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VDMOS device

A device and channel technology, applied in the field of semiconductor power devices, can solve problems such as difficult manufacturing process, limited application, poor dynamic characteristics of body diodes, etc.

Inactive Publication Date: 2009-04-08
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

But for the CoolMOS structure, on the one hand, it is relatively difficult to manufacture the P-column and N-column, and the doping concentration must be precisely controlled; on the other hand, its inherent body diode has poor dynamic characteristics, which limits its use in hard Application of switching circuit inductive commutation

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Embodiment Construction

[0026] Taking the N-channel VDMOS device provided by the present invention as an example, the specific implementation manner of the present invention will be further described. Using the present invention to introduce a N under the P-type base region +The VDMOS structure of the first layer can obtain a lower conduction voltage drop, and achieve a better compromise between the forward conduction voltage drop and reverse recovery characteristics of the VDMOS inherent body diode, and the process is less difficult and more operable.

[0027] Introduce-N + layer VDMOS structure, such as Figure 4 As shown, including polysilicon gate 1, isolation dielectric 2, source metal 3, N + Source region 4, P-type base region 5, N - Drift zone 6, N + Layer 7, N + Substrate 8, drain metal 9.

[0028] During specific implementation, its main manufacturing steps include: (1) in N + N grown on silicon - Epitaxial layer, photolithography and phosphorus implantation, continue to grow N - Ep...

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Abstract

A VDMOS device belongs to the technical field of semiconductor power devices. A doped layer is introduced into a conventional VDMOS device; for an N-channel VDMOS device, the doped layer is an N<+> layer (7) positioned between a P-typed base region (5) and an N<-> drift region (6); for a P-channel VDMOS device, the doped layer is a P<+> layer (7') positioned between an N-typed base region (5') and a P<-> drift region (6'). Compared with the conventional VDMOS device, sectional area where the electrons flow passes through is enlarged by adding the doped layer between the base region and the drift region, thus obtaining lower conduction loss, optimizing positive conduction voltage drop and reverse recovery property of a VDMOS intrinsic diode, and reducing the reverse recovery time to a certain extent while reducing the positive conduction voltage drop. The VDMOS device also has the advantages of simple fabrication process and lower process difficulty. Compared with the conventional VDMOS devices, the VDMOS device satisfies the application requirement of power electronic systems more easily.

Description

technical field [0001] A VDMOS structure belongs to the technical field of semiconductor power devices. Background technique [0002] Power MOS field effect transistor is a new generation of power switching device developed on the basis of MOS integrated circuit technology. Vertical double-diffused metal oxide semiconductor (VDMOS) devices have a series of unique features such as high input impedance, fast switching speed, high operating frequency, voltage control, and good thermal stability. Interface circuits and power amplifiers have been widely used. [0003] VDMOS devices can obtain ideal on-resistance and switching characteristics in low-voltage applications, but as the voltage continues to rise, the on-resistance is mainly determined by N - The resistance of the drift region is determined and increases with the 2.4-2.6 power of the drain-source breakdown voltage. Therefore, it has always been a direction for the continuous development of VDMOS devices to obtain lowe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06
CPCH01L29/7802H01L29/0623
Inventor 李泽宏连延杰钱梦亮张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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