Plasma etcher

Abstract

A plasma etcher is provided, which includes: a chamber; top and bottom plasma electrodes provided top and bottom positions of the chamber; a gas injection pipe connected to the chamber; a plurality of diffusion plates provided between the top plasma electrode and the gate injection pipe; and a power generator supplying a plasma voltage to the top and bottom electrodes, wherein the top plasma electrode has a plurality of primary injection holes and the diffusion plates have a plurality of secondary injection holes.

Description

technical field [0001] The present invention relates to a plasma etching machine, in particular to a plasma etching machine used in the manufacturing process of semiconductor elements or liquid crystal displays. Background technique [0002] In general, the plasma etching process is performed by injecting gas into the box through a gas injection pipe connected to the upper part of the plasma etching box. At this time, since a plurality of injection holes are formed in the upper electrode provided across the inside of the case, the gas supplied to the upper electrode by the gas injection pipe is sprayed onto the entire surface of the glass substrate inside the case through the injection holes. [0003] However, as the size of the glass substrate increases, the possibility of uneven injection of the gas injected into the interior of the case through the gas injection pipe also increases. [0004] In other words, when the gas flowing in from the gas injection pipe flows into t...

AI Technical Summary

Problems solved by technology

Therefore, when there is a quality difference between the gases that make up the mixed gas, the velocity becomes uneven in the horizontal direction of diffusion, resulting in uneven distribution of the gas flowing into the box.

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