High-performance rectifier diode replaced circuit

A rectifier diode and replacement circuit technology, which is applied in the field of high-performance rectifier diode replacement circuits, can solve the problems of high energy consumption, lower power utilization efficiency, and high forward voltage drop, and achieve reduced power loss, good application prospects, and forward voltage. The effect of low drop

Active Publication Date: 2013-01-30
CHONGQING SOUTHWEST INTEGRATED CIRCUIT DESIGN
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the forward voltage drop of the prior art SBR is relatively high, the forward voltage drop of the current technology is about 420mV, and the reverse leakage current of the device is 50uA, so both forward and reverse work will result in higher energy consumption , reducing the power utilization efficiency

Method used

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  • High-performance rectifier diode replaced circuit

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Embodiment Construction

[0018] see figure 1 , figure 2 , a high-performance rectifier diode replacement circuit, including a capacitor C, a low-voltage clock generator 1, a charge pump circuit 2, a bandgap reference circuit 3, a hysteresis comparator 4, a drive amplifier 5 and a power MOS tube Q, wherein:

[0019] The low-voltage clock generator 1 detects the voltage of AK at both ends of the rectifier diode, and generates a clock signal to drive the charge pump circuit 2;

[0020] The charge pump circuit 2 detects the voltage across the rectifier diode and stores the charge in the capacitor C after amplifying it;

[0021] The voltage stored on the capacitor C and the reference voltage output by the bandgap reference circuit 3 are respectively output to the hysteresis comparator 4 for comparison; when the voltage stored on the capacitor C is greater than the reference voltage output by the bandgap reference circuit 3, the hysteresis comparator 4 outputs Turn on the signal, and output it to the pow...

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Abstract

The invention discloses a high-performance rectifier diode replaced circuit which comprises a capacitor, a low-voltage clock generator, a charge pump circuit, a band-gap reference circuit, a hysteresis comparator, a driving amplifier and a power metal oxide semiconductor (MOS) pipe and is characterized in that the low-voltage clock generator detects voltages at two ends of a diode pipe and generates clock signals to drive the charge pump circuit; the charge pump circuit detects the voltages at two ends of the diode pipe and stores the charges in the capacitor after the charges are amplified; the voltage stored on the capacitor and the standard voltage output by the band-gap reference circuit are respectively output to the hysteresis comparator for comparison; and when the voltage stored in the capacitor is larger than the standard voltage output by the band-gap reference circuit, the hysteresis comparator outputs starting signals which are amplified by the driving amplifier and then output to the power MOS pipe to drive the power MOS pipe to be conducted. The high-performance rectifier diode replaced circuit can achieve equivalent diode working characteristics through a pulse working mode and can totally replace original selective beacon radar (SBR) devices in performance and dimension.

Description

technical field [0001] The invention relates to a rectifier diode, in particular to a high-performance rectifier diode replacement circuit. Background technique [0002] With the continuous improvement of power supply efficiency requirements in power electronic systems, especially in high-current power supplies, as a widely used core device in power rectification circuits - rectifier diodes have been rapidly developed in recent years. The goal of technological development is to continuously reduce the power loss of diodes during work. The performance of diodes is improved through changes in device materials and technological progress, from ordinary diode rectifiers initially used to Schottky secondary diodes Tube rectifier, and the latest generation of rectifier - super barrier rectifier (Super Barrier Rectifier, SBR), so that the energy consumption of the diode is getting lower and lower, so that more energy can be converted into useful work. [0003] The existing technica...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/08H02M3/07H02M7/217
Inventor 张真荣李明剑刘永光吴炎辉范麟万天才徐骅
Owner CHONGQING SOUTHWEST INTEGRATED CIRCUIT DESIGN
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