The invention relates to a growth method for reducing density of micro-tubes in a large-sized high-quality SiC single crystal. A sublimation method is used in a SiC single crystal furnace to grow the SiC single crystal, the air is vacuumized to 10<-4> Pa-10<-2> Pa before growth, the growth pressure is 5-50 mbar, the temperature is 2100-2400 DEG C, the rate is 10-500 mum/h, high-purity nitrogen is introduced into a growth chamber for 2-10 hours when the crystal grows for 20-24 hours, the same nitrogen is introduced again after an interval of 20 hours, the process is periodically repeated to obtain the intermittently nitrogen-doped SiC single crystal, the obtained SiC single crystal does not have the defects of cavity, silicon drop, polytype and the like, and the density of the micro-tubes is greatly reduced. The growth method achieves the objectives of reducing the density of the micro-tubes to the lowest and even to the level of zero micro-tube.