Preparation method of nanoporous structures on surfaces of silicon wafers

A technology of nanoporous structure and silicon wafer surface, applied in the process of producing decorative surface effects, microstructure technology, microstructure devices, etc.

Inactive Publication Date: 2015-04-22
INST OF HIGH ENERGY PHYSICS CHINESE ACADEMY OF SCI
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is no precedent for the application of cesium chloride nano-island self-assembly technology on the surface of silicon to prepare nano-silicon pores with a size of several hundred nanometers and a depth greater than 1 micron. This patent is aimed at the application of cesium chloride nano-island self-assembly technology. A method for nanoporous structure of silicon surfaces

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of nanoporous structures on surfaces of silicon wafers
  • Preparation method of nanoporous structures on surfaces of silicon wafers
  • Preparation method of nanoporous structures on surfaces of silicon wafers

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0029] based on figure 1 The flow chart of the method for preparing the nanopore structure on the surface of a silicon wafer as shown, Figure 2 to Figure 7 It is a process flow chart for preparing a nanopore structure on the surface of a silicon wafer according to an embodiment of the present invention. In this embodiment, the cesium chloride nano-island self-assembly technology and micromachining stripping and plasma deep etching technology are used to complete the silicon surface nanopore structure. The preparation of pore structure, this method comprises the following steps:

[0030] Such as figure 2 As shown, clean the silicon wafer and put it into the vacuum coating chamber to evaporate the cesium chloride thin film with a film thickness of 200-7000 angstroms. The silicon wafer is selected from the silicon wafer used in the semiconductor industry, with a thickness of 0.2mm-0.5mm, P-type, a resistivity of 1Ω·cm-10Ω·cm, and a polished or rough surface.

[0031] Such as...

Embodiment

[0038] The following is a process flow diagram for preparing a nanopore structure on the surface of a silicon wafer according to an embodiment of the present invention. The method includes the following steps:

[0039] Step 1: Evaporate a cesium chloride film on a silicon wafer by thermal evaporation, the film thickness is 300 nanometers, and the thickness is measured and controlled by a quartz crystal thickness gauge.

[0040] Step 2: Put the silicon wafer coated with a cesium chloride film into a ventilated chamber with a humidity of 50%, the humidity is controlled by the flow of humid gas flowing into the chamber, develop for 1 hour under this humidity condition, and make the cesium chloride The thin film aggregates into a nano-island structure, and a cesium chloride nano-island structure is formed on the surface of the silicon wafer. The cesium chloride nano-islands have an average diameter of 600 nm.

[0041] Step 3: Put the silicon wafer with cesium chloride nano-island...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
electrical resistivityaaaaaaaaaa
diameteraaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation method of nanoporous structures on surfaces of silicon wafers. The method comprises the following steps: preparing cesium chloride island structures on the surfaces of the silicon wafers; plating aluminum metal films on the surfaces of the silicon wafers with the cesium chloride island structures in a vacuum manner, putting the silicon wafers into deionized water to ultrasonically peel, removing the cesium chloride island structures and the aluminum metal films on the silicon wafers to obtain porous aluminum films; deeply etching the surfaces of the silicon wafers in an etching cavity of a plasma etcher by taking the porous aluminum films as masks; and removing the porous aluminum films on the surfaces of the silicon wafers to obtain the nanoporous structures on the surfaces of the silicon wafers. The nanoporous structures on the surfaces of the silicon wafers prepared by the method are distributed on the surfaces of the silicon wafers in unordered positions; the nanoporous structures are different in sizes and similar in depth, and has Gaussian distribution of diameters and unsmooth side walls.

Description

technical field [0001] The invention belongs to the micro- and nano-semiconductor micro-processing technology, in particular to a method for preparing a nano-pore structure on the surface of a silicon wafer. Background technique [0002] In recent years, nanostructures have aroused great interest of researchers in the fields of nanomaterials and micro-nano processing because of their unique electrical, optical, catalytic and biological properties. The nanoarray structure has not only received extensive attention in the field of scientific research, but also has been applied in the fields of optoelectronic devices, magnetic recording, sensors, and bioinformatics. In particular, silicon is an important microelectronic material. In order to realize the application and promotion of silicon nanoelectronic devices, it is necessary to develop a method compatible with silicon technology to prepare silicon nanoarray structures, which is one of the research hotspots in the field of na...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00
Inventor 刘静伊福廷张天冲王波张新帅孙钢杰
Owner INST OF HIGH ENERGY PHYSICS CHINESE ACADEMY OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap