86results about How to "Reduce module size" patented technology

A thin film passive element includes at least one of a capacitance element having a plurality of conductive layers and a dielectric material layer and an inductance element formed of a patterned conductive layer is stacked on a circuit element-forming region of a semiconductor substrate provided with a plurality of connection pads and is connected to the circuit element of the circuit element-forming region.

An image pickup element and a micro-lens part are formed on the front surface of a semiconductor substrate; through electrodes passing through the semiconductor substrate are formed; protruding parts protruding from the front surface toward a glass lid are formed in a thickness greater than the thickness of the micro-lens part on the through electrodes; and the protruding parts are interposed between the semiconductor substrate and the glass lid.

In a method of manufacturing a thermally conductive circuit board with high heat dissipation, high conductivity and high ground-connection, a sheet-like thermally conductive resin composition containing 70 to 95 wt. % inorganic filler and 5 to 30 wt. % thermosetting resin composition, a lead frame as a wiring pattern, and an electrically conductive heat sink with a metal pole placed therein are superposed, heated and compressed, and thus are combined to form one body. Consequently, a thermally conductive circuit board with a flat surface is obtained in which a grounding pattern is grounded to the heat sink inside the insulating layer. Thus, the grounding pattern and the heat sink can be connected electrically with each other in an arbitrary position inside the insulating layer of the thermally conductive circuit board. The method provides that a part of a lead frame and heat sink are connected not only mechanically, but also electrically, and allows an associated power module size to be reduced and its density to be increased.

An electric wiring of a module for an optical apparatus includes: a first through electrode passing through the solid-state image sensor; a first rewiring layer being formed in such a way as to be re-wired to a necessary area in the rear surface of the solid-state image sensor, and being electrically connected to the first through electrode; a second rewiring layer being formed in such a way as to be re-wired to a necessary area in the rear surface of the image processing apparatus, and being electrically connected to the first rewiring layer; a second through electrode passing through the image processing apparatus and being electrically connected to the second rewiring layer; and a third rewiring layer being formed in such a way as to be re-wired to a necessary area in a front surface of the image processing apparatus, and being electrically connected to the second through electrode. The image processing apparatus includes an external connection terminal electrically connected to the third rewiring layer. With the foregoing structure, a small and light module for an optical apparatus and a production method of such module are realized without giving a constraint on the structure of the module.

A conductive paint electromagnetic interference (EMI) shield for an electronic module or device. The conductive paint is composed of metal particles suspended in a fluidic carrier. In one embodiment, the conductive paint is sprayed onto exterior surfaces of an electronic module or device from a spray gun. The sprayed conductive paint is cured to remove the fluidic carrier, leaving a metal film coated to the outside of the module or device. In one embodiment used with electronic packages in array form, grooves are cut into an encapsulation material of a module so that the shield protection includes sidewalls of the package. In another embodiment used with camera modules, masking is used to selectively shield portions of the module. In a further embodiment, the shield is electrically connected to a ground conductor of a circuit of the electronic module.

A duplexer including an FBAR band pass filter that can be easily embodied in single chip, and a method for manufacturing the same are disclosed. The duplexer of a mobile communication device includes a transmitting band pass filter, formed on an upper portion of a substrate, having at least two FBARs electrically connected to each other, a receiving band pass filter, formed on an other side of the substrate, having at least two FBARs electrically connected to each other, and a page shifter electrically connected with the transmitting band pass filter and the receiving band pass filter. Since the transmitting and receiving band pass filter and the inductor can be integrated into one chip, a duplexer with minimized size can be 10 provided in response to the request of miniaturization and lightness of various mobile communication device. Moreover, since the transmitting or receiving band pass filter according to the present invention can be embodied in a remarkable size in comparison with the conventional SAW band pass filter as well as has a low insertion loss and low power consumption. Thus, an interface design and a terminal operating programming can be easily achieved, and a region of a board with a duplexer is mounted in a mobile communication device can be remarkably reduced.

In a high-frequency module, first, second and third duplexers are aligned and mounted on a top surface of a multilayer body. The second duplexer, the frequency band of which is spaced apart from those of the first duplexer and the third duplexer, is arranged between the first duplexer and the third duplexer, the frequency bands of which are close to each other. This causes the spacing between the first and third duplexers, the frequencies of signals transmitted and received through which are close to each other, to be increased to suppress or prevent unnecessary electromagnetic field coupling between the first and third duplexers. In addition, also with the second duplexer, the frequency band of which is spaced apart from those of the first and third duplexers and which exists between the first and third duplexers, the unnecessary electromagnetic field coupling is suppressed or prevented between the first and third duplexers.

Disclosed is a terminal connecting device for an energy storage module including a busbar having a body portion formed of a plate having a predetermined length stepped at both ends, and a cell terminal mounting portion having an insert hole at each end of the body portion, and a fastening member formed of a plate to secure the busbar by a screw connection with a cell terminal through the insert hole of the busbar, the fastening member having a nut body portion with a hollow at the center and the outer periphery processed in the shape of a nut, and a nut screw portion having a screw thread formed along the inner periphery of the hollow of the nut body portion, wherein the height of the step of the body portion of the busbar corresponds to the thickness of the nut body portion of the fastening member.

The invention provides a semiconductor integrated circuit for communication control and a wireless communication system using the same realizing reduction in the size of a chip and the size of a module by enabling trimming data to be written into a nonvolatile memory without increasing the number of external terminals. A rewritable nonvolatile memory is provided in a semiconductor integrated circuit, characteristics of circuits including an electronic part are measured and trimming data for correcting variations in the characteristics is stored in the nonvolatile memory. A pin and an interface circuit such as a test pin and a JTAG interface circuit which are originally provided for the semiconductor integrated circuit also serve as an input pin and an interface circuit for sending and storing the trimming data to the nonvolatile memory.

Included are: the third frame which is electrically connected to the first intermediate frame and is arranged above the first frame; the fourth frame which is electrically connected to the second intermediate frame and is arranged above the second frame; the electric source terminal part which is provided on an extension of the first frame; the ground terminal part which is provided on an extension of the fourth frame; and the output terminal part which is provided on an extension to which the second frame and the third frame are electrically joined, wherein the third frame and the fourth frame are arranged in parallel with each other, and the electric source terminal part, the ground terminal part and the output terminal part are arranged in a manner such that induced electric voltages, which are generated in the third frame and the fourth frame, become in reverse directions with each other.

A sequencer executes instructions based on a function clock signal to perform I/O functions in a serial peripheral interface based on a source clock signal. The function clock signal has a frequency of two times the frequency of the source clock signal. A function clock generator generates the function clock signal and operatively selects the instruction to be decoded. The instruction selectively forces the frequency of the function clock signal to be equal to the frequency of the source clock signal during the duration of that function clock signal during which the predetermined instruction is decoded to execute a single instruction during the source clock signal, to advantageously repeat the execution of the instruction without consuming clock cycles.

The invention relates to a multiple frequency multi-mode RF module of digital medium frequency. In the transmitting chain, the baseband transmit message is sent to the antenna through the quadraphase modulator, variable gain amplifier, switch, power amplifier, duplexer and switch of the antenna. In the receive chain, the received signal enters the receiving front end through the switch of the antenna or duplexer and gets into the medium frequency after mixing. The frequency synthesizer outputs the signal, provides it to the quadraphase modulator, the receiving front end and the clock amplifier. The advantages of the invention lie in the following aspects: isolating or switching the transmitting and receiving signal through the duplexer or the switch of the antenna; adopting the dual-frequency quadraphase modulator and the board band matching variable gain amplifier has relatively good gain and standing wave feature; the receiving front end adopts the dual-frequency low noise mixer; that several modes use the same medium frequency filter restrains the spurious signals, reduces the load of the baseband and lowers the cost.

The present invention relates to an image sensor module including a flexible printed circuit board (FPCB) having a window; and an image sensor that is formed to have the same size as the width of the FPCB and is attached on one surface of the FPCB, the image sensor including a light receiving section, which receives light passing through the window, and a signal processing section which processes signals generated by the light receiving section.

Provided is an inverter-integrated electric compressor capable of reducing the size of an inverter accommodating section by modularizing a power circuit board and a control board and further reducing the size of an inverter device, as well as an accommodating section thereof, by improving the positional structure with respect to other electrical components. An inverter-integrated electric compressor including an inverter accommodating section provided on a periphery of a housing accommodating an inverter device includes an inverter module constructed by integrally modularizing a power circuit board and a control board, wherein attachment legs provided on both edges of at least one side surface of the inverter module protrude outward from a module main body, and the inverter module accommodates the inverter accommodating section with the attachment legs positioned in spaces at both ends of a glass-insulated terminal.

The invention discloses an optical anti-shake micro-electromechanical system (MEMS) driver. An existing optical anti-shake driver is only provided with five axes at most. The optical anti-shake MEMS driver comprises a plane three-axis driver and a vertical three-axis driver. The planar three-axis driver comprises a first frame, a driving arm and a middle fixing plate. The vertical three-axis driver comprises a moving part and a driving part. The moving part comprises a second frame, second cantilevers, a deflection disc, a spring strip, a center disc and a third contact point. One ends of thesecond cantilevers are connected with the deflection disc, and the other ends of the second cantilevers are connected with the second frame. The driving part comprises a base plate and a sector-ring-shaped electrode plate set. The sector-ring-shaped electrode plate set comprises n sector-ring-shaped electrode plates. The n sector-ring-shaped electrode plates are all fixed on the bottom plate. Thesector-ring-shaped electrode plate set is aligned with the deflection disc. According to the invention, the image sensor can move on the plane three-axis and the vertical three-axis, and the problem of image blurring caused by camera shake is solved.

A COB (Chip On Board) package type bi-directional transceiver module is disclosed to include a photosensitive member bonded to a printed circuit board by COB (Chip On Board) package and adapted for receiving a first optical signal, and a light source installed by TO-can package and adapted for transmitting a second optical signal.

An integrated structure of acoustic wave device and varactor comprises an acoustic wave device and a varactor formed on a first part and a second part of a semiconductor substrate respectively. The acoustic wave device comprises an acoustic wave device upper structure and a first part of a bottom epitaxial structure. The acoustic wave device upper structure is formed on the first part of the bottom epitaxial structure. The varactor comprises a varactor upper structure and a second part of the bottom epitaxial structure. The varactor upper structure is formed on the second part of the bottom epitaxial structure. The integrated structure of the acoustic wave device and the varactor formed on the same semiconductor substrate is capable of reducing the module size, optimizing the impedance matching, and reducing the signal loss between the varactor and the acoustic wave device.

The invention discloses a package structure made of the combination of a device carrier and a modifiable substrate. In one embodiment, a recess is formed in the device carrier and a conductive element is disposed on the substrate, wherein the substrate is disposed on the device carrier and the conductive element is located in the recess of the device carrier. The conductive pattern in the substrate is electrically connected to the device carrier and I/O terminals of the first conductive element. The invention also discloses a method for manufacturing a package structure made of the combination of a device carrier and a modifiable substrate. In one embodiment, a portion of the conductive pattern in the substrate can be modified.

The invention discloses an all-optical modulation device based on a micro-nano GaAs optical waveguide. The all-optical modulation device comprises a laser light source, an optical fiber coupler, micro-nano GaAs optical waveguide and a filter, wherein the laser light source, the optical fiber coupler, the micro-nano GaAs optical waveguide and the filter are sequentially connected with one another through optical fibers. All-optical modulation signals realized by applying the all-optical modulation device has higher modulation depth and extinction ratio, the modulation rate reaches as high as dozens of Gb/s, and important performance parameters of modulated signals such as modulation depth and extinction ratio can be flexibly controlled by a pump light intensity adjusting method, a pump light-probe beam frequency detuning method and other methods. The all-optical modulation technology realized by the invention can be used in an integrated optoelectronic technology for effectively reducing the module scale of an optical modulator and improving the modulation rate and the modulation depth.