135results about How to "Unified operation" patented technology

An electric arc welder for performing a pulse welding process by a current between an advancing electrode and workpiece where the welder comprises a short detecting circuit for creating a short signal upon occurrence of a short circuit between the advancing electrode and the workpiece and a boost circuit to create a plasma boost pulse after the short circuit is cleared during the time period when the welder is not outputting the peak pulse current.

Disclosed herein is a pixel circuit that includes a correcting section configured to correct the input voltage sampled in the pixel capacitance in order to cancel out the dependency of the output current on the carrier mobility. In the pixel circuit, the correcting section operates depending on the control signal supplied from the scanning line to extract the output current from the drive transistor and introduce the extracted output current into a capacitance of the light-emitting device and the pixel capacitance, thereby correcting the input voltage. The pixel circuit further includes an additional capacitance added to the capacitance of the light-emitting device. In the pixel circuit, a portion of the output current extracted from the drive transistor flows into the additional capacitance to give a time margin to operation of the correcting section.

A memory cell includes a memory cell layer with a first dielectric layer over a bottom electrode layer, a second dielectric layer over the first dielectric layer, and a top electrode over the second dielectric layer. The dielectric layers define a via having a first part bounded by the first electrode layer and the bottom electrode and a second part bounded by the second dielectric layer and the top electrode. A memory element is within the via and is in electrical contact with the top and bottom electrodes. The first and second parts of the via may comprise a constricted, energy-concentrating region and an enlarged region respectively. The constricted region may have a width smaller than the minimum feature size of the process used to form the enlarged region of the via. A method for manufacturing a memory cell is also disclosed.

A method and a system for applying a road surface using a mixing plant for producing laying material, a road finishing machine processing the laying material to a road surface, and a supply chain transporting the laying material from the mixing plant to the road finishing machine. Request commands are transmitted from the road finishing machine to the mixing plant and / or to the supply chain, and, depending on these request commands, the production rate of the laying material in the mixing plant, the temperature of the laying material produced in the mixing plant, and / or the mass flow of laying material supplied to the road finishing machine per time unit by means of the supply chain are adjusted.

A movable belt conveyor system for a leach pad for use for sulfidic copper ore, where favorable conditions are to be generated for leaching out the copper by a slight compaction of the ore piled up into a dump for the microbiological leaching technology. The movable belt conveyor system of a length of up to several km is composed of a plurality of smaller belt segments, comprising a tail segment (70), standard segments (711-n) and a head segment (72), as well as a traveling tripper (8). To prevent the loading by these individual components from being excessively compacted by the weight of the device during multiple travel over the dump during the moving process, the belt drives with the driving drum are accommodated in the tail element (70), which is supported on the soil next to the leach pad. In addition, the traveling tripper (8) is designed as an independent unit with the belt drums, additional belt drives and the belt-tensioning means, which unit is autarchically displaceable on a caterpillar-type moving gear (85) of its own. Due to the moving of the belt on the caterpillar-type moving gears of the standard segments (711-n), on the head segment (72) and on the traveling tripper (8) as well as due to the absorption of the weight of the tail segment (70) by the transfer carriage (6), the surface pressure acting locally on the dump is reduced and the compaction of the ore on the dump due to being traveled over by the belt conveyor system remains low. Traveling over with a moving device, which frequently happens with the use of a moving caterpillar, is eliminated.

A semiconductor device includes a vertical IGBT and a vertical free-wheeling diode in a semiconductor substrate. A plurality of base regions is disposed at a first-surface side portion of the semiconductor substrate, and a plurality of collector regions and a plurality of cathode regions are alternately disposed in a second-surface side portion of the semiconductor substrate. The base regions include a plurality of regions where channels are provided when the vertical IGBT is in an operating state. The first-side portion of the semiconductor substrate include a plurality of IGBT regions each located between adjacent two of the channels, including one of the base regions electrically coupled with an emitter electrode, and being opposed to one of the cathode regions. The IGBT regions include a plurality of narrow regions and a plurality of wide regions.

Memory cells are described along with methods for manufacturing. A memory cell described herein includes a bottom electrode, a top electrode overlying the bottom electrode, a via having a sidewall extending from a bottom electrode to a top electrode, and a memory element electrically coupling the bottom electrode to the top electrode. The memory element has an outer surface contacting a dielectric sidewall spacer that is on the sidewall of the via, and comprises a stem portion on the bottom electrode and a cup portion on the stem portion. A fill material is within an interior defined by an inner surface of the cup portion of the memory element.

A nonvolatile memory device and a method for its fabrication may ensure uniform operating characteristics of ReRAM. The ReRam may include a laminated resistance layer that determines phase of ReRAM on an upper edge of a lower electrode for obtaining a stable threshold drive voltage level.

A control routine for groups of remotely controlled, variable-position, position-aware, transceiver-equipped actuators manages data discrepancies by issuing a first set of generic actuation commands to start and stop the actuators, then polling the actuators to report their achieved positions. The routine then applies a rule to determine a preferred position value from among the reports and issues a second set of position-specific actuation commands to all of the actuators. The routine can further poll the actuators to confirm the extent to which the commands have been realized, and can retain and apply compensation factors for performance deviations in the individual actuators. The routine can further manage multiple groups of actuators, dissimilar activators within groups, assignment of an actuator to more than one group, and application of variable control factors as inputs modifying the rule applied by the routine for determining the commands to be issued.