Inductive coupling plasma etching machine platform and electrode arrangement thereof

A technology of plasma etching and inductive coupling, which is applied in the direction of plasma, circuits, electrical components, etc. It can solve the problems of non-volatile etching products, increased machine maintenance, and reduced machine capacity.

Inactive Publication Date: 2004-06-16
AU OPTRONICS CORP
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  • Abstract
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  • Claims
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Problems solved by technology

[0008] Since the temperature of the surface of the substrate 180 is 60-70°C as mentioned above, the etching product will not be volatile due to the low temperature of the surface of the substrate 180 during the etching process, and finally the etching product wi

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  • Inductive coupling plasma etching machine platform and electrode arrangement thereof
  • Inductive coupling plasma etching machine platform and electrode arrangement thereof
  • Inductive coupling plasma etching machine platform and electrode arrangement thereof

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Embodiment Construction

[0037] Figure 2A It is a schematic diagram of an inductively coupled plasma etching machine according to a preferred embodiment of the present invention. Please refer to Figure 2A , the inductively coupled plasma etching machine 200 is composed of a reaction chamber 210, an upper electrode 220, a lower electrode 230, an upper temperature control device 240, a lower temperature control system 250, a side wall temperature control system 260 and a gas supply device 270 constituted. Wherein, the reaction chamber 210 is composed of, for example, a cavity 212 and an upper cover 214 , and the upper cover 214 and the cavity 212 are connected to each other, and the upper cover 214 can be lifted or closed relative to the cavity 212 . The upper electrode 220 is disposed in the reaction chamber 210, such as disposed on the inner surface of the upper cover 214, and the lower electrode 230 is disposed in the reaction chamber 210, such as disposed on the inner surface of the cavity 212, ...

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Abstract

The invention is an induction coupled plasma etching machine platform and its electrode construction, mainly composed of a reaction chamber, an upper electrode and a lower electrode. Wherein, the upper one is set in the reaction chamber and composed of a coil, a first dielectric layer, a second dielectric layer and a heater, the first dielectric layer on the coil, and the second dielectric layer on the first dielectric. The heater is set between the first and second dielectric layers. The lower one is set in the reaction chamber and composed of a conductor electrode and a third dielectric layer set on the conductor electrode. It uses the heater to raise the temperature in the reaction chamber to make easily volatile resultant of etching.

Description

technical field [0001] The present invention relates to an inductively coupled plasma etching machine and its electrode structure, and in particular to an inductively coupled plasma etching machine and its electrode structure which can make etching products easy to volatilize without deposition and adhesion. Background technique [0002] Plasma is the basis for dry etching to generate ion bombardment for anisotropic etching. General dry etching can be roughly divided into sputtering etch, plasma etch and reactive ion etching ( Reactive Ion Etch, RIE) three kinds. Among them, sputter etching mainly utilizes the ions generated by plasma, and etches the film through the bombardment phenomenon (bombardment) of the ion to the film. The anisotropy of this etching method is good, but the selectivity of etching is poor; plasma Etching mainly uses plasma to dissociate the molecules of the reactive gas into ions that are reactive with the film material, and through the chemical react...

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Application Information

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IPC IPC(8): C23F4/00H01L21/3065H05H1/34
Inventor 李孝忠林瑞烽侯建州戴嘉宏赖宏裕
Owner AU OPTRONICS CORP
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