Silica-based perovskite heterojunction solar cell and preparation method thereof
A silicon-based perovskite, solar cell technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of high-risk chemicals of raw materials, expensive equipment, etc., to achieve superior electrical and optical performance, full utilization, avoidance The effect of high temperature treatment process
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Embodiment 1
[0042] Such as Figure 7 As shown in , the silicon-based perovskite heterojunction solar cell provided in this embodiment, the structure of the solar cell from top to bottom is: aluminum electrode, gold conductive film, perovskite, alumina, n-type silicon wafer and Silver electrode with perovskite as CH 3 NH 3 PB 3 .
[0043] The silicon-based perovskite heterojunction solar cell is prepared as follows:
[0044] (1) RCA cleaning process is used to clean the n-type silicon wafer, and then use N 2 Blow dry the silicon wafer;
[0045] The RCA cleaning process is as follows:
[0046] ①Immerse the silicon wafer in 20wt% KOH solution for 3min, keep the solution temperature at 80°C, and then wash it with deionized water;
[0047] ②Immerse the wafer in concentrated H 2 SO 4 and H 2 o 2 (vol%=3:1) mixed solution for 30min, where H 2 o 2 The concentration was 58%, and then washed with deionized water;
[0048] ③ Then immerse in 10% HF solution for 2 minutes, and then wash ...
Embodiment 2
[0065] Such as Figure 7 As shown in , the silicon-based perovskite heterojunction solar cell provided in this embodiment, the structure of the solar cell from top to bottom is: aluminum electrode, gold conductive film, perovskite, alumina, n-type silicon wafer and Silver electrode with perovskite as CH 3 NH 3 PB 3 .
[0066] The silicon-based perovskite heterojunction solar cell is prepared as follows:
[0067] (1) RCA cleaning process is used to clean the silicon wafer, and then use N 2 Blow dry the silicon wafer;
[0068] (2) Using atomic layer deposition (ALD) technology, set the deposition temperature to 180°C, Al(TMA), N 2、H 2 The pulse time of O is: 0.1s, 10s and 0.1s, respectively, the flow rate is: 140sccm, 140sccm and 195sccm, respectively, and 30 cycles are performed to deposit 3nm Al on the surface of the silicon wafer. 2 o 3 ;
[0069] (3) Then use a resistance evaporation coating machine, set the substrate temperature to 28°C, and the vacuum degree to 5...
Embodiment 3
[0074] Such as Figure 7 As shown in , the silicon-based perovskite heterojunction solar cell provided in this embodiment, the structure of the solar cell from top to bottom is: aluminum electrode, gold conductive film, perovskite, alumina, n-type silicon wafer and Silver electrode with perovskite as CH 3 NH 3 PB 3 .
[0075] The silicon-based perovskite heterojunction solar cell is prepared as follows:
[0076] (1) RCA cleaning process is used to clean the silicon wafer, and then use N 2 Blow dry the silicon wafer;
[0077] (2) Using atomic layer deposition (ALD) technology, set the deposition temperature to 220°C, Al(TMA), N 2 、H 2 The pulse time of O is: 0.1s, 10s and 0.1s, the flow rates are: 155sccm, 155sccm and 205sccm, respectively, and 50 cycles are performed to deposit 5nm Al on the surface of the silicon wafer. 2 o 3 ;
[0078] (3) Then use a resistance evaporation coating machine, set the substrate temperature to 30°C, and the vacuum degree to 8×10 -4 Pa,...
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