface, away from the front plate, of the power generation layer, and the diode is connected with the power generation layer in parallel. The diodes are arranged corresponding to the trough parts, and the diodes are arranged between the power generation layer and the rear plate. The front plate and the rear plate are attached to the two opposite surfaces of the power generation layer respectively, so that the protection performance of the power generation layer is improved, and the service life of the photovoltaic device is prolonged. When the power generation layer of the trough part is shielded, the internal resistance of the power generation layer is increased, and voltages at two ends of the power generation layer are increased. When the voltage exceeds the break-over voltage of the diode, the diode is unidirectionally conducted, and the conducted diode can enable the two ends of the power generation layer to be short-circuited, so that the power generation layer is prevented from losing electric energy of other equipment in a circuit, and the working loss of the photovoltaic device is reduced.

The utility model discloses an energy -conserving hydraulic system based on energy storage device, including hydraulic pump, check valve, energy storage device, pressure detection device, reversing valve device, hydraulic cylinder, first high pressure oil circuit, second high pressure oil circuit and PLC controller, the oil inlet end of hydraulic pump is connected with oil tank, the oil outlet end of hydraulic pump and the import end of check valve all are connected with first high pressure oil circuit, the export end of check valve, energy storage device and the oil inlet end of reversing valve device all are connected with second high pressure oil circuit, the output end of reversing valve device is connected with hydraulic cylinder, pressure detection device sets up in energy storage device inside. In the utility model, the energy storage device can store the oil pressure of the superfluous high pressure oil circuit, and the energy is released when necessary to compensate the pressure in the high pressure oil circuit, so that the intermittent working mode can be used to the hydraulic pump, to reduce the energy consumption and the working loss of equipment, reduce production cost.

The present application relates to the field of semiconductor device technology, and in particular to a silicon carbide MOSFET device with integrated Schottky junction and a manufacturing method, wherein the device comprises: an N-type silicon wafer; a groove located on the N-type silicon wafer, wherein a P+ injection region is provided on one side of the bottom of the groove, and an oxide layer and a deposited polysilicon layer are grown on the surface and sidewall of the groove; a split gate structure located above the oxide layer and the deposited polysilicon layer, wherein the split gate structure comprises an Active Gate and a Dummy Gate, and the two sides of the split gate structure comprise a P-Well region and an N-Source region; and a Contact region located above the P-Well region and the N-Source region. Thus, the problems in the related art that the electric field at the bottom of the groove of the trench-type power SiC MOSFET device is large, and it is easy to be broken down or injected into the interface state, or that the parasitic reverse diode is a bipolar device, and when working in reverse, there is a large diode reverse recovery current, resulting in large reverse losses, etc.

The utility model discloses a novel vertical riveting machine which structurally comprises a machine base, a machine frame is connected to the upper portion of the machine base, a controller is arranged on one side of the machine frame, a riveting machine head is further connected to the machine frame, a lower die is arranged under the riveting machine head, and an auxiliary support is further arranged on the machine base. The auxiliary support is in an n shape, the lower die is located at an opening of the auxiliary support, fixing devices are arranged on the auxiliary support, the number of the fixing devices is two, the fixing devices are located on the two sides of the auxiliary support respectively, and the auxiliary support is used for assisting work of the riveting machine head and the lower die. And the fixing device is arranged to fix the machined part, so that the machined part is prevented from shifting during machining.

The present invention relates to the technical field of vibration excitation devices, and in particular to a synchronous double-eccentric shaft vibration excitation device and a thin oil lubrication method. The device includes a base, an eccentric shaft, a first oil tank, a second oil tank, a synchronous gear, and an oil-slinging plate. The first oil tank and the second oil tank are respectively arranged at both ends of the eccentric shaft. The first oil tank is provided with a synchronous gear, and the synchronous gear causes the lubricating oil in the first oil tank to splash to lubricate the bearing; the second oil tank is provided with an oil-slinging plate, and the oil-slinging plate causes the lubricating oil in the second oil tank to splash to lubricate the bearing. The eccentric part of the eccentric shaft is outside the oil tank, and the eccentric part rotates without hindrance, and the working loss is low; compared with a single large oil tank, the use of two small oil tanks can achieve a small amount of lubricating oil to ensure sufficient lubrication effect, and can achieve a better sealing design to avoid leakage. The synchronous gear and the oil-slinging plate, in conjunction with the oil circuit design, can realize oil circuit circulation in the oil tank without external power and sufficient lubrication.

The invention provides a semiconductor device structure and a preparation method thereof. The semiconductor device structure comprises a first conductive type back surface layer, a trench gate and a deep trench field plate, wherein the first conductive type back surface layer is composed of a first conductive type buffer layer and a first conductive type follow current heavily doped region below the deep trench field plate; the trench gate penetrates through a second conductive type body region and extends into a first conductive type substrate layer; and the depth of the trench gate penetrating through the first conductive type heavily doped region is smaller than that of the deep trench field plate. The deep trench field plates in short circuit with the emitter electrode are arranged on the two sides of the trench gate, so that a large number of holes can be accumulated when the deep trench field plates are conducted, and the conduction voltage drop is reduced; meanwhile, the vertical electric field distribution is added into the deep trench field plate to optimize the compromise relation between the FRD breakdown voltage and the break-over voltage in the RC-IGBT, so that the working loss of the RC-IGBT in the follow current state is reduced; besides, carriers in a depletion layer can be rapidly extracted in a follow current state in cooperation with a deep trench field plate, so that the current released during reverse recovery is reduced, and the peak current of reverse recovery is reduced.

The present invention relates to the field of IPC B81C1 / 00, and in particular to a preparation process and application of a silicon-based microstrip circulator. The specific steps include: S1. Pre-treating a silicon wafer to obtain a first substrate; S2. Vacuum coating the first substrate to obtain a second substrate; S3. Etching the second substrate multiple times to obtain a third substrate; S4. Vacuum coating the third substrate twice to obtain a fourth substrate; S5. Debonding, laminating, welding, and cutting the fourth substrate to obtain a finished substrate; S6. Embedding magnetic materials in the substrate to obtain a silicon-based microstrip circulator; the first substrate is a disc structure with a cavity in the middle; one side of the disc structure is the welding surface of the first substrate, and the other side is the protective surface of the first substrate. The silicon-based microstrip circulator prepared by the present invention has the advantages of low working loss and wide temperature resistance, and can meet the needs of small integrated communication devices.

The present invention discloses a high-efficiency fermentation device for producing organic fertilizer, comprising a double-shaft motor fixed on a fermentation cylinder, a driving box being arranged above the double-shaft motor, a rotating assembly being arranged in the driving box, a stirring shaft passing through the side wall of the driving box being connected to the rotating assembly, and a limit position assembly being connected to the inner bottom of the driving box. In the present invention, a staff member can start the electric telescopic rod through a controller, and with the assistance of a first strong magnetic block and a second strong magnetic block, and with the assistance of a copper coil, a connecting guide, a first wire and a second wire, the rotating block can be further rotated continuously under the action of magnetic force, so that the stirring shaft can be rotated accordingly, so that when the double-shaft motor is not working, the stirring shaft can also be rotated, thereby reducing the working loss of the double-shaft motor, further reducing the energy consumption, thereby improving the resource utilization rate of the device, and indirectly improving the practicality of the device.

The present invention discloses a reciprocating transition circuit and voltage regulation method for an on-load tap changer, the circuit comprising: a first main through-current switch, a second main through-current switch, a first switch element, a second switch element, a third switch element, a fourth switch element, a first transition resistor and a second transition resistor; the second end of the first switch element, the first end of the second switch element and the first end of the first transition resistor are connected; the second end of the third switch element, the first end of the fourth switch element and the first end of the second transition resistor are connected; the second end of the first main through-current switch, the second end of the second switch element, the second end of the first transition resistor, the second end of the second main through-current switch, the second end of the fourth switch element and the second end of the second transition resistor are all used to connect to the neutral point lead-out terminal of the on-load tap changer. The present invention realizes on-load switching and voltage regulation entirely by switch elements and transition resistors; and no mechanical track-changing mechanism is required.

The application provides a semiconductor device structure and a preparation method thereof. The semiconductor device structure comprises a back layer of a first conductive type which is composed of a buffer layer of the first conductive type and a freewheeling heavy doped region of the first conductive type under the deep trench field plate, a trench gate and a deep trench field plate which penetrate a body region of a second conductive type and extend into a substrate layer of the first conductive type; and the trench gate which also penetrates the heavy doped region of the first conductive type has a depth smaller than that of the deep trench field plate. The deep trench field plate which is short-circuited with the emitter and arranged on both sides of the trench gate can accumulate a large number of holes when the deep trench field plate is turned on, so that the on-state voltage drop is reduced. Meanwhile, the deep trench field plate optimizes the compromise relationship between the FRD breakdown voltage and the on-state voltage in the RC-IGBT with a vertical electric field distribution, so that the working loss of the RC-IGBT in the freewheeling state is reduced. In addition, the deep trench field plate can quickly extract the carriers in the depletion layer in the freewheeling state, so that the current released in the reverse recovery is reduced, and the peak current in the reverse recovery is reduced.

This invention provides a rotor blade profile for a liquid ring pump, the shape of which is determined by the coordinates of an involute equation, wherein the equation is: , ; where, X The x-axis is... Y The vertical axis represents the blade profile. X , Y A segment of a curve formed by continuous changes; the radius of the outer circle of the impeller hub. D The diameter of the impeller. t Let π be the independent variable and π be the value of a circle. b This is an eccentric quantity. Its range of values ​​is... D The value range is 0.2 to 0.3 times; t The value range is 0 to 1; b The value range of is 0 to 1 times the value range of . This invention has many advantages, such as good overall performance, low working loss, high working efficiency, low vibration, low noise, and low cavitation risk.