Electrode of plasma etcher for carrying out dry etching on hard inorganic material substrate

Abstract

The invention relates to an electrode of a plasma etcher for carrying out dry etching on a hard inorganic material substrate, which comprises a guide rail device for being fixedly connected with an etching cavity. A lifter capable of taking the lifting and descending motion in the guide rail device is arranged in the guide rail device. The lifter is fixedly connected with a lower electrode tray. The lower electrode tray is arranged above the guide rail device. The lower electrode tray comprises a top disk and a bottom disk which are fixedly connected. The lower part of the top disk is provided with a cylindrical groove. A gas homogenizing disk is fixedly arranged in the cylindrical groove. Gaps are reserved between the gas homogenizing disk and the top disk as well as between the gas homogenizing disk and the bottom disk. The center of the gas homogenizing disk is provided with a frist through hole for ensuring gas to be communicated to the top disk. The first through hole is communicated with a cooling gas inlet. The center of the bottom of the bottom disk is provided with a second through hole. The second through hole is isolated from the first through hole. The bottom end of the second through hole is connected with a sealed tube. The second through hole is communicated with a cooling gas outlet. The electrode has the beneficial effect that the cooling effect is good so that the etching effect is good.

Description

technical field [0001] The invention relates to an electrode of a plasma etching machine for dry etching a hard inorganic material substrate. Background technique [0002] Etching is a very important process step in semiconductor manufacturing process, microelectronic IC manufacturing process and micro-nano manufacturing process, and is a main process of patterning (pattern) processing associated with lithography. The so-called etching, in fact, is understood in a narrow sense as photolithography etching. First, the photoresist is subjected to photolithography exposure treatment by photolithography, and then the part to be removed is etched by other means. With the development of micro-manufacturing technology, in a broad sense, etching has become a general term for stripping and removing materials through solutions, reactive ions or other mechanical methods, and has become a common name for micro-machining. The simplest and most commonly used classifications of etching are...

AI Technical Summary

Problems solved by technology

[0010] The invention aims to solve the problem that the lower electrode of the existing ICP etching machine used for etching inorganic material substrates cannot be mass-produced and has a complex structure, and provides a dry etching hard electrode with simple structure and batch etching. Electrode of plasma etching machine for inorganic material substrate

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