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Lateral IGBT and manufacturing method thereof

A lateral and axial technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as reducing the short-circuit safe working capability of the device, degradation of breakdown voltage, and increasing the saturation current of the device, and reduce the saturation current. , the effect of reducing the conduction voltage drop and speeding up the extraction speed

Active Publication Date: 2019-11-19
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the charge storage layer will degrade the breakdown voltage of the device, which limits the application of the device in the high-voltage field, and this will increase the saturation current of the device and reduce the short-circuit safe working ability of the device.

Method used

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  • Lateral IGBT and manufacturing method thereof
  • Lateral IGBT and manufacturing method thereof
  • Lateral IGBT and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] A lateral IGBT device embodiment, such as figure 2 As shown (the cross-sectional views along AB line, CD line and EF line are respectively shown in image 3 , Figure 4 and Figure 5 shown), comprising: a P-type semiconductor substrate 2, a substrate electrode 1 positioned on the lower surface of the P-type semiconductor substrate 2, and a buried oxide layer 3 positioned on the upper surface of the P-type semiconductor substrate 2, characterized in that the buried oxide layer A P-type base region 7, an N-type charge storage layer 16, and a superjunction N column 41 are arranged side by side on the upper surface. The width is 30-50 μm, the super junction N column 41 penetrates along the Z direction, and the doping concentration of the super junction N column 41 is 10 15 ~10 17 cm -3 ; In the P-type base region 7, there are N+ emitter regions 8 and P+ emitter regions 9 arranged side by side and mutually independent, and the junction depth between P+ emitter 9 and N+...

Embodiment 2

[0048] A lateral IGBT device embodiment, such as Figure 6 (Its cross-sectional views along AB line, CD line and EF line are as follows Figure 7 , Figure 8 and Figure 9 shown), comprising: a P-type semiconductor substrate 2, a substrate electrode 1 positioned on the lower surface of the P-type semiconductor substrate 2, and a buried oxide layer 3 positioned on the upper surface of the P-type semiconductor substrate 2, characterized in that the buried oxide layer A P-type base region 7, an N-type charge storage layer 16, and a superjunction N column 41 are arranged side by side on the upper surface. The width is 30-50 μm, the super junction N column 41 penetrates along the Z direction, and the doping concentration of the super junction N column 41 is 10 15 ~10 17 cm -3 ; In the P-type base region 7, there are arranged side by side and mutually independent N+ emitter regions 8 and P+ emitter regions 9. The region 9 runs through along the Z direction; inside the super ju...

Embodiment 3

[0050] A lateral IGBT device embodiment, such as Figure 10 (Its cross-sectional views along AB line, CD line and EF line are as follows Figure 11, Figure 12 and Figure 13 shown), on the basis of Embodiment 1, the separation gate electrode 19 is directly connected to the emitter metal 14 and the separation gate electrode 19 is surrounded by an L shape by adjusting the opening of the mask plate and steps such as photolithography, etching, and polycrystalline filling Gate electrode 11.

[0051] The direct equal potential between the separated gate electrode and the emitter metal makes the device not need additional metal wiring on the separated gate electrode, and the separated gate electrode of this shape can further reduce the gate capacitance, especially the Miller capacitance, and improve the performance of the device. switching speed, and can further shield the influence of the N-type charge storage layer on the breakdown voltage of the device.

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Abstract

The invention belongs to the technical field of power semiconductor devices and relates to a lateral IGBT and a manufacturing method thereof. A superjunction structure is introduced into the three-dimensional direction on the basis of a conventional lateral IGBT, thereby reducing the on-resistance of the device without affecting the breakdown voltage of the device. The introduced N-type charge storage layer can improve the carrier concentration distribution in the drift region in order to further reduce the on-state voltage drop of the device. The introduction of a split gate structure can effectively shield the influence of the N-type charge storage layer on the breakdown voltage of the device and reduces the gate capacitance, especially the Miller capacitance, thereby increasing the switching speed of the device. The introduction of a PMOS structure can increase the carrier extraction speed of the device in an off state, increases the turn-off speed of the device, and reduces the switching loss of the device.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and relates to a lateral IGBT device and a manufacturing method thereof. Background technique [0002] Since the invention of the insulated gate bipolar transistor (IGBT) in the 1980s, because of its combination of the working mechanism of MOSFET (insulated field effect transistor) and BJT (bipolar junction transistor), it has the easy drive and input of MOSFET. It has the advantages of low impedance and fast switching speed, and has the advantages of large on-state current, low conduction voltage, low loss and good stability of BJT. Therefore, it is widely used in various fields such as transportation, communication, household appliances and aerospace. The use of IGBT has greatly improved the performance of power electronic systems. [0003] Since the IGBT came out, how to reduce the loss of the IGBT has been the goal of people's research. The IGBT is a conductance modulat...

Claims

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Application Information

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IPC IPC(8): H01L29/739H01L29/06H01L29/423H01L21/331
CPCH01L29/0634H01L29/42356H01L29/4238H01L29/66325H01L29/7393
Inventor 张金平王康赵阳刘竞秀李泽宏张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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