Dry etching technology of monocrystalline silicon solar cells

Abstract

The invention relates to a dry etching technology of monocrystalline silicon solar cells. The dry etching technology is characterized by comprising the following steps: (1) a fixture equipped with 200-1000 silicon wafers is put into a plasma etcher cavity; (2) vacuum-pumping is carried out; (3) reactant gases CF4 and O2 are blown in and flow of CF4 and flow of O2 are respectively controlled within 190-210 sccm and within 25-35sccm until working pressure reaches 200-220psig; (4) glow discharge is carried out and the gases react; (5) vacuum-pumping is carried out again and normal pressure is recovered; and (6) the door of the cavity is opened, the fixture is taken out, and the wafers are removed. The invention provides a dry etching technology of monocrystalline silicon solar cells by a physical metallurgy method. The technology is suitable for 125*125mm of monocrystalline silicon solar cells by a physical metallurgy method. By the adoption of the technology, short circuit ring on the edge of silicon wafers after diffusion can be removed; etched silicon wafers meet technological requirements; and over-etching or under-etching is completely eradicated.

Description

technical field [0001] The invention relates to a dry etching process of a monocrystalline silicon solar cell. Background technique [0002] Solar energy is an inexhaustible renewable energy source for human beings. It is also clean energy and does not produce any environmental pollution. In recent years, solar energy has been widely used by humans, especially in the field of photovoltaic power generation, which has developed rapidly. Solar cells are used to convert solar energy into electrical energy. The production and manufacturing process of solar cells is relatively complicated. During the phosphorus diffusion process, phosphorus will inevitably be diffused on all surfaces of silicon wafers including the edges. The photogenerated electrons collected on the front side of the PN junction will flow to the back side of the PN junction along the area diffused with phosphorus along the edge, thus causing a short circuit. The usual method is to remove the short circuit form...

AI Technical Summary

Problems solved by technology

[0003] However, the existing plasma etching process cannot meet the etching requirements of 125*125mm physical metallurgical monocrystalline silicon solar cells, and the phenomenon of over-etching or impermeability will occur, resulting in whitening around the silicon wafer after coating. Screen printing, After sintering, the leakage current of the battery sheet is large and the phenomenon of non-conduction seriously affects the performance of the battery sheet

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