PCT No. PCT / CA96 / 00446 Sec. 371 Date Jun. 24, 1998 Sec. 102(e) Date Jun. 24, 1998 PCT Filed Jul. 3, 1996 PCT Pub. No. WO97 / 02605 PCT Pub. Date Jan. 23, 1997A flash E2PROM
cell having source and drain regions disposed in a substrate, a channel region intermediate to the source and drain regions, a tunnel
dielectric layer overlying the channel region, a floating gate overlying the tunnel
dielectric layer, an inter-poly
dielectric layer overlying the floating gate, and a control gate overlying the inter-poly
dielectric layer. The flash E2PROM
cell further having a highly doped p+ pocket
implant covering a portion of the
cell width and adjacent to at least one of the drain and source regions. The flash E2PROM cell is comprised of two sections butted together. The portion (width-wise) that is covered by the highly doped p+ pocket
implant is referred to as a program section. The remaining portion (width-wise) not covered by the highly doped p+ pocket
implant resembles a conventional flash E2PROM cell and is referred to as a sense section. The highly doped p+ pocket implant and the n+ drain and / or source regions create a junction having narrow depletion width so that when the junction is reversed biased, an
electric field is created for generating
hot electrons for storage on the floating gate, thereby
programming the flash E2PROM cell when a high positive potential is applied to the control gate.