Inductive coupling plasma etching machine platform and electrode arrangement thereof

Abstract

The invention is an induction coupled plasma etching machine platform and its electrode construction, mainly composed of a reaction chamber, an upper electrode and a lower electrode. Wherein, the upper one is set in the reaction chamber and composed of a coil, a first dielectric layer, a second dielectric layer and a heater, the first dielectric layer on the coil, and the second dielectric layer on the first dielectric. The heater is set between the first and second dielectric layers. The lower one is set in the reaction chamber and composed of a conductor electrode and a third dielectric layer set on the conductor electrode. It uses the heater to raise the temperature in the reaction chamber to make easily volatile resultant of etching.

Description

technical field [0001] The present invention relates to an inductively coupled plasma etching machine and its electrode structure, and in particular to an inductively coupled plasma etching machine and its electrode structure which can make etching products easy to volatilize without deposition and adhesion. Background technique [0002] Plasma is the basis for dry etching to generate ion bombardment for anisotropic etching. General dry etching can be roughly divided into sputtering etch, plasma etch and reactive ion etching ( Reactive Ion Etch, RIE) three kinds. Among them, sputter etching mainly utilizes the ions generated by plasma, and etches the film through the bombardment phenomenon (bombardment) of the ion to the film. The anisotropy of this etching method is good, but the selectivity of etching is poor; plasma Etching mainly uses plasma to dissociate the molecules of the reactive gas into ions that are reactive with the film material, and through the chemical react...

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Problems solved by technology

[0008] Since the temperature of the surface of the substrate 180 is 60-70°C as mentioned above, the etching product will not be volatile due to the low temperature of the surface of the substrate 180 during the etching process, and finally the etching product will be deposited and attached to the reaction In room 110, as a result, the machine must be disassembled frequently for cleaning, which will increase the frequency of machine maintenance (preventive maintenance) and relatively reduce the throughput of the machine

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