Reaction chamber of dry plasma etcher

Abstract

A reaction chamber of a dry plasma etcher comprises a cylindrical reaction chamber and an upper cover covering the cylindrical reaction chamber, wherein an air inlet hole is formed in the center of the upper cover, the cylindrical reaction chamber is formed by a side wall, a bottom wall and the upper cover, a substrate to be etched is placed in the center of the bottom wall of the reaction chamber, and a substrate picking and delivering port for picking up and delivering the substrate is formed in the reaction chamber; a uniform-flow inner lining matched with the reaction chamber is arranged in the reaction chamber and comprises a cylindrical main body, a transmission hole corresponding to the substrate picking and delivering port is formed in the main body, a circle of ring-shaped baseplate extending inwards is arranged at the bottom of the main body and corresponds to the substrate to be etched in position, and uniform-flow slotted holes are uniformly distributed in the ring-shaped baseplate; a mounting flange connected with the reaction chamber is arranged at the top of the main body and a sealing groove is formed between the mounting flange and the reaction chamber. The reaction chamber has the advantages of clean cavity, little pollution, good atmosphere and uniformity in the chamber and long service life.

Description

technical field [0001] The invention relates to the technical field of plasma etching, in particular to a reaction chamber of a dry plasma etching machine. Background technique [0002] Etching is an important process in the manufacturing process of semiconductors, microelectronics and LEDs. Etching is the process of selectively removing unnecessary materials from the surface of silicon wafers or sapphire substrates by chemical or physical methods. With the improvement of the integration level of semiconductor devices, the line width of semiconductor devices is getting smaller and smaller, the control of critical dimensions is becoming more and more important, and the requirements for etching processes are also getting higher and higher. In terms of process, etching can be divided into wet etching and dry etching. Dry etching is plasma etching. Usually, an etching gas is introduced into a plasma processing device, and the etching gas is ionized to form a plasma, and the waf...

AI Technical Summary

Problems solved by technology

[0006] In order to overcome the shortcomings of existing plasma etching equipment such as chamber pollution and damage, poor atmosphere uniformity in the reaction chamber, and short service life, the present invention provides a dry-process plasma etching device with a clean chamber, less pollution, and a long service life. The reaction chamber of the etching machine

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