Focus ring, plasma etching apparatus and plasma etching method

Abstract

PROBLEM TO BE SOLVED: To suppress the adhesion of a reaction product at a semiconductor wafer periphery for forming trenches by etching e.g., a silicon layer with plasma to suppress the reduction of an etching rate. SOLUTION: An inner region on the surface of a focus ring is finish-worked at mean surface roughness Ra in e.g., 0.1 or less as fine as suppressing the adhesion of a reaction product in an etching process, and an outer region is finish-worked at mean surface roughness Ra e.g., 3.2 or less. The boundary between the inner and outer regions is taken as a portion where the level of consumption changes when the focus ring is incorporated in a plasma etcher to etch a substrate with plasma. COPYRIGHT: (C)2006,JPO&NCIPI

Description

technical field [0001] The present invention relates to a focus ring, a plasma etching apparatus, and a plasma etching method used in a plasma etching apparatus for etching a substrate such as a semiconductor wafer with plasma, for example, forming a groove on the surface of the substrate. Background technique [0002] It is commercially important to incorporate DRAM into logic devices of digital home appliances such as digital TV, DVD recorder, and digital camera, and has become a major form in the semiconductor industry. In the case of logic devices, 0.18μm technology has been used to integrate devices with a scale of 10 million gates on one LSI, and to mount various LSIs including the CPU on a single silicon wafer. System on chip (SOC) . The mixed load technology required to realize SOC is a technology that maximizes the performance of each LST and realizes it with the minimum number of process steps. [0003] The memory cells of the DRAM are arranged at intersections o...

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Problems solved by technology

This patent document 1 describes that HBr (hydrogen bromide) gas is used as the main component, and SF is added thereto. 6 (sulfur hexafluoride) gas, SiF 4 (Silicon tetrafluoride) gas, and then add He (helium) gas, O 2 (Oxygen) gas, forming a mixed gas, using the mixed gas as a processing gas, and using the silicon oxide film as a mask to perform trench processing on silicon, but the above-mentioned problems cannot be solved

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