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A High Voltage Fast Recovery Diode Structure

A recovery diode and diode technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as poor soft recovery performance and weak current turn-off capability, and achieve improved reverse recovery softness, good process compatibility, and improved The effect of area efficiency and chip withstand voltage

Active Publication Date: 2021-07-23
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to overcome the defects of poor soft recovery performance and weak current turn-off ability of double-sided terminal diodes, the present invention combines double-sided terminal diodes with local p+ doped cathode region diodes to provide a high-voltage fast recovery diode structure

Method used

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  • A High Voltage Fast Recovery Diode Structure
  • A High Voltage Fast Recovery Diode Structure
  • A High Voltage Fast Recovery Diode Structure

Examples

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Embodiment 1

[0034] In this embodiment, the high-voltage fast recovery diode, such as figure 2 As shown, the back local p+ doping region 12 is on the surface of the cathode, and the doping dose is 1×10 15 ~1×10 18 cm -2 , the width is 1-10 μm, the thickness is 1-10 μm, and the arrangement pitch is 1-10 μm. The high-voltage fast recovery diode terminals are all double-sided terminals, including a front terminal area 171 and a rear terminal area 172, respectively surrounding the anode area and the cathode area. The front terminal region 171 is arranged on the anode side of the diode, and includes one of field plates, field limiting rings, semi-insulating thin film layers, and junction terminal extension structures with laterally variable doping, or two or more of them. Combination; the back termination region 172 is arranged on the cathode side of the diode, including one of a field plate, a field limiting ring, a semi-insulating thin film layer, and a junction termination extension stru...

Embodiment 2

[0036] In this embodiment, the high-voltage fast recovery diode, such as image 3 As shown, the back local p+ doped region 12 is inside the cathode, and the doping dose is 1×10 15 ~1×10 18 cm -2 , the depth to the surface of the cathode region is 1-10 μm, the width is 1-10 μm, the thickness is 1-10 μm, and the arrangement pitch is 1-10 μm. The high-voltage fast recovery diode terminals are all double-sided terminals, including a front terminal area 171 and a rear terminal area 172, respectively surrounding the anode area and the cathode area. The front terminal region 171 is arranged on the anode side of the diode, and includes one of field plates, field limiting rings, semi-insulating thin film layers, and junction terminal extension structures with laterally variable doping, or two or more of them. Combination; the back termination region 172 is arranged on the cathode side of the diode, including one of a field plate, a field limiting ring, a semi-insulating thin film la...

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Abstract

The present invention provides a high-voltage fast recovery diode structure, specifically a double-sided termination diode with a localized p+ doped region cathode structure, including an n-drift region, an anode region, a localized p+ doped cathode region and double-sided terminations area; the double-sided terminal structure includes a front terminal area and a back terminal area, respectively surrounding the anode area and the cathode area, which can improve the area efficiency of the terminal structure; the local p+ doping area is on the surface of the back cathode area Or inside, according to different application requirements, different dopant doses, widths, depths, and arrangement periods can be used, and holes can be injected at the end of reverse recovery to suppress electric field spikes and current filamentation on the cathode side, thereby solving the problem of double-sided termination. The resulting strong punch-through effect is not conducive to the improvement of the firmness and softness of the high-voltage fast recovery diode.

Description

Technical field: [0001] The invention relates to the technical field of semiconductors, in particular to a high-voltage fast recovery diode structure. Background technique: [0002] The double-sided terminal structure has been proposed (Chinese invention patent application number: 201610685489.X), such as figure 1 As shown, the concentration of the substrate is required to be lower than the conventional situation, and the thickness of the silicon wafer is thin, in order to deplete the backside and make the backside terminal work. Although the double-sided terminal can improve the area efficiency of the terminal structure, this structure causes a strong punch-through of the electric field on the back side and increases the electric field on the cathode side, which will bring at least two hazards. 1. The remaining stored charge is quickly depleted during reverse recovery, resulting in current tripping and high voltage overshoot with very high di / dt, which may generate high el...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/861H01L29/06
CPCH01L29/0619H01L29/0684H01L29/861
Inventor 吴郁刘晨静李彭郭勇
Owner BEIJING UNIV OF TECH
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