High-voltage coil fixing device of plasma etcher

Abstract

The invention relates to a high-voltage coil fixing device of a plasma etcher. A coil skeleton of the device comprises a bottom end connecting ring, upright posts with a groove and a top end connecting ring, wherein more than three upright posts with a groove are uniformly arranged between the bottom end connecting ring and the top end connecting ring; line containing grooves are arranged on each upright post with a groove at equal intervals; the outer side of the upright posts with a groove is provided with a strip pressing plate, and a line pressing groove corresponding to a high-voltage coil is arranged on the strip pressing plate; and the strip pressing plate and the upright posts with a groove are fixedly connected into a whole by bolts. Because the coil skeleton with better rigidity and the strip pressing plate are used to fix the high-voltage coil, the high-voltage coil cannot deform and be separated from the coil skeleton so as to radically eliminate accidents of striking a quartz reaction tube because a winding of the high-voltage coil separates from the coil skeleton, thereby guaranteeing the normal service life of the quartz reaction tube, improving the use reliability of the plasma etcher and saving the production cost.

Description

Technical field: [0001] The invention relates to plasma etching equipment, in particular to a high-voltage coil fixing device for a plasma etching machine. Background technique: [0002] Solar energy is a kind of radiant energy, which must be transformed into electrical energy by means of an energy converter. This energy converter that converts solar energy into electrical energy is commonly known as a solar cell. The P-N junction is the core part of a crystalline silicon solar cell. Without a P-N junction, photocurrent cannot be generated, and a solar cell cannot be formed. Diffusion is a way for silicon wafers to make P-N junctions. However, during the diffusion process, a diffusion layer is also formed on the peripheral surface of silicon wafers. The diffusion layer on the peripheral surface of the silicon wafer will form a short circuit ring between the upper and lower electrodes of the battery and must be removed. Any small local short circuit on the periphery will r...

AI Technical Summary

Problems solved by technology

[0004] In order to overcome the shortcomings of existing plasma etching machines due to unreliable high-volt

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